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Infineon Technologies IMBG65R107M1HXTMA1

Name: IMBG65R107M1HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R107M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R107M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R107M1HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET PG-TO263-

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Product details

Overview

IMBG65R107M1HXTMA1 from Infineon is a 650 V, 107 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 47 A peak drain current and optimized for high-efficiency hard-switching topologies including telecom SMPS, solar inverters, and EV charging infrastructure.

For engineers reviewing the IMBG65R107M1HXTMA1 datasheet, IMBG65R107M1HXTMA1 pinout, IMBG65R107M1HXTMA1 application, or IMBG65R107M1HXTMA1 equivalent, key selection criteria include its 107 mΩ R_DS(on) at 25 °C, 15 nC total gate charge, 35 nC output charge at 400 V, 175 °C max junction temperature, and Kelvin source architecture enabling up to 4× lower switching losses.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to deliver wide-bandgap advantages: low conduction loss with minimal temperature dependency, fast and robust body diode (Q_fr = 47 nC, t_fr = 17.7 ns), and high dv/dt immunity (200 V/ns). Its gate oxide is qualified for industrial lifetime reliability at T_j,max = 175 °C.

The PG-TO263-7 package integrates a dedicated Kelvin source terminal (Pin 2) electrically isolated from the power source (Pins 3–7), enabling precise gate drive referencing and eliminating source inductance impact on switching dynamics-critical for minimizing EMI and optimizing hard-commutation robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for use in 400–600 V DC bus systems like PV string inverters and 3-phase rectifiers.
R_DS(on), typ	107 mΩ at V_GS = 18 V, I_D = 8.9 A, T_j = 25 °C - Enables low conduction loss in high-current, high-frequency converters.
Q_G, tot	15 nC at V_DS = 400 V - Low gate charge supports efficient 100–500 kHz switching with standard gate drivers.
Q_oss	35 nC at V_DS = 400 V - Energy-related output charge determines turn-off loss and snubber sizing in hard-switched designs.
t_fr	17.7 ns - Fast forward recovery time of integrated body diode reduces commutation loss and ringing in ZVS/ZCS circuits.
T_j,max	175 °C - Enables operation in compact, high-power-density thermal environments without derating penalties.
R_th(j–c)	1.36 °C/W - Low junction-to-case thermal resistance allows direct heatsink mounting for high-power dissipation (up to 110 W).

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount, thermally enhanced with isolated Kelvin source terminal and large copper drain tab for low-inductance, high-current PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main current path (high-side or low-side switch node)	Exposed copper pad soldered to PCB copper pour for thermal and electrical conduction; carries full load current.
Gate (Pin 1)	Control input for channel modulation	Standard gate terminal; driven by external driver with recommended V_GS = 0 V / +18 V swing.
Power Source (Pins 3–7)	Return path for main load current	Parallel-connected source pins minimize inductance and resistive drop under high pulsed current (I_D,peak = 47 A).
Kelvin Source (Pin 2)	Reference node for gate drive loop	Isolated low-current source connection for gate driver return-eliminates source inductance from gate control loop, enabling stable high-speed switching.

Key Features

Feature	Design Value
Kelvin source architecture	Separate gate-return path reduces effective gate loop inductance, enabling reliable >200 V/ns switching without oscillation.
Commutation-robust body diode	Q_fr = 47 nC and t_fr = 17.7 ns support zero-voltage switching in totem-pole PFC and bidirectional DC–DC converters.
High-temperature gate oxide	Qualified per JEDEC for industrial applications at T_j = 175 °C, ensuring long-term stability under sustained thermal stress.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~20% from 25 °C to 175 °C, enabling predictable conduction loss across operating range.
High avalanche energy rating	E_AS = 76 mJ (single pulse) supports unclamped inductive switching in motor drives and UPS hold-up stages.

Applications

Telecom & Server SMPS

Solar PV String Inverters

Use Scenario: High-frequency LLC resonant converter in 3 kW server PSU with 48 V output and 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side SiC MOSFET switching at 300–500 kHz with synchronous rectification control.

Use Value: 107 mΩ R_DS(on) and 15 nC Q_G reduce conduction and switching losses, enabling >97% efficiency and 100 W/in³ power density.

Use Scenario: Two-level string inverter stage converting 800–1000 V DC from PV arrays into 230 V AC grid interface.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge with field-oriented control and 16 kHz PWM.

Use Value: Kelvin source minimizes shoot-through risk during fast transitions; 175 °C rating enables passive cooling in outdoor enclosures.

