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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT40R036M2HXTMA1

Name: IMT40R036M2HXTMA1
Brand: Infineon Technologies
SKU: IMT40R036M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT40R036M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT40R036M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT40R036M2HXTMA1 from Infineon is a 400 V, 36.4 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 package, optimized for high-frequency switching and synchronous rectification in hard-switched and resonant topologies. It delivers 50 A continuous drain current at T_C = 25 °C, features a benchmark gate threshold voltage of 4.5 V (typ), and integrates a commutation-robust fast body diode with low Q_rr (39–77 nC) for reduced reverse recovery loss in bridge-leg configurations.

For engineers reviewing the IMT40R036M2HXTMA1 datasheet, IMT40R036M2HXTMA1 pinout, IMT40R036M2HXTMA1 application, or IMT40R036M2HXTMA1 equivalent, key selection criteria include its 0.9 °C/W junction-to-case thermal resistance, 26 nC total gate charge, 42 nC output charge, 3.0 μJ output energy, and validated avalanche ruggedness per JEDEC industrial qualification.

Technical Context

This CoolSiC™ G2 MOSFET employs trench-gate SiC technology with optimized cell layout to achieve low R_DS(on) × Q_g and R_DS(on) × Q_oss figures of merit. Its gate threshold voltage (V_GS(th) = 3.5–5.6 V) enables robust noise immunity while supporting standard 0–18 V gate drive.

The device integrates an intrinsic body diode with fast forward recovery (t_fr = 8.5–11.5 ns) and low reverse recovery charge, enabling reliable operation in synchronous rectification without external Schottky diodes. Thermal performance is enhanced by TOLL interconnection technology and a copper-tabbed PG-HSOF-8 package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage suitable for 380 V AC input systems and 400 V DC bus applications.
R_DS(on), typ	36.4 mΩ at V_GS = 18 V, I_D = 11.1 A, T_j = 25 °C - Enables low conduction loss in high-current power stages.
Q_g	26 nC - Low total gate charge reduces driver power requirement and switching loss in high-frequency designs.
E_oss	3.0 μJ - Low output energy minimizes turn-off loss and improves efficiency in hard-switched converters.
Q_oss	42 nC - Critical for ZVS/ZCS soft-switching design margin and snubber sizing.
R_thJC	0.9 °C/W - Enables high power density with efficient heat transfer to heatsink via exposed drain tab.
I_D, cont	50 A at T_C = 25 °C - Supports high-output-power SMPS and inverters without parallel devices.

Pinout & Package

IMT40R036M2HXTMA1 uses the PG-HSOF-8 (TOLL) package: thermally enhanced surface-mount outline with exposed copper drain tab on bottom side and 8-pin gull-wing leads. The package supports high-current routing and low-inductance layout via dedicated driver source pins.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Exposed copper thermal pad - primary heat path to PCB/heatsink; must be soldered to large copper area.
Pin 1 (Source)	Power source reference	Low-inductance source node for main current path; connects to power ground plane.
Pin 2 (Driver Source)	Gate driver return	Separate Kelvin source for gate loop - isolates gate drive return from high di/dt power return.
Pins 3–8	Parallel source connections	Multiple low-impedance source terminals reduce common-source inductance and improve switching stability.
Pin ? (Gate)	Control terminal	Gate signal input - routed with controlled impedance and minimal loop area to ensure clean switching.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 39–77 nC with t_fr = 8.5–11.5 ns - enables reliable synchronous rectification without external diodes in LLC and phase-shifted full-bridge.
TOLL interconnection technology	0.9 °C/W R_thJC - delivers superior thermal performance vs. standard SO-8, supporting >100 W/cm² power density.
JEDEC-qualified for industrial use	100% avalanche tested, T_j up to 175 °C - ensures long-term reliability in harsh ambient conditions.
Low gate charge profile	Q_g = 26 nC, Q_gd = 5.4 nC - reduces Miller effect and enables <20 ns switching transitions with moderate gate drivers.

Applications

Solar PV Inverters

Class-D Audio Amplifiers

Use Scenario: High-efficiency DC–AC conversion in string and microinverters operating at 400 V DC bus with >100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary switch in interleaved boost stage and H-bridge inverter leg; handles bidirectional current during MPPT and grid synchronization.

Use Value: Low Q_oss (42 nC) and E_oss (3.0 μJ) directly reduce turn-off loss, enabling >98.5% peak efficiency at 50 kW scale.

Use Scenario: Output stage switching in high-fidelity, high-power (>500 W) Class-D amplifiers requiring low THD+N and wide bandwidth.

IC Role / Device Role / Timing Role: Half-bridge power switch; conducts high di/dt current with minimal voltage overshoot during PWM edge transitions.

