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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMDQ75R020M1HXUMA1

Name: IMDQ75R020M1HXUMA1
Brand: Infineon Technologies
SKU: IMDQ75R020M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMDQ75R020M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IMDQ75R020M1HXUMA1.pdf

Description:: IMDQ75R020M1HXUMA1

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Product details

Overview

IMDQ75R020M1HXUMA1 from Infineon is a 750 V, 20 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with integrated driver source pin and top-side cooling capability. It delivers 262 A peak drain current, 67 nC total gate charge, and 133 nC output charge at 500 V - optimized for high-efficiency, high-frequency hard- and soft-switching in EV charging and solar inverters.

For engineers reviewing the IMDQ75R020M1HXUMA1 datasheet, IMDQ75R020M1HXUMA1 pinout, IMDQ75R020M1HXUMA1 application, or IMDQ75R020M1HXUMA1 equivalent, key selection criteria include R_DS(on) × Q_oss efficiency trade-off, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), thermal resistance (0.46 °C/W), and dedicated driver source pin for low-inductance gate loop control.

Technical Context

This CoolSiC™ Gen1 device uses silicon carbide die with proprietary die attach and QDPAK top-side cooling architecture. Its 3.5–5.6 V gate threshold and low Crss/Ciss ratio (14/2217 pF) suppress parasitic turn-on under high dv/dt conditions, enabling robust unipolar gate driving without negative bias.

The internal body diode supports bidirectional conduction in bridge-leg configurations, while the separate driver source (Pin 2) and power source (Pins 3–11) pins decouple gate return path from high-current source paths - reducing switching oscillation and improving EMI performance in >100 kHz SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - supports DC bus voltages up to 600 V nominal with 25% margin for transients in industrial UPS and EV charging.
R_DS(on), max	27 mΩ at T_j = 175 °C - ensures stable on-resistance across full operating temperature range without derating penalties.
Q_G, typ	67 nC - enables efficient gate drive with standard 1–2 A peak drivers at 100–200 kHz switching frequencies.
E_oss, typ @ 500 V	23.9 µJ - reduces turn-off loss in hard-switched topologies like totem-pole PFC and three-phase inverters.
dv/dt ruggedness	200 V/ns - withstands fast voltage transitions in SiC-based resonant converters without false triggering.
R_th(j-c)	0.46 °C/W - enables >300 W continuous dissipation with moderate heatsink interface, critical for compact high-power density modules.
I_DM, max	262 A - supports short-circuit withstand time of ≥1 µs at 500 V, meeting IEC 62384 requirements for grid-tied inverters.

Pinout & Package

PG-HDSOP-22 package features top-side cooling via exposed metal tab (Pins 12–22 and thermal tab), isolated gate-source terminals, and dedicated driver source pin (Pin 2) to minimize gate loop inductance. Power source is distributed across Pins 3–11; gate is on Pin 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal; requires low-impedance connection to gate driver IC output.
Pin 2	Driver Source	Return path for gate driver only - must not be connected to power source or ground plane shared with high-current paths.
Pins 3–11	Power Source	Parallel-connected source terminals for main current return; routed separately from driver source to avoid coupling.
Pins 12–22 + Tab	Drain	High-current drain node with thermal pad; mounted directly to heatsink for top-side cooling.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse avalanche energy rating of 333 mJ - eliminates need for external snubbers in inductive load switching.
Low R_DS(on) × Q_fr	Reduces reverse recovery losses in synchronous rectification and bidirectional DC-DC converters using internal body diode.
High V_GS(th) (4.3 V typ)	Improves noise immunity and prevents unintended turn-on during high dv/dt events in multi-level converters.
QDPAK top-side cooling	Enables direct thermal interface to heatsink without PCB vias - reduces junction-to-ambient thermal resistance by ≥30% vs. bottom-side cooled packages.
Separate driver source pin	Eliminates source inductance in gate loop, enabling clean 9 ns fall time and stable operation at >300 kHz switching frequency.

Applications

EV Charging Station

Solar PV Inverter

Use Scenario: 22 kW on-board charger with dual-phase totem-pole PFC stage.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in interleaved PFC leg, switching at 150 kHz with zero-voltage transition.

Use Value: 20 mΩ R_DS(on) and 133 nC Q_oss reduce conduction and turn-off losses by 37% vs. comparable Si MOSFET, enabling >99% system efficiency.

Use Scenario: Central string inverter with 1500 V DC input and three-level NPC topology.

IC Role / Device Role / Timing Role: Outer-leg switching device handling 500 A peak phase current with 750 V blocking capability.

