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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R057M1HXUMA1

Name: IMT65R057M1HXUMA1
Brand: Infineon Technologies
SKU: IMT65R057M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R057M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT65R057M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT65R057M1HXUMA1 from Infineon is a 650 V, 57 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, rated for 84 A peak drain current and optimized for high-efficiency hard-switching topologies such as solar inverters and EV charging systems.

For engineers reviewing the IMT65R057M1HXUMA1 datasheet, IMT65R057M1HXUMA1 pinout, IMT65R057M1HXUMA1 application, or IMT65R057M1HXUMA1 equivalent, key selection criteria include R_DS(on) at 175 °C, Q_G = 28 nC, E_oss = 9.8 μJ at 400 V, commutation-robust body diode, and Kelvin source-enabled low switching loss.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to deliver wide-bandgap advantages: 650 V blocking capability, 175 °C maximum junction temperature, and intrinsic fast-recovery body diode with Q_fr = 69 nC and t_fr = 19.4 ns.

Its PG-HSOF-8 package integrates a dedicated Kelvin source terminal (Pin 2) separate from power source (Pins 3–8), enabling gate drive loop decoupling and reducing dynamic R_DS(on) overshoot during turn-on/turn-off transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum DC blocking voltage for industrial and EV charging applications up to 1000 V DC bus.
R_DS(on),typ	57 mΩ @ V_GS = 18 V, T_j = 25 °C - Enables low conduction loss in 3–10 kW power stages.
I_D,pulse	84 A - Peak pulsed drain current supporting short-duration overload conditions without thermal runaway.
Q_G	28 nC @ V_DS = 400 V - Low total gate charge reduces driver power requirement and enables >100 kHz switching.
E_oss	9.8 μJ @ V_DS = 400 V - Energy-related output capacitance supports zero-voltage switching (ZVS) design in resonant converters.
t_fr	19.4 ns - Fast forward recovery time of internal body diode minimizes reverse recovery losses in totem-pole PFC.
R_th(j-c)	0.74 °C/W - Low junction-to-case thermal resistance enables direct heatsink mounting for high-power density layouts.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, thermally enhanced with exposed drain tab. Dimensions: 9.5 mm × 8.5 mm × 1.8 mm. Drain tab is electrically connected to Pin 1 (Drain) and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain Tab)	Main Drain Terminal	High-current drain connection and primary thermal interface; soldered directly to PCB copper pour or heatsink.
Pin 2	Kelvin Source	Dedicated low-inductance return path for gate driver to eliminate source inductance effects on switching waveform fidelity.
Pins 3–8	Power Source	Parallel-connected source terminals carrying full load current; must not be interchanged with Pin 2.
-	Gate	Connected via external trace to gate driver; requires <1.8 Ω gate resistor for specified dV/dt control per datasheet test condition.

Key Features

Feature	Design Value
Kelvin source configuration	Enables precise gate control by eliminating source inductance impact on V_GS, reducing switching losses up to 4× vs. standard 3-pin packages.
Commutation-robust body diode	Q_fr = 69 nC and t_fr = 19.4 ns support reliable hard-commutation in totem-pole PFC without external SiC diodes.
JEDEC-qualified for industrial use	Validated per JESD47 and JEP180 for continuous operation at T_j,max = 175 °C in harsh environments.
Low E_oss and C_oss	E_oss = 9.8 μJ and C_oss,er = 122 pF enable efficient ZVS operation in LLC and phase-shifted full-bridge topologies.
Gate oxide reliability	Guaranteed stable V_GS(th) and R_DS(on) over lifetime under recommended V_GS range (0–20 V).

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase string or central inverter operating at 1000 V DC input with 17–22 kHz PWM switching.

IC Role / Device Role / Timing Role: High-side and low-side switching device in NPC or T-type three-level topology.

Use Value: 57 mΩ R_DS(on) and 9.8 μJ E_oss reduce conduction + switching losses, enabling >99% peak efficiency at 50 kW.

Use Scenario: 150–350 kW liquid-cooled charging module with bidirectional AC/DC and DC/DC stages.

