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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R048M1HXUMA1

Name: IMT65R048M1HXUMA1
Brand: Infineon Technologies
SKU: IMT65R048M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R048M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT65R048M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT65R048M1HXUMA1 from Infineon is a 650 V, 48 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, rated for 99 A peak drain current and 175 °C maximum junction temperature. It delivers low switching losses via separated driver and power source terminals, features robust body diode commutation (Q_fr = 82 nC), and supports hard-switched topologies including solar inverters and EV chargers.

For engineers reviewing the IMT65R048M1HXUMA1 datasheet, IMT65R048M1HXUMA1 pinout, IMT65R048M1HXUMA1 application, or IMT65R048M1HXUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, dv/dt ruggedness (200 V/ns), gate oxide reliability at 23 V max, and Kelvin-source-enabled reduction of common-source inductance in high-frequency power stages.

Technical Context

This CoolSiC™ M1-generation device uses trench-gate SiC technology optimized for high-efficiency, high-temperature operation. Its dual-source pinout isolates gate drive return from power return to minimize dynamic R_DS(on) rise and voltage overshoot during fast switching.

The MOSFET exhibits low output charge (Q_oss = 78 nC @ 400 V), low reverse transfer capacitance (C_rss = 12.5 pF), and commutation-robust body diode with t_fr = 20.1 ns and Q_frm = 82 nC - enabling reliable zero-voltage switching (ZVS) and hard-reverse recovery in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - blocking voltage rating suitable for 400–600 V DC bus systems in industrial and renewable energy applications
R_DS(on),typ	48 mΩ @ V_GS = 18 V, T_j = 25 °C - enables high-current conduction with low conduction loss in compact thermal designs
I_D,pulse	99 A - peak pulsed drain current supports short-duration overload conditions without derating
Q_G,total	33 nC @ V_DD = 400 V - total gate charge determines driver strength requirement and switching speed control
T_j,max	175 °C - extended junction temperature rating allows operation in high-ambient environments without forced cooling
dv/dt ruggedness	200 V/ns - immunity to parasitic turn-on ensures stable operation in high-dI/dt, high-frequency hard-switching circuits
C_rss	12.5 pF @ V_DS = 400 V - low reverse transfer capacitance reduces Miller effect and improves gate drive efficiency

Pinout & Package

Package: PG-HSOF-8 (TOLL) - thermally enhanced surface-mount package with exposed drain tab for low thermal resistance (R_th(j–c) = 0.66 °C/W) and high-power density mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Primary heat path and high-current return; soldered directly to PCB copper pour for thermal management
Pin 1	Gate	Control terminal for MOSFET channel activation; requires low-inductance gate loop layout
Pin 2	Driver Source (Kelvin)	Gate drive return path only - isolated from power current to eliminate common-source inductance impact on switching
Pins 3–8	Power Source	High-current source return path; carries full load current and connects to system ground/power rail

Key Features

Feature	Design Value
Kelvin source configuration	Separates gate drive return from power return, reducing dynamic R_DS(on) rise by up to 4× and enabling faster, cleaner switching transitions
Commutation-robust body diode	Q_fr = 82 nC and t_fr = 20.1 ns support reliable hard-reverse recovery in PFC and inverter legs without external anti-parallel diodes
Enhanced gate oxide reliability	Rated for V_GS up to 23 V static and 25 V transient - enables robust gate drive design with margin against overshoot
Low effective output capacitance	C_oss,er = 146 pF - minimizes energy loss during turn-off and improves ZVS capability in resonant topologies
JEDEC-qualified for industrial use	Validated per JESD47/22 standards for lifetime reliability under continuous thermal cycling and high-temperature bias stress

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase string or central inverters converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side and low-side switching element in NPC or T-type three-level topologies operating at 50–100 kHz.

Use Value: Enables >99% conversion efficiency at 175 °C junction temperature while maintaining dv/dt immunity during rapid voltage transitions across transformerless designs.

Use Scenario: Secondary-side DC–DC stage in 150–350 kW charging modules delivering 200–1000 V output.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge converter handling 40–100 kHz switching with ZVS.

Use Value: Low Q_oss and C_rss reduce dead-time losses and improve soft-switching window, increasing power density by 25% versus silicon IGBTs.

Industrial UPS Systems

Energy Storage Bidirectional Converters

Use Scenario: Online double-conversion UPS units providing clean 50/60 Hz AC output during grid outages.

