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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMDQ75R060M1HXUMA1

Name: IMDQ75R060M1HXUMA1
Brand: Infineon Technologies
SKU: IMDQ75R060M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMDQ75R060M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IMDQ75R060M1HXUMA1.pdf

Description:: IMDQ75R060M1HXUMA1

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Product details

Overview

IMDQ75R060M1HXUMA1 from Infineon is a 750 V, 60 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with integrated driver source pin and top-side cooling capability. It delivers 89 A peak drain current, 23 nC total gate charge, and 54 nC output charge at 500 V - enabling high-efficiency hard-switching operation in 800 V DC bus systems such as EV charging stations and solar inverters.

For engineers reviewing the IMDQ75R060M1HXUMA1 datasheet, IMDQ75R060M1HXUMA1 pinout, IMDQ75R060M1HXUMA1 application, or IMDQ75R060M1HXUMA1 equivalent, key selection criteria include R_DS(on) × Q_oss efficiency trade-off, dv/dt ruggedness (200 V/ns), gate threshold voltage stability (4.3 V typ), and thermal resistance (0.9 °C/W junction-to-case) for high-power density designs.

Technical Context

This CoolSiC™ G1 MOSFET uses silicon carbide die with proprietary die attach and QDPAK top-side cooling architecture. Its 3.5–5.6 V gate threshold voltage and low Crss/Ciss ratio (4.8 pF / 779 pF) suppress parasitic turn-on under high dv/dt conditions, supporting unipolar 0 V/18 V gate drive without external negative bias.

The device integrates an internal body diode with 57 nC forward recovery charge and 16 ns recovery time at 1000 A/µs di/dt. Its 750 V blocking rating is validated across −55 °C to +175 °C junction temperature, with 100% avalanche testing ensuring robustness in overvoltage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Enables direct use in 800 V DC-link systems (e.g., EV chargers, PV string inverters) without series stacking.
R_DS(on), typ	60 mΩ at V_GS = 18 V, T_j = 25 °C - Delivers <1.2 W conduction loss at 11.1 A, critical for high-current half-bridge legs.
Q_G, typ	23 nC - Supports >100 kHz switching with standard gate drivers; low Q_GD/Q_G ratio improves Miller immunity.
Q_oss, typ @ 500 V	54 nC - Reduces turn-off energy loss (E_oss = 9.6 µJ), directly lowering dissipation in hard-switched PFC and LLC stages.
R_th(j-c)	0.9 °C/W - Enables >150 W power dissipation with moderate heatsink; top-side cooling allows PCB-integrated thermal management.
dv/dt ruggedness	200 V/ns - Sustains fast voltage transients in high-frequency SiC converters without false triggering.
I_DM, max	89 A - Supports short-circuit withstand in motor drives and UPS inverters with pulse-width-limited fault handling.

Pinout & Package

PG-HDSOP-22 package with exposed thermal tab (Drain-connected) and dedicated Driver Source (Kelvin source) pin for accurate gate control. Top-side cooling design requires thermal interface material on the metal tab surface.

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pins 12–22	Drain	High-current power return path; electrically connected to thermal tab for low-inductance, low-thermal-resistance heat transfer.
Pin 1	Gate	Main gate control input; routed separately from power loops to minimize noise coupling into gate drive path.
Pin 2	Driver Source (Kelvin Source)	Reference node for gate driver IC feedback; isolates gate loop from high-di/dt source current, preventing V_GS undershoot.
Pins 3–11	Power Source	Main source current path; carries full load current but excluded from gate control loop to avoid sensing error.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 113 mJ at 4.3 A, enabling reliable operation in unclamped inductive switching events.
Low Crss/Ciss ratio	Crss = 4.8 pF, Ciss = 779 pF → Crss/Ciss ≈ 0.6% - Minimizes Miller-induced gate voltage spikes during high dv/dt commutation.
High V_GS(th)	Typical 4.3 V, min 3.5 V - Reduces risk of accidental turn-on from gate noise or leakage in high-noise industrial environments.
Top-side cooling (QDPAK)	Thermal resistance reduced by 30% vs. standard D²PAK - Allows compact heatsink placement above PCB, freeing bottom-side routing space.
Internal body diode	Q_fr = 57 nC, t_fr = 16 ns at 1000 A/µs - Enables synchronous rectification in totem-pole PFC without external SiC Schottky.

Applications

EV Charging Station Power Stage

Solar PV String Inverter DC-DC Converter

Use Scenario: 22 kW bi-directional OBC or off-board DC fast charger operating at 800 V DC bus with 100 kHz interleaved totem-pole PFC.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in dual active bridge (DAB) isolation stage, switching at 200 kHz with zero-voltage switching.

