Infineon Technologies IMBG65R072M1HXTMA1

Overview

IMBG65R072M1HXTMA1 from Infineon is a 650 V, 72 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 69 A peak drain current and 140 W power dissipation at T_c = 25 °C. It delivers low switching losses via dedicated driver source pin, supports 175 °C junction operation, and is validated per JEDEC for industrial applications including solar inverters and EV charging.

For engineers reviewing the IMBG65R072M1HXTMA1 datasheet, IMBG65R072M1HXTMA1 pinout, IMBG65R072M1HXTMA1 application, or IMBG65R072M1HXTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, commutation-robust body diode Q_rr, gate oxide reliability at V_GS = 20 V, and Kelvin-source-enabled reduction of Miller-induced turn-off delay.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: 650 V blocking voltage with 72 mΩ typical R_DS(on) at 25 °C and 94 mΩ max at 175 °C, plus 22 nC total gate charge at 400 V. Its PG-TO263-7 package integrates separate driver and power source terminals to decouple gate loop inductance from high-current paths.

The device features a fast, low-Q_rr internal body diode (Q_rr = 60 nC), 200 V/ns dv/dt ruggedness, and 114 mJ single-pulse avalanche energy. Gate threshold voltage is tightly distributed (3.5–5.7 V), and it operates reliably within V_GS = –2 to +20 V, with recommended turn-on/turn-off voltages of +18 V and 0 V respectively.

Key Specifications

Pinout & Package

Package: PG-TO263-7 (surface-mount, 7-pin variant with isolated drain tab and Kelvin source). The package features a large copper drain tab for thermal conduction and two distinct source connections: Pin 3–7 serve as power source (low-inductance return path for load current), while Pin 2 is the dedicated driver source (low-noise reference for gate control).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0075120K and STW65N65DM6AG, IMBG65R072M1HXTMA1 uniquely combines 650 V rating, Kelvin-source low-loss switching, and JEDEC-qualified 175 °C operation-making it optimal for high-power density, high-reliability applications where commutation robustness and thermal headroom are critical.

Availability

IMBG65R072M1HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and telecom/server SMPS requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp.

Supply support for IMBG65R072M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ M1 generation of trench-based SiC MOSFETs, designed specifically for high-efficiency, high-power-density industrial power conversion systems operating above 1 kW with demanding thermal and reliability requirements.

FAQ

What is the purpose of the separate driver source (Pin 2) and power source (Pins 3–7)?

Pin 2 is the Kelvin driver source, providing a low-inductance reference for the gate driver to eliminate source inductance effects on switching timing and prevent false turn-on due to Miller coupling. Pins 3–7 collectively form the high-current power source return path. They must not be interchanged - doing so causes gate control instability and potential device failure.

Can IMBG65R072M1HXTMA1 replace standard silicon MOSFETs in existing designs?

Yes, but layout and gate drive must be revised: the Kelvin source requires separate routing for gate driver return, and gate resistor values may need reduction due to lower Q_G (22 nC vs. ~60 nC for comparable Si devices). Also, maximum V_GS must stay ≤20 V - unlike many Si MOSFETs rated for 30 V - to ensure gate oxide lifetime.

What is the significance of the 114 mJ single-pulse avalanche energy rating?

This value reflects the device's ability to absorb transient overvoltage energy without failure during unclamped inductive switching events. It is measured at I_D = 4.3 A and V_DD = 50 V, and confirms robustness in hard-switched topologies like PFC or flyback converters where voltage spikes may exceed nominal V_DS.

Is IMBG65R072M1HXTMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (86–112 pF), fast body diode (t_fr = 18.7 ns, Q_rr = 60 nC), and tight V_GS(th) distribution (3.5–5.7 V) support reliable ZVS turn-on in LLC and phase-shifted full-bridge converters. However, gate drive must maintain clean, low-inductance loops to exploit these characteristics fully.