IC Role / Device Role / Timing Role: Inverter leg switch in high-efficiency 16–32 kHz PWM inverters with active harmonic filtering.

Use Value: Stable R_DS(on) over temperature and low gate charge allow consistent THD <3% and >98.5% efficiency across 0–40 °C ambient range.

Use Scenario: Grid-tied battery storage systems performing bidirectional AC/DC and DC/DC conversion for peak shaving and frequency regulation.

IC Role / Device Role / Timing Role: Isolated DC–DC switch in dual-active-bridge (DAB) topology operating at 100–300 kHz.

Use Value: Robust body diode enables synchronous rectification in reverse direction without shoot-through risk, improving round-trip efficiency by 1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0048065K	R_DS(on),typ = 48 mΩ, same V_DS, but TO-247-4L package with different thermal interface and pinout	Lacks Kelvin source; higher common-source inductance limits achievable switching speed in >100 kHz designs	Preferred where mechanical compatibility with legacy TO-247 heatsinks is required and switching frequency ≤65 kHz
ROHM SCT3048KL	R_DS(on),typ = 48 mΩ, 650 V, but no Kelvin source and higher Q_G (42 nC) and C_rss (18 pF)	Lower dv/dt ruggedness (150 V/ns); less tolerant of layout-induced noise in high-dI/dt applications	Selected when cost sensitivity outweighs need for ultra-low switching loss and highest reliability in mission-critical infrastructure

Compared with C3M0048065K and SCT3048KL, IMT65R048M1HXUMA1 provides superior switching fidelity through its Kelvin source architecture and lower C_rss, making it optimal for high-frequency, high-reliability applications where layout parasitics must be tightly controlled.

Availability

IMT65R048M1HXUMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging stations, and industrial uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IMT65R048M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in demanding applications such as solar inverters, EV charging, and industrial motor drives - emphasizing ruggedness, thermal resilience, and ease of integration into next-generation SiC-based platforms.

FAQ

What is the purpose of the separate Driver Source (Pin 2) and Power Source (Pins 3–8) terminals?

The Driver Source (Pin 2) serves exclusively as the gate drive return path, eliminating common-source inductance that would otherwise cause dynamic R_DS(on) increase and oscillation during fast switching. Power Source (Pins 3–8) carries full load current and connects to the main system ground or power rail. This Kelvin configuration ensures accurate gate voltage control independent of power loop transients.

Can IMT65R048M1HXUMA1 replace silicon IGBTs in existing 650 V designs without layout changes?

No - direct replacement requires PCB redesign due to its TOLL package footprint, Kelvin source pinout, and different thermal mounting requirements. While electrical ratings align with many 650 V IGBTs, the gate drive dynamics, reduced snubber needs, and thermal interface differ significantly. Layout optimization for low-inductance gate loops and enhanced drain-side copper is essential to realize its full performance benefit.

What is the maximum recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with V_DD = 400 V and I_D = 20 A, a gate resistor of 2.2 Ω to 4.7 Ω is recommended to balance switching loss (t_d(on) ≈ 6.7 ns, t_r ≈ 9.6 ns) and EMI control. Lower values may cause ringing due to interaction with PCB inductance; higher values increase switching losses disproportionately given the device's low Q_G (33 nC) and R_G,int (6.0 Ω).

Does the body diode support continuous bidirectional conduction in a bidirectional DAB converter?

Yes - the body diode is fully rated for continuous reverse conduction with I_SDC = 30 A at T_c = 25 °C and exhibits low forward voltage (V_SD ≈ 4.0 V) and fast recovery (t_fr = 20.1 ns). Its Q_frm = 82 nC and robust avalanche rating (E_AS = 171 mJ) enable reliable synchronous rectification in both directions without external diodes, provided gate timing avoids shoot-through.

IMT65R048M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT65R048M1HXUMA1 FAQ

1.How can I place an order for IMT65R048M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R048M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R048M1HXUMA1 reliable?

The price and inventory of IMT65R048M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R048M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R048M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R048M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R048M1HXUMA1?

IMT65R048M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R048M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R048M1HXUMA1?

For technical support, including IMT65R048M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R048M1HXUMA1 requirements.

6.How does Aetrix verify that IMT65R048M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R048M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R048M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R048M1HXUMA1?

All IMT65R048M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R048M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R048M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMT65R048M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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