Infineon Technologies IMLT65R040M2HXTMA1

Overview

IMLT65R040M2HXTMA1 from Infineon is a 650 V, 40 mΩ SiC MOSFET in PG-HDSOP-16 package with integrated body diode, designed for high-frequency hard-switching power stages in industrial and EV infrastructure. It delivers 143 A peak drain current, 4.5 V gate threshold voltage, and ultra-low 7.2 μJ turn-off switching loss at 400 V, enabling >99% efficiency in 3-phase inverters and DC fast-charging modules.

For engineers reviewing the IMLT65R040M2HXTMA1 datasheet, IMLT65R040M2HXTMA1 pinout, IMLT65R040M2HXTMA1 application, or IMLT65R040M2HXTMA1 equivalent, key selection criteria include its 0.56 °C/W junction-to-case thermal resistance, non-interchangeable source pins (driver vs. power), and robust 200 V/ns dv/dt immunity-critical for high-density SMPS and solar PV string inverters.

Technical Context

This CoolSiC™ G2 device uses trench-based 2nd-generation silicon carbide technology to achieve benchmark R_DS(on) of 40 mΩ at V_GS = 18 V and T_j = 25 °C, with stable 49 mΩ max at 175 °C. Its 53 nC Q_oss and 28 nC total gate charge enable fast, low-loss switching up to 200 kHz.

The PG-HDSOP-16 package integrates separate driver and power source terminals (Pin 7 vs. Pins 1–6) to suppress common-source inductance and prevent parasitic turn-on. The internal body diode supports unidirectional hard commutation with 12.2 ns forward recovery time and 56 nC recovery charge at 1000 A/μs di/dt.

Key Specifications

Pinout & Package

Package: PG-HDSOP-16 with exposed thermal tab (Drain-connected), optimized for low-inductance layout and high-power density mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Compared with C3M0040065K and SCT3040KL, IMLT65R040M2HXTMA1 provides superior thermal performance (0.56 vs. ≥0.75 °C/W), guaranteed dv/dt immunity, and built-in source separation-making it the only option qualified for 100+ kW modular EV charger stacks and 25 kW solar inverters with passive cooling.

Availability

IMLT65R040M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production programs.

Supply support for IMLT65R040M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ G2 family, engineered specifically for high-efficiency, high-power-density switching applications in 650 V industrial and EV infrastructure-emphasizing ruggedness, ease of use, and system-level cost reduction.

FAQ

What is the maximum continuous drain current rating for IMLT65R040M2HXTMA1?

The maximum continuous DC drain current is 57 A at T_c = 25 °C and 40 A at T_c = 100 °C, as specified in Table 2 of the Infineon datasheet. This rating assumes proper thermal management with the PG-HDSOP-16 package mounted on a 4-layer PCB with 2 oz copper and ≥10 cm² thermal pad area.

Can the driver source (Pin 7) and power source (Pins 1–6) be shorted together?

No-Infineon explicitly warns that exchanging or shorting these pins may cause malfunction. Pin 7 serves as the low-inductance reference for the gate driver, while Pins 1–6 carry high-current return paths. Mixing them introduces common-source inductance that degrades switching speed and risks parasitic turn-on during high dv/dt events.

Does IMLT65R040M2HXTMA1 support bipolar gate driving?

Yes-the device supports flexible gate driving including bipolar schemes (e.g., +18 V turn-on / –5 V turn-off), enabled by its robust gate oxide and 23 V absolute maximum V_GS. This capability improves noise immunity and reduces Miller-induced oscillations in high-frequency motor drives, as confirmed in Section 1.2 of the datasheet.

What is the avalanche energy rating for single-pulse conditions?

The single-pulse avalanche energy rating is 132 mJ at I_D = 4.9 A and V_DS = 50 V, per Table 2. This rating validates ruggedness against inductive load switching faults in UPS and motor drive applications, though repetitive avalanche operation is not recommended per Infineon's design guidelines.