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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMLT65R060M2HXTMA1

Name: IMLT65R060M2HXTMA1
Brand: Infineon Technologies
SKU: IMLT65R060M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMLT65R060M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMLT65R060M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:364

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Product details

Overview

IMLT65R060M2HXTMA1 from Infineon is a 650 V, 60 mΩ SiC MOSFET in PG-HDSOP-16 package with integrated body diode, designed for high-frequency hard-switching in power conversion stages of solar inverters, EV chargers, and UPS systems. It delivers 96 A pulsed drain current, 4.5 V gate threshold voltage, and ultra-low 5.5 μJ turn-off switching loss at 400 V.

For engineers reviewing the IMLT65R060M2HXTMA1 datasheet, IMLT65R060M2HXTMA1 pinout, IMLT65R060M2HXTMA1 application, or IMLT65R060M2HXTMA1 equivalent, key selection criteria include its 0.75 °C/W junction-to-case thermal resistance, robust 200 V/ns dv/dt immunity, 175 °C max junction temperature, and non-interchangeable source/driver-source pins critical for gate drive layout integrity.

Technical Context

This CoolSiC™ G2 MOSFET employs silicon carbide trench technology to achieve low R_DS(on) (73 mΩ max at 25°C) while maintaining high avalanche ruggedness (89 mJ single-pulse) and stable V_GS(th) (3.5–5.6 V). Its internal gate resistance of 5.1 Ω enables predictable switching behavior without external gate resistors in many designs.

The device integrates a robust body diode with 10.2 ns forward recovery time and 42 nC recovery charge, supporting bidirectional conduction in totem-pole PFC and synchronous rectification. Its TOLT interconnection ensures low-inductance, high-current path routing across Drain pins 9–16 and Tab, minimizing parasitic oscillation in >100 kHz topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports DC-link voltages up to 400 V nominal with 1.6× safety margin in 3-phase rectified systems
R_DS(on)	60 mΩ typ - enables <1.5 W conduction loss at 15.4 A, reducing heatsink size in 5–10 kW converters
Q_G	19 nC - allows fast switching with moderate gate driver current (≈2 A peak), easing driver IC selection
E_oss	5.5 μJ @ 400 V - cuts turn-off loss by >40% vs comparable Si MOSFETs, improving efficiency above 50 kHz
T_j,max	175 °C - permits operation in sealed enclosures or high-ambient environments without derating
R_th(j-c)	0.75 °C/W - enables direct mounting to cold plates for >200 W dissipation without thermal interface material degradation
dv/dt immunity	200 V/ns - suppresses false turn-on during high-slew-rate commutation in half-bridge configurations

Pinout & Package

Package: PG-HDSOP-16 with exposed metal tab (Drain-connected), optimized for high-current, low-inductance PCB layouts. Thermal pad soldered directly to copper pour for minimal R_th(j-c).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 9–16 + Tab)	Main current return path	Parallelized drain terminals reduce current density and skin effect losses; Tab provides primary thermal path
Gate (Pin 8)	Control input	Single-point gate connection minimizes loop inductance; requires Kelvin source routing for accurate V_GS control
Power Source (Pins 1–6)	Main source current path	Carries full load current to external source node; must be routed with low inductance to avoid shoot-through risk
Driver Source (Pin 7)	Kelvin source reference	Provides dedicated low-noise return for gate driver; not interchangeable with Power Source per datasheet warning
Internal Body Diode	Integrated anti-parallel path	Enables unidirectional freewheeling without external diode; rated for hard commutation with 10.2 ns t_fr

Key Features

Feature	Design Value
Robust body diode with hard commutation rating	10.2 ns forward recovery time and 42 nC Q_frm enable reliable operation in totem-pole PFC without snubbers
Benchmark V_GS(th) = 4.5 V	Reduces risk of spurious turn-on during noise transients while allowing standard 15 V gate drivers
TOLT interconnect technology	Eliminates wire bonds, lowering package inductance (<1.5 nH) and improving thermal cycling reliability
Non-interchangeable source pins	Prevents layout errors that cause gate overvoltage or shoot-through by enforcing correct Kelvin sensing topology
JEDEC-qualified reliability	Validated per AEC-Q101 stress tests, supporting industrial and automotive-grade system lifetimes

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-level NPC or T-type inverter stage converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 30–100 kHz PWM stage with active clamping.

