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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT40R011M2HXTMA1

Name: IMT40R011M2HXTMA1
Brand: Infineon Technologies
SKU: IMT40R011M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT40R011M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT40R011M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT40R011M2HXTMA1 from Infineon is a 400 V, 11.3 mΩ typ. R_DS(on) silicon carbide (SiC) MOSFET in PG-HSOF-8 package, optimized for high-frequency switching and synchronous rectification in hard-switched topologies. It delivers 144 A continuous drain current at T_C = 25 °C, features a commutation-robust fast body diode (t_fr = 18.2 ns), and is fully JEDEC-qualified for industrial applications including solar PV inverters and UPS systems.

For engineers reviewing the IMT40R011M2HXTMA1 datasheet, IMT40R011M2HXTMA1 pinout, IMT40R011M2HXTMA1 application, or IMT40R011M2HXTMA1 equivalent, key selection criteria include its low Q_oss (494 pF), benchmark V_GS(th) (4.5 V typ.), 100% avalanche-tested ruggedness, and thermal performance enabled by TOLL interconnection technology.

Technical Context

This CoolSiC™ G2 MOSFET employs a planar SiC trench-gate structure with optimized charge distribution to minimize gate-drain capacitance (C_rss = 33 pF) and reduce switching losses. Its dynamic characteristics-Q_g = 85 nC, Q_gd = 17.5 nC, E_oss = 9.9 μJ-are calibrated for 100–500 kHz operation in resonant and hard-switched converters.

The device integrates an intrinsic body diode with low forward recovery charge (Q_rr = 86 nC @ di/dt = 1000 A/μs) and fast reverse recovery time (t_fr = 18.2 ns), enabling reliable synchronous rectification without external anti-parallel diodes in bidirectional power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage compatible with 380–400 V DC bus systems in solar inverters and UPS.
R_DS(on), typ.	11.3 mΩ at V_GS = 18 V, I_D = 37.1 A, T_j = 25 °C - Enables <1.5 W conduction loss at 100 A RMS in 10 kW LLC resonant converter.
Q_g	85 nC - Gate charge level requiring ≤1.5 A peak gate driver current for 50 ns turn-on in 200 kHz operation.
E_oss	9.9 μJ - Low output energy reduces turn-off loss and enables ZVS down to 100 kHz in half-bridge configurations.
t_fr	18.2 ns - Fast body diode recovery minimizes reverse recovery spikes and EMI in synchronous buck and totem-pole PFC.
R_thJC	0.35 °C/W - Junction-to-case thermal resistance supports >400 W power dissipation with standard heatsink mounting.
I_D, cont.	144 A at T_C = 25 °C - High current rating allows single-device use in 15–20 kW industrial motor drives without paralleling.

Pinout & Package

IMT40R011M2HXTMA1 uses the PG-HSOF-8 (TOLL) package: a thermally enhanced, surface-mount, 8-pin outline with exposed drain tab for direct heatsink attachment and low-inductance source return path.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Large copper area for low thermal resistance (R_thJC = 0.35 °C/W) and high-current conduction (I_D = 144 A).
Pin 1	Gate	Control input; requires 0–18 V drive; threshold V_GS(th) = 4.5 V typ. ensures noise immunity in noisy industrial environments.
Pins 3–8	Source	Parallel source terminals reduce loop inductance (<1.5 nH) and improve switching stability in high-di/dt applications.
Pin 2	Driver Source	Dedicated Kelvin source for gate driver feedback; isolates gate loop from power source current, minimizing Miller-induced false turn-on.

Key Features

Feature	Design Value
Commutation-robust fast body diode	t_fr = 18.2 ns and Q_rr = 86 nC enable reliable synchronous rectification without external diodes in totem-pole PFC.
TOLL interconnection technology	Reduces package inductance and improves thermal transfer, delivering 30% lower R_thJA vs. TO-247 in same PCB footprint.
Benchmark gate threshold voltage	V_GS(th) = 4.5 V typ. provides stable turn-on margin across temperature and process variation, reducing risk of shoot-through.
100% avalanche tested	Single-pulse E_AS = 220 mJ ensures robustness against inductive switching transients in motor drive and UPS fault conditions.
JEDEC-qualified for industrial use	Rated for T_j = 175 °C and qualified per JESD47, supporting long-term reliability in uncontrolled ambient environments.

Applications

Solar PV Inverters

UPS Systems

Use Scenario: Three-phase string inverters operating at 100–250 kHz with 800 V DC link and 50 kW output.

IC Role / Device Role / Timing Role: High-side and low-side switching device in interleaved boost and three-level NPC inverter stages.

Use Value: Low Q_oss (494 pF) and fast t_fr (18.2 ns) reduce switching losses by 22% vs. Si MOSFETs, enabling >99% peak efficiency.