Use Value: 60 mΩ R_DS(on) and 54 nC Q_oss reduce conduction + switching losses by 22% vs. comparable 650 V Si IGBT, enabling >98.5% system efficiency.

Use Scenario: 1500 V DC string input feeding isolated bidirectional DC-DC stage for battery storage integration.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge converter, operating at 150 kHz with soft switching.

Use Value: 750 V rating eliminates need for series devices; 0.9 °C/W R_th(j-c) supports 120 W continuous dissipation with passive heatsinking.

Industrial UPS Inverter Module

Telecom 48 V–12 V Intermediate Bus Converter

Use Scenario: 10 kVA online UPS with three-phase inverter delivering clean 230 V AC during grid failure.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/SiC hybrid inverter leg, handling 89 A peak current during overload conditions.

Use Value: 89 A I_DM and 100% avalanche rating ensure safe operation during 150% load surges without desaturation protection circuitry.

Use Scenario: High-density 1200 W telecom server PSU using GaN-assisted SiC hybrid topology for 48 V input to 12 V output conversion.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter, leveraging internal body diode for dead-time conduction.

Use Value: 57 nC Q_fr and 16 ns t_fr cut reverse recovery loss by 40% vs. discrete Si Schottky, improving light-load efficiency by 1.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065070D	700 V rating, 65 mΩ R_DS(on), TO-247-4L package, no Kelvin source pin	Lacks driver source pin; requires careful gate loop layout to mitigate Miller effects in >100 kHz designs	Prefer when cost sensitivity outweighs layout complexity and top-side cooling requirement
ROHM SCT3060AL	650 V rating, 60 mΩ R_DS(on), TO-263-7L package, Kelvin source present, higher Q_G (32 nC)	Lower voltage rating limits use to 700 V DC bus; higher Q_G increases gate drive loss at >150 kHz	Prefer for 650 V systems where gate drive simplicity and footprint match legacy TO-263 layouts

Compared with C3M0065070D and SCT3060AL, IMDQ75R060M1HXUMA1 uniquely combines 750 V rating, Kelvin source, and 0.9 °C/W thermal resistance - making it optimal for compact, high-reliability 800 V systems requiring minimal gate drive overhead and superior thermal headroom.

Availability

IMDQ75R060M1HXUMA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMDQ75R060M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide innovation since 2001.

This device belongs to the CoolSiC™ G1 family - engineered specifically for high-efficiency, high-reliability 750–1200 V power conversion in automotive, renewable energy, and industrial applications.

FAQ

Can IMDQ75R060M1HXUMA1 be used with 0 V / 15 V gate drive?

Yes - its 3.5–5.6 V gate threshold voltage and robust 20 V maximum gate-source voltage allow safe operation with 0 V/15 V unipolar drive. The high V_GS(th) minimizes risk of spurious turn-on, and the dedicated Driver Source pin ensures accurate gate voltage referencing even under high di/dt conditions.

What is the role of the Driver Source (Pin 2) versus Power Source (Pins 3–11)?

Pin 2 (Driver Source) provides a Kelvin connection to the MOSFET's source region for gate driver feedback, eliminating voltage drop errors caused by high-current source path inductance. Pins 3–11 carry the full load current but must not be used for gate control reference - swapping them causes unstable switching and potential shoot-through.

Is top-side cooling mandatory for this device?

No, but strongly recommended. The PG-HDSOP-22 package is optimized for top-side thermal interface: the exposed tab is Drain-connected and designed for TIM application to an upper heatsink. Relying solely on PCB conduction via Pins 3–11 increases junction temperature by >25 °C at 100 W dissipation, risking derating or lifetime reduction.

Does the internal body diode support synchronous rectification in totem-pole PFC?

Yes - the body diode exhibits 57 nC Q_fr and 16 ns t_fr at 1000 A/µs di/dt, enabling efficient bidirectional conduction in totem-pole PFC without external anti-parallel SiC Schottky. However, gate timing must ensure zero-voltage turn-on to avoid reverse recovery stress during transition.

IMDQ75R060M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 11.1A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 779 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IMDQ75R060M1HXUMA1 FAQ

1.How can I place an order for IMDQ75R060M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMDQ75R060M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMDQ75R060M1HXUMA1 reliable?

The price and inventory of IMDQ75R060M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMDQ75R060M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMDQ75R060M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMDQ75R060M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMDQ75R060M1HXUMA1?

IMDQ75R060M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMDQ75R060M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMDQ75R060M1HXUMA1?

For technical support, including IMDQ75R060M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMDQ75R060M1HXUMA1 requirements.

6.How does Aetrix verify that IMDQ75R060M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMDQ75R060M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMDQ75R060M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMDQ75R060M1HXUMA1?

All IMDQ75R060M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMDQ75R060M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMDQ75R060M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMDQ75R060M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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