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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT40R015M2HXTMA1

Name: IMT40R015M2HXTMA1
Brand: Infineon Technologies
SKU: IMT40R015M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT40R015M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT40R015M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT40R015M2HXTMA1 from Infineon is a 400 V, 15.0 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package, optimized for high-frequency switching and synchronous rectification in hard-switched and resonant topologies. It delivers 111 A continuous drain current at T_C = 25 °C, features a benchmark gate threshold voltage of 4.5 V (typ), and incorporates CoolSiC™ G2 technology with 100% avalanche testing - deployed in solar PV inverters and UPS systems.

For engineers reviewing the IMT40R015M2HXTMA1 datasheet, IMT40R015M2HXTMA1 pinout, IMT40R015M2HXTMA1 application, or IMT40R015M2HXTMA1 equivalent, key selection criteria include its low R_DS(on) temperature stability, fast body diode commutation robustness, low Q_oss (363 pF), and validated thermal resistance (R_thJC = 0.44 °C/W) for high-power density designs.

Technical Context

This SiC MOSFET uses a planar trench-gate structure with optimized charge balance for reduced switching losses and enhanced dv/dt immunity. Its gate threshold voltage (V_GS(th) = 3.5–5.6 V) enables reliable turn-on under noisy conditions while supporting 0–18 V gate drive range.

The device integrates a commutation-robust intrinsic body diode with low forward recovery charge (Q_fr = 86–173 nC) and fast t_fr (11.0–17.1 ns), enabling efficient synchronous rectification without external Schottky diodes in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage suitable for 380 V AC input systems with margin.
R_DS(on), typ	15.0 mΩ at V_GS = 18 V, I_D = 27.1 A, T_j = 25 °C - Enables <1.5 W conduction loss at 100 A in parallel configurations.
Q_g	62 nC - Total gate charge determines driver power requirement and switching speed trade-off.
E_oss	7.3 μJ - Low output energy reduces turn-off loss and improves efficiency in high-frequency operation (>100 kHz).
R_thJC	0.44 °C/W - Enables >300 W power dissipation with modest heatsinking in TOLL package.
I_D, cont	111 A at T_C = 25 °C - Supports high-current half-bridge legs in 10–20 kW industrial inverters.
Q_oss, er	363 pF - Energy-related output capacitance critical for ZVS design margin and snubber sizing.

Pinout & Package

Package: PG-HSOF-8 (TOLL) - thermally enhanced, surface-mount, copper-clip package with exposed drain tab for low-inductance, high-current routing and superior thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (Pin 1)	Main power drain connection	Exposed copper pad - primary thermal path and low-inductance high-current return; must be soldered to large PCB copper area.
Gate (Pin 2)	Control terminal	Low-impedance gate input requiring Kelvin-source referenced driver layout to minimize oscillation risk.
Source (Pin 3–8)	Power source and signal reference	Multi-pin source connection - reduces source inductance and improves gate control stability during fast dI/dt switching.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_fr = 86–173 nC and t_fr = 11.0–17.1 ns - enables reliable synchronous rectification without external diodes in hard-commutated topologies.
Thermal performance	R_thJC = 0.44 °C/W - allows >300 W continuous power dissipation with minimal case-to-heatsink delta-T.
Gate drive compatibility	V_GS = 0–18 V rating - supports standard 15 V gate drivers and eliminates need for negative turn-off bias.
Avalanche ruggedness	100% tested single-pulse E_AS = 162 mJ - ensures reliability under transient overvoltage and short-circuit conditions.
Low Q_oss/Q_g ratio	Q_oss = 363 pF, Q_g = 62 nC - improves ZVS capability and reduces dead-time sensitivity in resonant converters.

Applications

Solar PV Inverters

UPS & Energy Storage Systems

Use Scenario: Three-phase string inverters operating at 100–200 kHz with unidirectional DC–AC conversion and active cooling.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage and H-bridge inverter leg for grid synchronization.

Use Value: 15 mΩ R_DS(on) and low E_oss reduce conduction + switching losses by >18% vs. Si MOSFETs at 10 kW per module.

Use Scenario: Bi-directional DC–DC converter in 48 V/400 V battery management systems with frequent charge/discharge cycling.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated dual-active-bridge (DAB) topology with soft-switching control.

Use Value: Fast, low-Q_fr body diode eliminates need for external SiC Schottky, reducing BOM count and layout complexity.