Use Scenario: Online double-conversion UPS with 400 V DC bus, 10–30 kVA rating, and battery charging/discharge cycles.

IC Role / Device Role / Timing Role: Bidirectional switch in isolated DC-DC stage and inverter H-bridge for grid synchronization.

Use Value: 144 A continuous current and 100% avalanche rating ensure fault tolerance during battery short-circuit events.

Energy Storage Systems

Class-D Audio Amplifiers

Use Scenario: Bi-directional DC-DC converters in modular battery energy storage (BESS), handling 48–800 V battery stacks.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology managing charge/discharge at 200–300 kHz.

Use Value: R_DS(on) = 11.3 mΩ at 175 °C enables <3.2 W conduction loss at 80 A, reducing heatsink size by 40%.

Use Scenario: High-fidelity 1–5 kW Class-D amplifiers for professional audio, requiring <0.005% THD+N and wide bandwidth.

IC Role / Device Role / Timing Role: Output stage switch in half-bridge configuration with active snubbing and ultra-low dead-time control.

Use Value: Low C_rss (33 pF) and precise V_GS(th) (4.5 V) minimize distortion and enable <10 ns dead-time accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0015090K	R_DS(on) = 15 mΩ, V_DS = 900 V, TO-247-4L package, higher Q_g (105 nC)	Higher voltage rating suits 800 V DC bus systems but increases conduction loss by ~33% at 100 A	Select when system requires 900 V blocking and can accommodate larger heatsink due to higher R_DS(on).
IXFH40N40X3	Si-based, 400 V, R_DS(on) = 40 mΩ, TO-247, no integrated body diode, lower cost	Limited to <100 kHz operation; unsuitable for synchronous rectification due to slow body diode (t_rr > 100 ns)	Choose only for cost-sensitive, low-frequency (<60 kHz), non-synchronous designs where efficiency is secondary.

Compared with C3M0015090K and IXFH40N40X3, IMT40R011M2HXTMA1 offers optimal balance of low-loss switching (E_oss = 9.9 μJ), integrated fast body diode (t_fr = 18.2 ns), and industrial-grade ruggedness-making it uniquely suited for high-efficiency, high-reliability 400 V systems operating above 100 kHz.

Availability

IMT40R011M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, UPS systems, and energy storage applications requiring stable component supply, long lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IMT40R011M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolSiC™ G2 family-designed specifically for high-efficiency, high-power-density industrial power conversion systems operating from 100 kHz to 1 MHz.

FAQ

What gate driver voltage range is recommended for IMT40R011M2HXTMA1?

The datasheet specifies a recommended gate drive range of 0 V to 18 V, with V_GS(th) = 4.5 V typ. Driving at 15–18 V ensures full enhancement and minimal R_DS(on) dispersion across temperature, while staying within the absolute maximum V_GS rating of 23 V (DC) and 25 V (transient). Undervolting below 12 V increases conduction loss and thermal stress.

Is IMT40R011M2HXTMA1 suitable for synchronous rectification without an external diode?

Yes-the device integrates a commutation-robust body diode with t_fr = 18.2 ns and Q_rr = 86 nC (at di/dt = 1000 A/μs), validated for synchronous rectification in totem-pole PFC and LLC resonant converters. Its low reverse recovery charge and fast recovery time eliminate need for external anti-parallel SiC Schottky diodes in most 400 V applications.

How does the TOLL package improve thermal performance over TO-247?

The PG-HSOF-8 (TOLL) package reduces junction-to-case thermal resistance to 0.35 °C/W-35% lower than typical TO-247-4L SiC MOSFETs-by using a copper clip interconnect and large exposed drain tab. This enables 429 W power dissipation at T_C = 25 °C and supports higher current density on compact PCBs without forced air cooling.

What is the significance of 100% avalanche testing for this MOSFET?

Each IMT40R011M2HXTMA1 unit undergoes single-pulse avalanche testing to E_AS = 220 mJ (I_D = 37.1 A, R_L = 25 Ω), verifying ruggedness against inductive switching transients. This ensures reliable operation during short-circuit events in motor drives and UPS systems without requiring external protection circuitry beyond standard gate driving.

IMT40R011M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 13.4A (Ta), 144A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 37.1A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 13.3mA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 429W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT40R011M2HXTMA1 FAQ

1.How can I place an order for IMT40R011M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT40R011M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT40R011M2HXTMA1 reliable?

The price and inventory of IMT40R011M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT40R011M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMT40R011M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT40R011M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT40R011M2HXTMA1?

IMT40R011M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT40R011M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT40R011M2HXTMA1?

For technical support, including IMT40R011M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT40R011M2HXTMA1 requirements.

6.How does Aetrix verify that IMT40R011M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMT40R011M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT40R011M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMT40R011M2HXTMA1?

All IMT40R011M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT40R011M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT40R011M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMT40R011M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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