Use Value: Fast body diode (t_fr ≤ 11.5 ns) and low R_DS(on) (36.4 mΩ) suppress dead-time distortion and conduction loss, preserving audio fidelity.

Energy Storage Systems (ESS)

Motor Drives (Industrial)

Use Scenario: Bi-directional DC–DC conversion in battery formation and UPS systems with 400 V nominal bus and regenerative braking capability.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) topology; sustains reverse conduction during energy回馈.

Use Value: Robust body diode with low Q_rr (39–77 nC) eliminates need for external anti-parallel Si diodes, reducing BOM count and layout area.

Use Scenario: Inverter output stage in servo and variable-frequency drives for HVAC, pumps, and conveyors operating at 400 V AC input.

IC Role / Device Role / Timing Role: Phase-leg switch in three-phase inverter; withstands repetitive unclamped inductive switching (UIS) events during motor stall or overload.

Use Value: 100% avalanche tested to 66 mJ (single pulse) ensures fault tolerance during short-circuit transients without desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0032100K	R_DS(on) = 32 mΩ, V_DS = 1000 V, TO-247-3L package, higher Q_g (34 nC)	Higher voltage rating increases margin but adds cost and capacitance; unsuitable for 400 V-optimized designs	Select when system requires >600 V blocking or legacy through-hole assembly.
ROHM SCT3030KL	R_DS(on) = 30 mΩ, V_DS = 650 V, TO-263-7L package, lower R_thJC (0.75 °C/W)	Higher voltage grade and different thermal interface require board redesign; no driver source pin	Choose only if 650 V rating is mandatory and Kelvin source is not required for gate loop control.

Compared with C3M0032100K and SCT3030KL, IMT40R036M2HXTMA1 offers optimal balance of 400 V rating, low Q_g/Q_oss, integrated Kelvin source, and JEDEC industrial qualification-making it the preferred choice for cost-sensitive, high-frequency 400 V systems where layout simplicity and thermal predictability are critical.

Availability

IMT40R036M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, energy storage systems (ESS), and Class-D audio amplifiers requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for IMT40R036M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

The CoolSiC™ G2 series targets high-efficiency, high-frequency power conversion in industrial, renewable energy, and automotive applications-designed specifically to replace silicon MOSFETs and IGBTs in 400–650 V systems demanding low switching loss and rugged reliability.

FAQ

What is the maximum recommended gate drive voltage for IMT40R036M2HXTMA1?

The absolute maximum gate–source voltage is 25 V for transient conditions (≤500 ns, duty cycle ≤1%), and 23 V for static operation. Infineon recommends a gate drive range of 0 V to 18 V for reliable switching-18 V ensures full enhancement and low R_DS(on), while 0 V guarantees complete turn-off. Driving above 18 V provides diminishing R_DS(on) improvement but increases gate oxide stress risk.

Does IMT40R036M2HXTMA1 require a negative turn-off voltage?

No, IMT40R036M2HXTMA1 does not require negative turn-off voltage. Its gate threshold voltage (V_GS(th)) is 3.5–5.6 V, and the recommended turn-off voltage is 0 V. A 0 V gate drive fully depletes the channel under normal operating conditions. Negative voltage is unnecessary and may increase gate driver complexity without measurable benefit in most 400 V applications.

How is the "Driver Source" pin (Pin 2) used in layout?

Pin 2 is a Kelvin source connection dedicated solely to the gate driver return path. It must be routed separately from the main power source (Pin 1 and Pins 3–8) to avoid coupling high di/dt current into the gate loop. This isolation minimizes voltage spikes across the gate resistor and prevents false turn-on due to source inductance-critical for stable operation above 100 kHz.

Is IMT40R036M2HXTMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low Q_oss (42 nC) and E_oss (3.0 μJ) enable efficient ZVS operation in LLC resonant converters and phase-shifted full-bridge topologies. The fast, low-charge body diode supports reliable soft-commutation during reverse conduction, and the 0.9 °C/W R_thJC ensures thermal stability under high-frequency ZVS stress where conduction and switching losses are both significant.

IMT40R036M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 45.7mOhm @ 11.1A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1170 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT40R036M2HXTMA1 FAQ

1.How can I place an order for IMT40R036M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT40R036M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT40R036M2HXTMA1 reliable?

The price and inventory of IMT40R036M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT40R036M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMT40R036M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT40R036M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT40R036M2HXTMA1?

IMT40R036M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT40R036M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT40R036M2HXTMA1?

For technical support, including IMT40R036M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT40R036M2HXTMA1 requirements.

6.How does Aetrix verify that IMT40R036M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMT40R036M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT40R036M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMT40R036M2HXTMA1?

All IMT40R036M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT40R036M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT40R036M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMT40R036M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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