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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMDQ75R040M1HXUMA1

Name: IMDQ75R040M1HXUMA1
Brand: Infineon Technologies
SKU: IMDQ75R040M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMDQ75R040M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IMDQ75R040M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMDQ75R040M1HXUMA1 from Infineon is a 750 V, 40 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with driver source pin and top-side cooling. It delivers 134 A peak drain current, 34 nC total gate charge, and 68 nC output charge at 500 V-enabling high-efficiency hard-switching in 1000 V bus systems for EV charging stations.

For engineers reviewing the IMDQ75R040M1HXUMA1 datasheet, IMDQ75R040M1HXUMA1 pinout, IMDQ75R040M1HXUMA1 application, or IMDQ75R040M1HXUMA1 equivalent, key selection criteria include R_DS(on) × Q_oss efficiency trade-off, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), internal body diode recovery (Q_fr = 75–115 nC), and thermal resistance (0.71 °C/W junction-to-case).

Technical Context

This CoolSiC™ Gen1 device uses wide-bandgap SiC to achieve low conduction loss (R_DS(on) = 40 mΩ typ at 25 °C) and superior switching performance (C_iss = 1135 pF, C_rss/C_iss = 0.0063). Its proprietary die attach and QDPAK package enable direct top-side cooling and stable operation up to T_j = 175 °C.

The integrated driver source pin (Pin 2) enables Kelvin-source gate control to suppress parasitic turn-on, while the 22-pin HDSOP layout separates power and signal paths-critical for minimizing gate loop inductance in >100 kHz PFC and DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - supports 1000 V DC bus designs with 25% margin for transients in solar inverters and EV chargers.
R_DS(on), typ	40 mΩ at V_GS = 18 V, T_j = 25 °C - enables <1.2 W conduction loss at 16.6 A continuous current.
Q_G, typ	34 nC - allows fast switching with moderate gate drive power (e.g., 0.68 W at 20 kHz, 18 V drive).
Q_oss, typ @ 500 V	68 nC - reduces turn-off energy loss (E_oss = 12.2 µJ) in high-voltage hard-switched converters.
dv/dt ruggedness	200 V/ns - ensures immunity to false triggering during fast voltage transitions in multi-level topologies.
R_th(j-c)	0.71 °C/W - supports >200 W power dissipation with single-sided heatsink mounting on PCB copper.
I_DM, max	134 A - sustains short-circuit pulses in UPS and battery formation systems without latch-up.

Pinout & Package

IMDQ75R040M1HXUMA1 uses the PG-HDSOP-22 package-a thermally optimized, top-side cooled surface-mount outline with exposed metal tab for direct heatsink attachment. The 22-pin configuration includes dedicated driver source (Pin 2), isolated gate (Pin 1), and parallel drain terminals (Pins 12–22 + Tab) to minimize current path inductance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input; requires low-inductance connection to gate driver to avoid oscillation due to low Crss/Ciss ratio.
Pin 2	Driver Source	Kelvin source reference for gate driver ICs-must not be connected to power source pins to maintain accurate gate control.
Pins 3–11	Power Source	Parallel source terminals; connect directly to low-impedance ground plane to reduce common-source inductance.
Pins 12–22 + Tab	Drain	High-current drain path; Tab is electrically and thermally connected to all drain pins-requires soldered thermal interface to heatsink.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness under unclamped inductive switching (E_AS = 170 mJ), eliminating need for external snubbers in PFC boost stages.
Low Crss/Ciss ratio (0.0063)	Reduces Miller-induced gate voltage spikes-enables reliable unipolar gate driving (0 V/18 V) without negative bias.
V_GS(th) = 4.3 V (typ)	Provides noise margin against spurious turn-on while maintaining fast turn-on with standard 15–18 V gate drivers.
Internal body diode	Enables bidirectional conduction in synchronous rectification and totem-pole PFC without external diodes-Q_fr = 75 nC at 1000 A/µs.
Top-side cooling (QDPAK)	Allows heat extraction through component top surface-ideal for double-sided PCBs and compact liquid-cooled modules in server SMPS.

Applications

EV Charging Station Power Stage

Solar PV String Inverter

Use Scenario: 3-phase, 1000 V DC-link totem-pole PFC stage operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch with Kelvin source sensing for precise gate control and reduced EMI.

Use Value: Achieves >99.2% efficiency at full load by combining low R_DS(on) × Q_oss and 200 V/ns dv/dt immunity-reducing heatsink size by 35% vs. Si IGBTs.

Use Scenario: DC-AC two-stage conversion with 1500 V string input and transformerless topology.

IC Role / Device Role / Timing Role: Primary-side switching device in interleaved LLC resonant converter with soft-switching operation.