Use Value: 60 mΩ R_DS(on) and 5.5 μJ E_oss reduce total losses by ≈18 W per switch vs Si alternatives, enabling >99% peak efficiency.

Use Scenario: Isolated DC-DC stage in 150–350 kW charging cabinet stepping down 1000 V bus to 400–800 V battery range.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge operating at 120–200 kHz.

Use Value: 200 V/ns dv/dt immunity prevents false triggering during ZVS transitions, eliminating need for complex gate voltage clamping.

Uninterruptible Power Supplies

Industrial Motor Drives

Use Scenario: Online double-conversion UPS with bidirectional inverter/rectifier using shared DC link.

IC Role / Device Role / Timing Role: Bidirectional switch in Vienna rectifier front-end and IGBT-based inverter output stage.

Use Value: Integrated body diode with 10.2 ns t_fr supports regenerative braking energy return without external diodes, cutting BOM count by 2 devices per phase.

Use Scenario: 7.5–22 kW servo drive with field-oriented control and 10–20 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Inverter leg switch handling 40–96 A peak motor current with short-circuit protection.

Use Value: 89 mJ single-pulse avalanche energy withstands IGBT-style short-circuit events up to 10 μs, simplifying fault-handling firmware.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	Same 650 V/65 mΩ rating but TO-247-4L package; higher R_th(j-c) (1.0 °C/W); no integrated body diode	Requires external SiC Schottky diode for bidirectional conduction; less suitable for totem-pole PFC	Select when legacy TO-247 footprint compatibility is required and thermal budget allows higher R_th
ROHM SCT3060AL	650 V/60 mΩ in TO-263-7L; lower Q_G (14 nC); 150 °C T_j,max; no TOLT interconnect	Limited to 150 °C ambient operation; higher package inductance increases EMI filtering burden	Choose for cost-sensitive 10–30 kW applications where 25 °C lower junction limit is acceptable

Compared with C3M0065065K and SCT3060AL, IMLT65R060M2HXTMA1 offers superior thermal performance (0.75 °C/W), integrated body diode functionality, and TOLT-enabled low-inductance layout-making it optimal for compact, high-reliability 50–100 kHz power stages where board space and thermal management are constrained.

Availability

IMLT65R060M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IMLT65R060M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and renewable energy systems operating above 50 kHz.

FAQ

What is the maximum continuous drain current rating for IMLT65R060M2HXTMA1?

The maximum continuous DC drain current is 40 A at T_c = 25°C and 28 A at T_c = 100°C, as specified in Table 2 of the official Infineon datasheet Revision 2.3. This rating assumes proper heatsinking to maintain case temperature within limits and accounts for thermal derating above 25°C ambient.

Can Power Source (Pins 1–6) and Driver Source (Pin 7) be swapped in layout?

No - the datasheet explicitly warns that Power Source and Driver Source pins are not exchangeable. Swapping them risks gate overvoltage, inaccurate V_GS sensing, and potential device failure due to compromised Kelvin feedback path integrity and increased common-source inductance.

Does IMLT65R060M2HXTMA1 require a negative gate turn-off voltage?

No - the device features a robust 4.5 V gate threshold and is designed for 0 V turn-off. Its immunity to parasitic turn-on allows safe operation with zero-volt gate drive during off-state, eliminating need for negative bias and simplifying gate driver design.

What is the significance of the "TOLT" interconnect technology in this MOSFET?

TOLT (Thin Oxide Layer Technology) replaces traditional wire bonds with a planar metal interconnect, reducing package inductance below 1.5 nH and improving thermal cycling reliability. This enables faster switching, lower EMI, and longer lifetime in high-frequency, high-power applications like EV chargers and solar inverters.

IMLT65R060M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMLT65R060M2HXTMA1 FAQ

1.How can I place an order for IMLT65R060M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMLT65R060M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMLT65R060M2HXTMA1 reliable?

The price and inventory of IMLT65R060M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMLT65R060M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMLT65R060M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMLT65R060M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMLT65R060M2HXTMA1?

IMLT65R060M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMLT65R060M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMLT65R060M2HXTMA1?

For technical support, including IMLT65R060M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMLT65R060M2HXTMA1 requirements.

6.How does Aetrix verify that IMLT65R060M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMLT65R060M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMLT65R060M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMLT65R060M2HXTMA1?

All IMLT65R060M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMLT65R060M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMLT65R060M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMLT65R060M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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