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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT40R025M2HXTMA1

Name: IMT40R025M2HXTMA1
Brand: Infineon Technologies
SKU: IMT40R025M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT40R025M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT40R025M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT40R025M2HXTMA1 from Infineon is a 400 V, 25.4 mΩ typ. R_DS(on) SiC MOSFET in PG-HSOF-8 (TOLL) package, rated for 68 A continuous drain current at T_C = 25 °C and featuring 59 nC Q_oss, 4.2 μJ E_oss, and commutation-robust fast body diode. It serves as a high-efficiency power switch in hard-switched and synchronous rectification topologies for industrial SMPS and solar inverters.

For engineers reviewing the IMT40R025M2HXTMA1 datasheet, IMT40R025M2HXTMA1 pinout, IMT40R025M2HXTMA1 application, or IMT40R025M2HXTMA1 equivalent, key selection criteria include its 0.7 °C/W R_thJC, 4.5 V V_GS(th), 100% avalanche tested rating, and low temperature dependency of R_DS(on).

Technical Context

This CoolSiC™ G2 MOSFET employs silicon carbide technology to deliver superior switching performance over silicon counterparts, with gate charge total of 36 nC and Q_gd of 7.5 nC enabling high-frequency operation up to several hundred kHz. Its body diode exhibits t_fr = 13.6 ns (typ.) and Q_fr = 55 nC (typ.) at dI/dt = 1000 A/μs.

The device operates within a validated junction temperature range of –55 °C to +175 °C and supports gate drive voltages from 0 V to +18 V, with a benchmark V_GS(th) of 4.5 V (typ.). Thermal resistance from junction-to-case is 0.7 °C/W, optimized via copper clip interconnection in the TOLL package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage for 400 V bus applications like solar string inverters and UPS DC links.
R_DS(on), typ.	25.4 mΩ at V_GS = 18 V, I_D = 15.7 A, T_j = 25 °C - Enables low conduction loss in high-current, medium-voltage switches.
I_D, cont.	68 A at T_C = 25 °C - Supports high-power density designs without forced cooling in industrial SMPS.
Q_oss	59 nC - Low output charge reduces turn-off energy loss and improves efficiency in hard-switched converters.
E_oss	4.2 μJ - Energy stored in output capacitance directly impacts switching loss in resonant and hard-switched topologies.
R_thJC	0.7 °C/W - Enables high power dissipation (214 W at T_C = 25 °C) with minimal thermal bottleneck at the die-to-package interface.
V_GS(th)	4.5 V (typ.) - Well-defined threshold ensures robust noise immunity and predictable turn-on behavior in noisy industrial environments.

Pinout & Package

IMT40R025M2HXTMA1 uses the PG-HSOF-8 (TOLL) surface-mount package with exposed drain tab for enhanced thermal and electrical performance. The package features copper clip interconnection and is qualified per JEDEC for industrial applications.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Exposed copper pad providing lowest-inductance, highest-current path and primary thermal conduction path to PCB.
Pin 1 (Source)	Source reference node	Low-side return path for load current; used as gate drive reference in low-side configurations.
Pin 2 (Driver Source)	Kelvin source for gate driver	Separate Kelvin connection isolates gate loop from high di/dt source current, improving switching stability and reducing overshoot.
Pins 3–8 (Source)	Parallel source terminals	Multiple low-inductance source paths reduce common-source inductance and improve current sharing in high-frequency operation.
Pin (Gate)	Control input	Standard MOSFET gate terminal accepting 0–18 V drive; internal body diode anode tied to source.

Key Features

Feature	Design Value
Commutation-robust fast body diode	t_fr = 13.6 ns (typ.), Q_fr = 55 nC (typ.) - Enables reliable synchronous rectification without external Schottky diodes in LLC and phase-shifted full-bridge converters.
Low Q_oss and E_oss	59 nC / 4.2 μJ - Reduces turn-off loss and improves light-load efficiency in high-frequency SMPS above 200 kHz.
Copper clip interconnection (TOLL)	R_thJC = 0.7 °C/W - Delivers >3× better thermal performance than standard SO-8, supporting higher power density and longer lifetime.
100% avalanche tested	Single-pulse E_AS = 93 mJ - Guarantees ruggedness against inductive switching stress in motor drives and UPS systems.
JEDEC-qualified for industrial use	T_j = –55 °C to +175 °C - Validated for continuous operation in harsh environments including factory automation and outdoor solar installations.

Applications

Solar PV String Inverters

Industrial SMPS

Use Scenario: High-efficiency DC–AC conversion in 600–800 V string inverters operating at 100–250 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier MOSFET in interleaved boost or three-level NPC topologies.