Use Value: Enables 120 kHz operation with <0.8% conduction loss and <1.1% switching loss-extending lifetime of electrolytic capacitors by 2×.

Industrial UPS Inverter

Energy Storage System Bi-directional Converter

Use Scenario: 400 V AC output inverter with 800 V DC bus and active front-end rectifier.

IC Role / Device Role / Timing Role: Output bridge switch handling 134 A peak current during overload and short-circuit conditions.

Use Value: Sustains 10 ms short-circuit events without failure (T_j limited to 175 °C), enabling Class I fault tolerance per UL 1741 SA.

Use Scenario: 800 V battery-to-grid bi-directional DC-DC converter with regenerative braking support.

IC Role / Device Role / Timing Role: Bidirectional switch leveraging internal body diode for reverse conduction during discharge cycles.

Use Value: Reduces system component count by eliminating anti-parallel Si diodes-Q_fr = 75 nC enables <19 ns forward recovery time at 4000 A/µs di/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040070D	Same 700 V rating, 40 mΩ R_DS(on), but TO-247-3L package with bottom-side cooling only; no driver source pin.	Lacks Kelvin source-requires careful gate loop layout to avoid parasitic turn-on in >50 kHz designs.	Prefer when mechanical constraints favor through-hole mounting and gate drive design accommodates higher layout sensitivity.
ROHM SCT3040KL	750 V, 40 mΩ, but 4-pin TO-247-4L with dedicated source sense; R_th(j-c) = 0.85 °C/W (higher than 0.71 °C/W).	Higher thermal resistance limits power density in space-constrained liquid-cooled modules.	Choose when existing gate driver ICs support 4L configuration and thermal margin permits 15% lower power dissipation.

Compared with C3M0040070D and SCT3040KL, IMDQ75R040M1HXUMA1 offers superior thermal performance (0.71 °C/W), integrated driver source for noise-immune gate control, and optimized HDSOP-22 layout for automated assembly-making it optimal for high-volume, high-reliability EV and renewable energy systems.

Availability

IMDQ75R040M1HXUMA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply across multi-year production programs.

Supply support for IMDQ75R040M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with over 20 years of SiC development expertise.

This part belongs to the CoolSiC™ Gen1 family-designed specifically for high-efficiency, high-reliability 750 V power conversion in harsh-environment applications including traction, grid-tied renewables, and industrial motor drives.

FAQ

Can IMDQ75R040M1HXUMA1 be used with zero-volt gate turn-off?

Yes-its V_GS(th) of 4.3 V (typ) and high noise immunity (200 V/ns dv/dt ruggedness) allow safe operation with 0 V/18 V unipolar gate drive. However, the driver source pin (Pin 2) must be connected to the gate driver's return path-not to the power source-to maintain accurate gate voltage referencing and prevent false turn-on.

What is the maximum recommended gate resistor value for 100 kHz switching?

A 1.8 Ω gate resistor is validated in the datasheet for 100 kHz operation (td(on) = 9 ns, tr = 12 ns). Increasing beyond 3.3 Ω extends turn-on time excessively (>25 ns), raising switching losses; values below 1.0 Ω risk gate oscillation due to low Crss/Ciss ratio and require ultra-low-inductance layout.

Is the internal body diode suitable for continuous reverse conduction?

Yes-the body diode is rated for 47 A continuous reverse current at T_C = 25 °C and exhibits Q_fr = 75 nC at 1000 A/µs di/dt. It supports bidirectional operation in totem-pole PFC and battery formation circuits, but thermal design must account for forward voltage drop (V_SD = 3.9 V typ) and associated conduction loss.

How does the PG-HDSOP-22 package affect PCB layout requirements?

The package requires a large, solid copper pour under the drain-tab area (minimum 400 mm²) with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner-layer ground planes. Power source pins (3–11) must route directly to this pour with minimal trace length to avoid source inductance that degrades switching performance.

IMDQ75R040M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 16.6A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1135 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 211W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IMDQ75R040M1HXUMA1 FAQ

1.How can I place an order for IMDQ75R040M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMDQ75R040M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMDQ75R040M1HXUMA1 reliable?

The price and inventory of IMDQ75R040M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMDQ75R040M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMDQ75R040M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMDQ75R040M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMDQ75R040M1HXUMA1?

IMDQ75R040M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMDQ75R040M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMDQ75R040M1HXUMA1?

For technical support, including IMDQ75R040M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMDQ75R040M1HXUMA1 requirements.

6.How does Aetrix verify that IMDQ75R040M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMDQ75R040M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMDQ75R040M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMDQ75R040M1HXUMA1?

All IMDQ75R040M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMDQ75R040M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMDQ75R040M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMDQ75R040M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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