EV DC Fast Charging Modules

Energy Storage System Bi-directional Converters

Use Scenario: Isolated dual-active-bridge (DAB) stage in 150 kW charging cabinet stepping 400–1000 V DC between grid and EV battery.

IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) bridge arm switch with soft-switching control and adaptive dead-time.

Use Value: Low Q_oss (35 nC) and fast t_fr (17.7 ns) enable high-efficiency ZVS over full load range, reducing heatsink mass by 35%.

Use Scenario: 500 kW bi-directional DC–DC converter linking 1500 V battery stack to 800 V traction bus in grid-scale storage systems.

IC Role / Device Role / Timing Role: Hard-switched buck-boost switch operating at 25–50 kHz with active avalanche clamping.

Use Value: 76 mJ single-pulse avalanche energy ensures safe operation during fault transients without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0120100K	R_DS(on) = 120 mΩ (higher), Q_G = 13.5 nC (lower), TO-247-4L package, no Kelvin source	Lacks Kelvin source; requires careful gate loop layout to avoid instability above 150 kHz	Preferred where cost sensitivity outweighs switching loss optimization and board space permits larger TO-247 footprint.
STW65N65DM6AG	R_DS(on) = 110 mΩ, Q_G = 22 nC, 650 V SiC planar MOSFET in TO-247-4L, no Kelvin source	Higher Q_G increases driver loss; slower t_fr (25 ns) limits ZVS performance in high-frequency DAB	Suitable for 65–100 kHz phase-shifted full-bridge where gate drive simplicity is prioritized over peak efficiency.

Compared with C3M0120100K and STW65N65DM6AG, IMBG65R107M1HXTMA1 delivers superior high-frequency efficiency via Kelvin source and lowest Q_oss, but requires strict adherence to Pin 2 (Kelvin source) routing rules-making it optimal for compact, high-power-density designs where layout control is assured.

Availability

IMBG65R107M1HXTMA1 is available at Aetrix Electronics and suitable for telecom SMPS, solar PV inverters, and EV charging infrastructure requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IMBG65R107M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in industrial, renewable energy, and e-mobility applications-designed specifically for hard-switched and soft-switched topologies demanding low loss, high thermal resilience, and robust body diode behavior.

FAQ

What is the purpose of the Kelvin source (Pin 2) on the IMBG65R107M1HXTMA1?

The Kelvin source (Pin 2) provides a dedicated low-current return path for the gate driver, isolating the gate control loop from high di/dt power source currents. This eliminates source inductance-induced voltage spikes that cause false turn-on or oscillation, enabling stable high-speed switching up to 500 kHz without added gate resistors or ferrite beads.

Can the IMBG65R107M1HXTMA1 replace a silicon MOSFET in an existing 650 V design?

Yes-but gate drive must be re-optimized: use V_GS = 0 V / +18 V (not ±15 V), reduce gate resistor to match 15 nC Q_G, and route Kelvin source separately. Layout changes are required to isolate Pin 2 from power source traces. Thermal design benefits from lower R_DS(on) and higher T_j,max, allowing smaller heatsinks.

Why does the datasheet warn against exchanging source and Kelvin source pins?

Exchanging Pins 2 (Kelvin source) and 3–7 (power source) connects the gate driver return to the high-current source path, injecting di/dt-induced noise directly into the gate loop. This causes unpredictable turn-on/turn-off timing, increased switching loss, and potential device failure due to parasitic oscillation or shoot-through-violating the fundamental isolation principle of Kelvin sensing.

Is the IMBG65R107M1HXTMA1 suitable for unclamped inductive switching (UIS)?

Yes-the device is fully rated for UIS with E_AS = 76 mJ (single pulse) at I_D = 2.8 A and V_DD = 50 V. This capability supports protection during short-circuit events in motor drives and UPS hold-up stages without external avalanche clamping, provided layout minimizes stray inductance and junction temperature remains below 175 °C.

IMBG65R107M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSIC™ M1

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 141mOhm @ 8.9A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 496 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R107M1HXTMA1 FAQ

1.How can I place an order for IMBG65R107M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R107M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R107M1HXTMA1 reliable?

The price and inventory of IMBG65R107M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R107M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R107M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R107M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R107M1HXTMA1?

IMBG65R107M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R107M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R107M1HXTMA1?

For technical support, including IMBG65R107M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R107M1HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R107M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R107M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R107M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R107M1HXTMA1?

All IMBG65R107M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R107M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R107M1HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R107M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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