Use Value: 25.4 mΩ R_DS(on) and low Q_oss enable >99% peak efficiency while maintaining thermal margin at 65 °C ambient.

Use Scenario: Output rectification and active clamp switching in telecom and server PSUs with 48 V or 54 V output rails.

IC Role / Device Role / Timing Role: Synchronous rectifier in forward or LLC resonant converters, replacing Schottky diodes.

Use Value: Fast body diode with low Q_fr eliminates reverse recovery loss and enables zero-voltage switching across wide load ranges.

Energy Storage Systems (ESS)

Class-D Audio Amplifiers

Use Scenario: Bi-directional DC–DC isolation stage in battery formation and grid-tied ESS with 400 V nominal bus.

IC Role / Device Role / Timing Role: Half-bridge switch in dual-active-bridge (DAB) topology handling bidirectional 5–10 kW power flow.

Use Value: Avalanche-rated construction and 175 °C T_j rating ensure reliability during frequent charge/discharge cycling and fault transients.

Use Scenario: Output H-bridge switching in high-fidelity, high-power (>500 W) audio amplifiers requiring low THD+N and wide bandwidth.

IC Role / Device Role / Timing Role: High-speed power switch in PWM-based Class-D output stage with >500 kHz carrier frequency.

Use Value: Low gate charge (36 nC) and fast switching (t_d(off) = 19.9 ns) minimize dead-time distortion and support >1 MHz modulation bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0021120K	R_DS(on) = 21 mΩ (typ.), V_DS = 1200 V, TO-247-4L package, Q_g = 32 nC	Higher voltage rating and larger package increase layout area and thermal mass; not drop-in compatible due to different footprint and pinout.	Select when 1200 V blocking is required or when TO-247 mechanical mounting is preferred over surface-mount TOLL.
ON Semiconductor NVHL040N048C	R_DS(on) = 48 mΩ (typ.), V_DS = 400 V, TOLL package, Q_g = 29 nC, lower current rating (40 A)	Higher R_DS(on) increases conduction loss; suitable only for lower-power (<3 kW) or cost-sensitive designs where thermal margin allows.	Select when BOM cost is prioritized over efficiency and power density, and system current stays below 40 A RMS.

Compared with C3M0021120K and NVHL040N048C, IMT40R025M2HXTMA1 delivers optimal balance of 400 V rating, 25.4 mΩ conduction loss, TOLL package thermal performance, and industrial qualification-making it ideal for space-constrained, high-efficiency 3–10 kW industrial and renewable energy systems.

Availability

IMT40R025M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, industrial SMPS, and energy storage systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IMT40R025M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ G2 family, designed specifically for high-efficiency, high-frequency power conversion in industrial, solar, and EV-charging applications where SiC's low switching loss and high-temperature capability provide decisive system-level advantages.

FAQ

What is the maximum recommended gate drive voltage for IMT40R025M2HXTMA1?

The absolute maximum gate-source voltage is 23 V (DC) and 25 V (transient, ≤500 ns, ≤1% duty cycle). Infineon recommends using 0 V to +18 V for reliable turn-on and turn-off, with +15 V to +18 V ensuring low R_DS(on) and robust noise immunity in industrial environments.

Does IMT40R025M2HXTMA1 require a negative gate voltage for turn-off?

No. The device is fully specified for 0 V turn-off and does not require negative gate bias. Its V_GS(th) of 4.5 V (typ.) and low gate leakage (<100 nA at V_GS = 20 V) ensure safe and stable off-state operation with grounded gate drive.

Can IMT40R025M2HXTMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) and Kelvin source configuration support current sharing. Parallel operation requires matched gate drive loops, symmetrical PCB layout, and individual gate resistors to manage dynamic imbalance; design guidelines are provided in Infineon Application Note AN2019-05.

Is the body diode suitable for synchronous rectification without external diodes?

Yes. The commutation-robust body diode has t_fr = 13.6 ns (typ.) and Q_fr = 55 nC (typ.) at dI/dt = 1000 A/μs, enabling reliable synchronous rectification in hard- and soft-switched topologies without additional Schottky diodes or complex control timing.

IMT40R025M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 32.1mOhm @ 15.7A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 5.6mA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT40R025M2HXTMA1 FAQ

1.How can I place an order for IMT40R025M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT40R025M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT40R025M2HXTMA1 reliable?

The price and inventory of IMT40R025M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT40R025M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMT40R025M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT40R025M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT40R025M2HXTMA1?

IMT40R025M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT40R025M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT40R025M2HXTMA1?

For technical support, including IMT40R025M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT40R025M2HXTMA1 requirements.

6.How does Aetrix verify that IMT40R025M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMT40R025M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT40R025M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMT40R025M2HXTMA1?

All IMT40R025M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT40R025M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT40R025M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMT40R025M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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