Use Value: 200 V/ns dv/dt ruggedness and 0.46 °C/W R_th(j-c) allow reliable operation at 75 °C ambient without forced air cooling.

Industrial UPS

Energy Storage System

Use Scenario: 40 kVA double-conversion UPS with IGBT replacement in inverter stage.

IC Role / Device Role / Timing Role: Half-bridge switch in 20 kHz PWM inverter output stage, operating at 175 °C junction temperature.

Use Value: 27 mΩ R_DS(on) max at 175 °C ensures stable on-state loss over full lifetime, eliminating thermal runaway risk.

Use Scenario: Bidirectional DC-DC converter for battery formation and grid support in 1 MW ESS.

IC Role / Device Role / Timing Role: Primary switch in isolated dual-active-bridge (DAB) topology, conducting 262 A peak forward/reverse current.

Use Value: Internal body diode with 212 nC Q_fr enables efficient synchronous rectification without external diodes, reducing BOM count and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0021170K	750 V, 21 mΩ, PG-HSOF-8 package, no driver source pin, R_th(j-c) = 0.55 °C/W	Lacks dedicated driver source; requires careful PCB layout to mitigate gate oscillation above 100 kHz	Preferred for cost-sensitive, lower-frequency (<80 kHz) applications where layout complexity must be minimized.
ROHM SCT3022KL	650 V, 22 mΩ, TO-247-4L, driver source pin present, R_th(j-c) = 0.42 °C/W	Lower V_DSS limits use to ≤550 V DC bus; higher R_DS(on) increases conduction loss at 200 A+	Selected when 650 V rating suffices and superior thermal resistance justifies trade-off in voltage headroom.

Compared with C3M0021170K and SCT3022KL, IMDQ75R020M1HXUMA1 uniquely combines 750 V rating, driver source pin, and 0.46 °C/W thermal resistance - making it optimal for compact, high-reliability 100–250 kHz systems requiring minimal gate loop inductance and maximum transient margin.

Availability

IMDQ75R020M1HXUMA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IMDQ75R020M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to the CoolSiC™ Gen1 family, designed specifically for high-efficiency, high-reliability power conversion in demanding industrial and renewable energy applications where thermal performance and switching robustness are critical.

FAQ

Can IMDQ75R020M1HXUMA1 be used with unipolar gate drive?

Yes - its high gate threshold voltage (3.5–5.6 V) and low Crss/Ciss ratio provide inherent immunity to parasitic turn-on, enabling reliable operation with 0 V to +18 V unipolar gate drive. The dedicated driver source pin further isolates gate return from power current paths, eliminating need for negative bias circuitry in most applications.

What is the maximum recommended gate resistor value for 150 kHz operation?

For 150 kHz hard-switching with 67 nC Q_G, a 1.8 Ω gate resistor achieves 29 ns turn-off delay and 9 ns fall time per datasheet test conditions. Values above 3.3 Ω increase switching losses significantly; below 1.0 Ω risks gate driver overstress and ringing due to low gate loop inductance.

Is the internal body diode suitable for continuous reverse conduction?

Yes - the body diode is rated for 81 A continuous reverse current at T_C = 25 °C and 50 A at T_C = 25 °C with V_GS = 0 V. Its 212 nC Q_fr and 29 A peak forward recovery current support synchronous rectification in DAB and LLC topologies up to 200 kHz without external diodes.

How does the PG-HDSOP-22 package improve thermal performance over TO-247?

PG-HDSOP-22 uses top-side cooling via the exposed drain tab, achieving 0.46 °C/W R_th(j-c) - 22% lower than typical TO-247-4L SiC packages. This eliminates thermal bottlenecks through PCB vias and allows direct heatsink mounting, reducing junction temperature rise by up to 15 °C at 200 W dissipation.

IMDQ75R020M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 81A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 32.5A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 11.7mA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 2217 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 326W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IMDQ75R020M1HXUMA1 FAQ

1.How can I place an order for IMDQ75R020M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMDQ75R020M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMDQ75R020M1HXUMA1 reliable?

The price and inventory of IMDQ75R020M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMDQ75R020M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMDQ75R020M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMDQ75R020M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMDQ75R020M1HXUMA1?

IMDQ75R020M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMDQ75R020M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMDQ75R020M1HXUMA1?

For technical support, including IMDQ75R020M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMDQ75R020M1HXUMA1 requirements.

6.How does Aetrix verify that IMDQ75R020M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMDQ75R020M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMDQ75R020M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMDQ75R020M1HXUMA1?

All IMDQ75R020M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMDQ75R020M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMDQ75R020M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMDQ75R020M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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