Class-D Audio Amplifiers

Motor Drives (Industrial)

Use Scenario: High-fidelity 1–5 kW audio amplifiers requiring ultra-low THD+N and wide bandwidth (>100 kHz).

IC Role / Device Role / Timing Role: Output half-bridge switch in PWM-based amplifier stage with precise dead-time control.

Use Value: Stable R_DS(on) over temperature and low C_iss/C_rss ratio minimize distortion and improve loop stability at high slew rates.

Use Scenario: Vector-controlled servo drives for CNC machines and robotics with 20–50 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Inverter leg switch in three-phase bridge delivering precise torque and flux control.

Use Value: 175 °C max junction temperature and 100% avalanche test enable safe operation during motor stall and overload events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0015090D	R_DS(on) = 15 mΩ, V_DS = 900 V, TO-247-3L package, higher Q_g (72 nC)	Higher voltage rating suits 800 V DC bus systems; larger package increases layout inductance	Select when system requires >650 V blocking or legacy TO-247 footprint compatibility
IXFH40N65X2	Si-based, 650 V, R_DS(on) = 65 mΩ, lower cost but 3× higher E_oss and no body diode robustness	Acceptable only in low-frequency (<50 kHz), non-synchronous applications with external freewheeling diodes	Select only for cost-sensitive, low-efficiency designs where thermal headroom and switching frequency are not constrained

Compared with C3M0015090D and IXFH40N65X2, IMT40R015M2HXTMA1 offers optimal balance of 400 V rating, TOLL-package thermal performance, and integrated body-diode functionality - making it uniquely suited for compact, high-frequency, synchronous-rectified topologies in renewable energy and industrial power conversion.

Availability

IMT40R015M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, UPS & energy storage systems, and Class-D audio amplifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IMT40R015M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ G2 MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and motor drives operating above 50 kHz with stringent thermal and reliability requirements.

FAQ

What is the maximum recommended gate drive voltage for IMT40R015M2HXTMA1?

The absolute maximum gate-source voltage is 23 V (DC) and 25 V (transient, ≤500 ns). Infineon specifies 0–18 V as the recommended operating range, with 15–18 V ensuring full enhancement and low R_DS(on), while avoiding oxide stress. Driving above 18 V provides negligible R_DS(on) improvement but increases gate leakage and long-term reliability risk.

Does IMT40R015M2HXTMA1 require a negative gate voltage for reliable turn-off?

No. The device's gate threshold voltage (V_GS(th) = 3.5–5.6 V) and positive-only drive specification mean 0 V gate potential fully turns off the MOSFET. Negative gate bias is neither required nor recommended - the datasheet confirms stable operation with 0 V turn-off and no shoot-through risk under typical gate driver rise/fall times.

How is thermal performance validated for this TOLL-packaged SiC MOSFET?

Thermal resistance R_thJC = 0.44 °C/W is measured per JEDEC JESD51-14 on a standardized 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area for drain connection. This value is confirmed across production lots and correlates with real-world thermal imaging data showing <1.5 °C/W total junction-to-ambient in forced-air-cooled 1U server-style heatsinks.

Can IMT40R015M2HXTMA1 replace silicon MOSFETs in existing 400 V designs without layout changes?

Direct replacement is possible only if the PCB layout accommodates the PG-HSOF-8 (TOLL) footprint, which differs significantly from TO-220 or D²PAK. Key constraints include the exposed drain tab requiring dedicated large copper pour, multi-pin source routing, and tighter gate loop inductance control. Layout revision is strongly advised to realize full thermal and switching benefits.

IMT40R015M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 11.7A (Ta), 111A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 19.1mOhm @ 27.1A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 9.7mA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2730 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT40R015M2HXTMA1 FAQ

1.How can I place an order for IMT40R015M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT40R015M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT40R015M2HXTMA1 reliable?

The price and inventory of IMT40R015M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT40R015M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMT40R015M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT40R015M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT40R015M2HXTMA1?

IMT40R015M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT40R015M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT40R015M2HXTMA1?

For technical support, including IMT40R015M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT40R015M2HXTMA1 requirements.

6.How does Aetrix verify that IMT40R015M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMT40R015M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT40R015M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMT40R015M2HXTMA1?

All IMT40R015M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT40R015M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT40R015M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMT40R015M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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