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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMDQ75R090M1HXUMA1

Name: IMDQ75R090M1HXUMA1
Brand: Infineon Technologies
SKU: IMDQ75R090M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMDQ75R090M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IMDQ75R090M1HXUMA1.pdf

Description:: IMDQ75R090M1HXUMA1

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Product details

Overview

IMDQ75R090M1HXUMA1 from Infineon is a 750 V, 90 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with integrated driver source pin and top-side cooling capability. It delivers 60 A peak drain current, 15 nC total gate charge, and 39 nC output charge at 500 V - optimized for high-efficiency, high-frequency hard- and soft-switching in 800 V DC bus systems such as EV fast chargers and solar inverters.

For engineers reviewing the IMDQ75R090M1HXUMA1 datasheet, IMDQ75R090M1HXUMA1 pinout, IMDQ75R090M1HXUMA1 application, or IMDQ75R090M1HXUMA1 equivalent, key selection criteria include R_DS(on) × Q_oss performance, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), internal body diode recovery (Q_fr = 46–78 nC), and thermal resistance (1.17 °C/W junction-to-case).

Technical Context

This CoolSiC™ G1 device uses wide-bandgap SiC technology to achieve low conduction loss (R_DS(on) = 90 mΩ typ at 25 °C) and superior switching efficiency via low Crss/Ciss (3.2 pF / 542 pF) and high V_GS(th) (4.3 V typ), reducing risk of parasitic turn-on. Its 750 V rating supports operation across full industrial temperature range (−55 to +175 °C).

The PG-HDSOP-22 package features isolated tab (drain-connected pins 12–22), dedicated gate (pin 1), power source (pins 3–11), and driver source (pin 2) - enabling Kelvin-source sensing and minimizing gate loop inductance. Internal body diode enables bidirectional conduction in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - supports 800 V DC-link systems with 20% margin for transients and ripple.
R_DS(on), typ	90 mΩ at V_GS = 18 V, T_j = 25 °C - enables low conduction loss in high-current PFC and inverter stages.
Q_G, typ	15 nC - allows efficient gate driving with moderate gate resistor values (e.g., 1.8 Ω) while maintaining fast switching.
Q_oss, typ @ 500 V	39 nC - reduces turn-off energy loss (E_oss = 6.9 µJ) in high-voltage hard-switching applications.
dv/dt ruggedness	200 V/ns - ensures reliable operation under fast voltage transients without false triggering.
R_th(j-c)	1.17 °C/W - enables high-power dissipation (128 W at T_C = 25 °C) with top-side cooling integration.
V_GS(th), typ	4.3 V - provides robust noise immunity against gate-induced turn-on in noisy high-dV/dt environments.

Pinout & Package

Package: PG-HDSOP-22 - thermally enhanced, top-side cooled, surface-mount package with isolated copper tab (drain-connected). Features dedicated driver source (Kelvin source) pin for accurate gate control and reduced Miller effect.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal; requires low-inductance connection to gate driver for optimal switching.
Pins 3–11	Power Source	Main source path for high-current return; connects to PCB ground plane or source rail.
Pin 2	Driver Source	Kelvin source reference for gate driver feedback; must not be connected to power source or exchanged with pins 3–11.
Pins 12–22 + Tab	Drain	High-voltage drain node; tab is electrically connected to drain and serves as primary thermal interface for top-side cooling.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching (E_AS = 75 mJ), critical for motor drives and UPS.
Low R_DS(on) × Q_fr	Minimizes reverse recovery losses in totem-pole PFC and bidirectional converters using internal body diode.
Crss/Ciss ratio < 0.6%	Reduces Miller-induced gate oscillation and improves controllability during high dv/dt transitions.
Top-side cooling interface	Enables direct thermal interface to heatsink above PCB, bypassing board-level thermal bottlenecks.
Infineon die attach technology	Enhances long-term thermal cycling reliability under repeated power-on/off and load transients.

Applications

EV Fast Charging Station

Solar PV String Inverter

Use Scenario: 15–35 kW AC/DC front-end with interleaved totem-pole PFC and dual-phase LLC DC/DC stage.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch in totem-pole PFC leg, operating at 100–200 kHz with zero-voltage switching.

Use Value: 90 mΩ R_DS(on) and 39 nC Q_oss enable >99% PFC efficiency at 800 V DC bus while maintaining thermal margin at 75 °C ambient.

Use Scenario: 10–25 kW string inverter with three-level NPC topology feeding 1000 V DC grid.

