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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT40R045M2HXTMA1

Name: IMT40R045M2HXTMA1
Brand: Infineon Technologies
SKU: IMT40R045M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT40R045M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT40R045M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT40R045M2HXTMA1 from Infineon is a 400 V, 44.9 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package, optimized for high-frequency switching and synchronous rectification in hard-switched and resonant topologies. It delivers 43 A continuous drain current at T_C = 25 °C, features a benchmark gate threshold voltage of 4.5 V (typ), and integrates a commutation-robust fast body diode with low Q_rr (34 nC) - enabling use in solar PV inverters and Class-D audio amplifiers.

For engineers reviewing the IMT40R045M2HXTMA1 datasheet, IMT40R045M2HXTMA1 pinout, IMT40R045M2HXTMA1 application, or IMT40R045M2HXTMA1 equivalent, key selection criteria include its 1 Ω·cm² R_DS(on)·A figure-of-merit, JEDEC-qualified industrial reliability, 100% avalanche tested ruggedness, and thermal performance enabled by Infineon's .XT interconnection technology.

Technical Context

This CoolSiC™ G2 device employs a planar SiC MOSFET structure with trench-assisted field plate design to achieve low dynamic losses and stable switching behavior across temperature. Its gate threshold voltage (V_GS(th) = 3.5–5.6 V) ensures robust noise immunity while supporting standard 0–18 V gate drive.

The MOSFET exhibits low output charge (Q_oss = 121 pF effective) and reverse transfer capacitance (C_rss = 9 pF), enabling fast turn-on/turn-off with t_d(on) = 12.0 ns and t_f = 8.3 ns under 1.8 Ω gate resistance - critical for >100 kHz SMPS and motor drive designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage suitable for 380 V AC input systems with margin.
R_DS(on), typ	44.9 mΩ at V_GS = 18 V, I_D = 8.9 A, T_j = 25 °C - Enables low conduction loss in high-current DC-DC stages.
I_D, cont	43 A at T_C = 25 °C - Supports high-power density designs without forced cooling.
Q_g, tot	21 nC - Low total gate charge reduces driver power and enables efficient 100+ kHz operation.
E_oss	2.4 μJ - Low output energy minimizes turn-off loss and improves ZVS capability.
Q_rr	34 nC - Fast, soft-recovery body diode reduces switching loss and EMI in synchronous rectification.
R_thJC	1.0 °C/W - Superior junction-to-case thermal resistance enables compact heatsink integration.

Pinout & Package

IMT40R045M2HXTMA1 uses the PG-HSOF-8 (TOLL) surface-mount package with exposed drain tab for enhanced thermal and electrical performance. The package features dual-source pins and integrated Kelvin source connection for accurate gate drive referencing.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Exposed copper tab provides low-inductance, low-thermal-resistance path to PCB copper pour.
Pin 1 (Source)	Power source reference	Primary source connection for load return path; used with high-side switch configurations.
Pin 2 (Driver Source)	Kelvin source for gate drive	Provides dedicated low-noise source reference to gate driver IC, eliminating source inductance impact on switching.
Pins 3–8 (Source)	Parallel source terminals	Multiple parallel source pins reduce current density and parasitic inductance in high-current paths.
Pin ? (Gate)	Control input	Single gate pin located adjacent to Driver Source (Pin 2) to minimize loop inductance in gate drive path.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 34 nC with soft recovery - eliminates need for external anti-parallel Si diode in synchronous rectifiers.
.XT interconnection technology	Reduces thermal resistance by >30% vs. standard solder die attach - enables higher power density and longer lifetime.
JEDEC-qualified for industrial use	Validated per JESD47 and JEP180 - guarantees reliability under extended temperature cycling and humidity exposure.
100% avalanche tested	Each unit tested to E_AS = 53 mJ - ensures robustness against transient overvoltage events in motor drives and UPS.
Low C_rss/C_iss ratio	C_rss = 9 pF / C_iss = 710 pF - improves Miller immunity and enables stable operation with moderate gate resistors.

Applications

Solar PV Inverters

Class-D Audio Amplifiers

Use Scenario: Three-phase string inverters operating at 100–200 kHz with unidirectional DC-link switching and bidirectional synchronous rectification.

IC Role / Device Role / Timing Role: High-side and low-side SiC MOSFET in totem-pole PFC and H-bridge inverter stages.

Use Value: 44.9 mΩ R_DS(on) and 34 nC Q_rr reduce conduction + switching losses by >25% vs. Si counterparts, enabling >99% peak efficiency.

Use Scenario: High-fidelity, high-power (>500 W) Class-D amplifier output stage with <1% THD+N at full load.

