Infineon Technologies IMDQ75R027M1HXUMA1

Overview

IMDQ75R027M1HXUMA1 from Infineon is a 750 V, 27 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with integrated driver source pin and top-side cooling. It delivers 198 A peak drain current, 49 nC total gate charge, and 100 nC output charge at 500 V-enabling high-efficiency hard-switching in 10–20 kHz EV charging modules and solar inverters.

For engineers reviewing the IMDQ75R027M1HXUMA1 datasheet, IMDQ75R027M1HXUMA1 pinout, IMDQ75R027M1HXUMA1 application, or IMDQ75R027M1HXUMA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, dv/dt ruggedness (200 V/ns), thermal resistance (0.55 °C/W), and unipolar gate drive compatibility enabled by high V_GS(th) (4.3 V typ).

Technical Context

This CoolSiC™ G1 device uses proprietary die attach and QDPAK top-side cooling to achieve 0.55 °C/W junction-to-case thermal resistance. Its 10 pF Crss/Ciss ratio (10/1668) and 4.3 V typical gate threshold voltage suppress parasitic turn-on under high dv/dt conditions up to 200 V/ns.

The internal body diode supports bidirectional conduction with 105–164 nC forward recovery charge and 21–13 ns recovery time across 1–4 kA/µs di/dt. Gate drive design must respect strict separation of source (Pin 2) and driver source (Pins 3–11) terminals per Infineon's layout guidance.

Key Specifications

Pinout & Package

PG-HDSOP-22 package features exposed copper tab for top-side cooling and isolated source/driver-source terminals to minimize common-source inductance. Pin 1 is Gate, Pins 3–11 are Driver Source, Pin 2 is Power Source, and Pins 12–22 plus tab form the Drain connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0032090D and IXFH40N75X3, IMDQ75R027M1HXUMA1 delivers best-in-class R_DS(on) × Q_fr and top-side cooling for compact, high-power-density designs-making it optimal for space-constrained EV chargers and solar inverters requiring >98% efficiency.

Availability

IMDQ75R027M1HXUMA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for IMDQ75R027M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolSiC™ G1 family-designed specifically for high-efficiency, high-reliability 750 V power conversion in EV charging, solar, and industrial UPS applications using silicon carbide technology.

FAQ

What is the maximum allowable gate-source voltage for continuous operation?

The continuous gate-source voltage operating range is –2 V to +20 V per Table 4 of the datasheet. Exceeding this range may cause permanent degradation of R_DS(on) and V_GS(th) over lifetime. The absolute maximum transient rating is –10 V to +25 V for pulses ≤500 ns with ≤1% duty cycle.

Can the driver source (Pins 3–11) and power source (Pin 2) be connected together?

No-Infineon explicitly states these pins are not exchangeable and their connection causes malfunction. Driver source provides low-inductance return for gate drive current only, while power source carries main load current. Mixing them introduces oscillation and unreliable switching behavior.

What is the thermal resistance from junction to case, and how is it measured?

Junction-to-case thermal resistance is 0.55 °C/W, verified per JESD51-14 using transient dual-interface testing. This value applies to the exposed copper tab (Pins 12–22 + tab) under proper mounting pressure and thermal interface material, and is not subject to production test but confirmed by characterization.

Does this MOSFET require negative gate voltage for turn-off in hard-switching applications?

No-its 4.3 V typical V_GS(th) and low Crss/Ciss ratio allow robust unipolar gate driving (0 V/18 V). Negative bias is unnecessary unless operating in extreme EMI environments; the device is qualified for 0 V turn-off per its recommended operating range in Table 4.