IC Role / Device Role / Timing Role: Primary switch in isolated dual-active-bridge (DAB) converter handling 1000 V DC link.

Use Value: 175 °C T_j,max and 0.74 °C/W R_th(j-c) sustain high power density without derating in compact chassis.

Industrial UPS Systems

Energy Storage Bidirectional Converters

Use Scenario: Online double-conversion UPS with 400 V AC input and 800 V DC bus, requiring >98% efficiency and <10 ms transfer time.

IC Role / Device Role / Timing Role: IGBT replacement in three-phase inverter stage for improved efficiency and thermal margin.

Use Value: 84 A peak current rating and robust avalanche capability (E_AS = 142 mJ) ensure fault tolerance during grid transients.

Use Scenario: Grid-tied battery energy storage system (BESS) with 1500 V DC stack and 500 kW bi-directional power flow.

IC Role / Device Role / Timing Role: Main switching element in interleaved buck-boost or dual-active-bridge architecture.

Use Value: Commutation-robust body diode eliminates need for anti-parallel SiC diodes, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	R_DS(on) = 65 mΩ (higher), no Kelvin source, TO-247-4L package	Limited to lower-frequency hard-switching due to higher gate charge (Q_G = 34 nC) and absence of Kelvin sensing	Select when cost sensitivity outweighs switching loss optimization and board space allows larger through-hole footprint.
STW65N65FD2	650 V Si IGBT with co-packaged diode, R_CE(sat) = 65 mΩ, no SiC benefits	Higher conduction loss above 10 kHz; unsuitable for ZVS or high-temperature operation beyond 150 °C	Select only for legacy designs where gate drive compatibility with existing IGBT drivers is mandatory.

Compared with C3M0065065K and STW65N65FD2, IMT65R057M1HXUMA1 delivers superior high-frequency efficiency, tighter thermal management via Kelvin source, and proven ruggedness in continuous hard-commutation - critical for next-generation 175 °C-rated power systems.

Availability

IMT65R057M1HXUMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IMT65R057M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ M1 family - engineered specifically for high-efficiency, high-reliability 650 V SiC power conversion in demanding industrial and grid-connected applications.

FAQ

What is the maximum allowable gate-source voltage for continuous operation?

The maximum continuous gate-source voltage is 20 V, with transient peaks up to 25 V permitted for ≤1% duty cycle. Exceeding 20 V continuously accelerates gate oxide degradation and may cause premature R_DS(on) drift. Infineon specifies V_GS = 18 V as the recommended turn-on voltage for optimal performance and lifetime.

Can Pin 2 (Kelvin source) be connected to the same node as Pins 3–8 (power source)?

No - Pin 2 and Pins 3–8 serve distinct functions and must not be shorted or interchanged. Pin 2 is a dedicated low-current Kelvin sense path for gate driver feedback; connecting it to power source nodes introduces measurement error and defeats the purpose of source inductance cancellation, leading to oscillatory switching waveforms and increased losses.

Is this device qualified for automotive applications?

No - IMT65R057M1HXUMA1 is fully qualified per JEDEC standards for industrial applications only (AEC-Q101 not claimed). It lacks automotive-specific stress testing, failure mode analysis, and PPAP documentation required for automotive ECUs or traction inverters.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_c = 100 °C, the SOA is limited by both thermal and avalanche constraints: maximum DC current drops to ~31 A (per Table 2), and pulse current remains 84 A only for ≤100 µs. The device's SOA curve (Figure 2) shows that at V_DS = 400 V, the maximum sustainable I_D is 42 A for 1 ms pulses - verified by Infineon's published SOA diagrams in Revision 2.3 datasheet.

IMT65R057M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT65R057M1HXUMA1 FAQ

1.How can I place an order for IMT65R057M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R057M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R057M1HXUMA1 reliable?

The price and inventory of IMT65R057M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R057M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R057M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R057M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R057M1HXUMA1?

IMT65R057M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R057M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R057M1HXUMA1?

For technical support, including IMT65R057M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R057M1HXUMA1 requirements.

6.How does Aetrix verify that IMT65R057M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R057M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R057M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R057M1HXUMA1?

All IMT65R057M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R057M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R057M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMT65R057M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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