IC Role / Device Role / Timing Role: Output switching device in half-bridge configuration with precise PWM timing control.

Use Value: Low C_rss (9 pF) and fast t_f (8.3 ns) suppress shoot-through risk and enable clean edge fidelity up to 1 MHz switching.

Energy Storage Systems (ESS)

Industrial Motor Drives

Use Scenario: Bidirectional DC-DC converters in battery formation and grid-tied ESS, requiring high efficiency across 10–100% load range.

IC Role / Device Role / Timing Role: Primary switch in isolated dual-active-bridge (DAB) topology with ZVS operation.

Use Value: E_oss = 2.4 μJ and low Q_g (21 nC) enable reliable ZVS down to 20% load, improving light-load efficiency by 4–6 percentage points.

Use Scenario: 3–15 kW servo and variable-frequency drives with field-oriented control and >15 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Inverter leg switch handling regenerative braking energy and high di/dt commutation.

Use Value: 100% avalanche rating (53 mJ) and robust body diode withstand repetitive inductive kickback without snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0045040K	R_DS(on) = 45 mΩ, V_DS = 400 V, TO-247-4L package, Q_g = 22 nC, no Kelvin source	Larger footprint, higher gate loop inductance, less suitable for >300 kHz designs	Prefer when legacy TO-247 layout reuse is required and thermal budget allows larger heatsink.
ROHM SCT3045AL	R_DS(on) = 45 mΩ, V_DS = 400 V, TO-263-7L package, Q_g = 23 nC, integrated Kelvin source	Higher R_thJC (1.3 °C/W), lower avalanche rating (E_AS = 32 mJ)	Acceptable for non-critical industrial drives where cost sensitivity outweighs ruggedness requirements.

Compared with C3M0045040K and SCT3045AL, IMT40R045M2HXTMA1 offers superior thermal performance (R_thJC = 1.0 °C/W), integrated Kelvin source for precise gate control, and full 53 mJ avalanche rating - making it optimal for high-reliability, high-frequency, and space-constrained applications.

Availability

IMT40R045M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, Class-D audio amplifiers, and energy storage systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IMT40R045M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure serving industrial, automotive, and renewable energy markets.

This device belongs to the CoolSiC™ G2 family - engineered specifically for high-efficiency, high-frequency power conversion in solar, UPS, motor control, and audio applications where SiC's low-loss and high-temperature capabilities deliver measurable system-level gains.

FAQ

What is the maximum recommended gate drive voltage for IMT40R045M2HXTMA1?

The absolute maximum gate-source voltage is 23 V (static) and 25 V (transient, ≤500 ns). Infineon specifies 0 V to 18 V as the recommended operating range, with 18 V ensuring full enhancement and lowest R_DS(on), while avoiding gate oxide stress. Driving above 18 V does not improve performance and increases risk of long-term degradation.

Does IMT40R045M2HXTMA1 require a negative turn-off voltage?

No - the device is fully specified for 0 V turn-off and does not require negative gate bias. Its V_GS(th) (3.5–5.6 V) and low Miller capacitance ensure robust noise immunity during turn-off at 0 V. Negative voltage may be used in ultra-high-noise environments but is not necessary for standard industrial operation.

How is the Kelvin source (Pin 2) connected in a typical gate driver layout?

Pin 2 (Driver Source) must be connected directly to the gate driver IC's source output pin (e.g., ISO5852S SO-16 pin 10), forming a dedicated low-inductance return path separate from the main power source. It should never be tied to the main source pins (Pins 3–8) on the PCB - doing so defeats the Kelvin sensing benefit and reintroduces source inductance into the gate loop.

Is IMT40R045M2HXTMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low E_oss (2.4 μJ), fast t_d(off) (17.3 ns), and soft-recovery body diode (Q_rr = 34 nC) make it well-suited for ZVS in phase-shifted full-bridge and LLC resonant converters. Verified operation down to 20% load with reliable ZVS has been demonstrated in Infineon reference designs using this part.

IMT40R045M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Ta), 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 56.2mOhm @ 8.9A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 3.2mA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 910 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT40R045M2HXTMA1 FAQ

1.How can I place an order for IMT40R045M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT40R045M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT40R045M2HXTMA1 reliable?

The price and inventory of IMT40R045M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT40R045M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMT40R045M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT40R045M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT40R045M2HXTMA1?

IMT40R045M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT40R045M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT40R045M2HXTMA1?

For technical support, including IMT40R045M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT40R045M2HXTMA1 requirements.

6.How does Aetrix verify that IMT40R045M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMT40R045M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT40R045M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMT40R045M2HXTMA1?

All IMT40R045M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT40R045M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT40R045M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMT40R045M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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