IC Role / Device Role / Timing Role: Outer-leg switching device in NPC clamping configuration, handling full DC-link voltage swing.

Use Value: 750 V rating and 200 V/ns dv/dt ruggedness ensure stable operation during lightning surge events and rapid grid fault clearing.

Industrial UPS System

Server SMPS Rectification

Use Scenario: Online double-conversion UPS with 400–800 V battery backup and 10–20 kVA inverter output.

IC Role / Device Role / Timing Role: Inverter bridge switch in IGBT-replacement design, operating in 16–25 kHz PWM mode.

Use Value: 60 A peak current and 1.17 °C/W R_th(j-c) support continuous 15 kVA output with forced-air cooling and no derating up to 60 °C ambient.

Use Scenario: 3 kW server rectifier module using active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch with unipolar gate drive and Kelvin source sensing.

Use Value: Dedicated driver source (pin 2) eliminates source inductance impact on gate waveform, reducing switching loss by ~12% vs. standard source connection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0090070D	700 V rating, 90 mΩ, TO-247-3L package, no driver source pin	Lacks Kelvin source; higher gate loop inductance limits hard-switching frequency to ≤150 kHz	Prefer when cost-sensitive, lower-voltage (≤600 V DC) designs prioritize simplicity over ultra-high efficiency.
IXFH75N65X2	650 V Si IGBT, 75 A, TO-247 package, higher V_CE(sat) and slower switching	Higher conduction loss (2.1 V) and E_off; unsuitable for >50 kHz operation	Consider only for legacy 400 V systems where gate drive compatibility and thermal inertia outweigh efficiency needs.

Compared with C3M0090070D and IXFH75N65X2, IMDQ75R090M1HXUMA1 uniquely combines 750 V capability, Kelvin-source control, and top-side cooling - enabling compact, air-cooled 800 V systems with >98.5% system efficiency at full load.

Availability

IMDQ75R090M1HXUMA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for IMDQ75R090M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies since 2001.

This device belongs to the CoolSiC™ G1 family - engineered specifically for high-efficiency, high-power-density 750–1200 V systems in renewable energy, e-mobility, and industrial power conversion.

FAQ

What is the maximum recommended gate drive voltage for reliable long-term operation?

The datasheet specifies a recommended turn-on voltage of 18 V and turn-off voltage of 0 V. Static gate-source voltage must stay within −2 V to +20 V during operation; transient excursions up to −10 V/+25 V are allowed for ≤500 ns. Exceeding 20 V continuously accelerates gate oxide degradation and increases R_DS(on) drift over lifetime.

Can the driver source (pin 2) and power source (pins 3–11) be shorted together?

No. The driver source pin is a dedicated Kelvin connection for gate driver feedback and must remain isolated from the main power source path. Shorting them introduces source inductance into the gate loop, degrading switching speed, increasing overshoot, and risking parasitic turn-on - violating Infineon's validated layout requirements.

Is this device qualified for automotive applications?

No. IMDQ75R090M1HXUMA1 is fully qualified per JEDEC JESD47 for industrial applications (−55 °C to +175 °C), but it is not AEC-Q101 qualified. For automotive traction or on-board charger use, Infineon's automotive-grade variants (e.g., IMW120R090M1H) must be selected instead.

How does the internal body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode has V_SD = 3.9–5.3 V and Q_fr = 46–78 nC at 7.4 A, which is higher conduction loss and reverse recovery charge than discrete 650 V SiC Schottkys (e.g., IDH08SG60C, V_F ≈ 1.5 V). It is intended for limited bidirectional conduction - not continuous freewheeling - and should be evaluated per application stress conditions.

IMDQ75R090M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 83mOhm @ 7.4A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 542 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 128W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IMDQ75R090M1HXUMA1 FAQ

1.How can I place an order for IMDQ75R090M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMDQ75R090M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMDQ75R090M1HXUMA1 reliable?

The price and inventory of IMDQ75R090M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMDQ75R090M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMDQ75R090M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMDQ75R090M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMDQ75R090M1HXUMA1?

IMDQ75R090M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMDQ75R090M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMDQ75R090M1HXUMA1?

For technical support, including IMDQ75R090M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMDQ75R090M1HXUMA1 requirements.

6.How does Aetrix verify that IMDQ75R090M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMDQ75R090M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMDQ75R090M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMDQ75R090M1HXUMA1?

All IMDQ75R090M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMDQ75R090M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMDQ75R090M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMDQ75R090M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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