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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R072M1HXUMA1

Name: IMT65R072M1HXUMA1
Brand: Infineon Technologies
SKU: IMT65R072M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R072M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT65R072M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT65R072M1HXUMA1 from Infineon is a 650 V, 72 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, rated for 36 A continuous drain current at 25 °C and 175 °C junction temperature, optimized for high-efficiency SMPS, solar inverters, and EV charging infrastructure.

For engineers reviewing the IMT65R072M1HXUMA1 datasheet, IMT65R072M1HXUMA1 pinout, IMT65R072M1HXUMA1 application, or IMT65R072M1HXUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, Q_G = 22 nC at 400 V, E_oss = 7.8 μJ, commutation-robust body diode (t_fr = 18.7 ns), and Kelvin source-enabled low switching loss.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to deliver wide-bandgap advantages: 650 V blocking capability with low R_DS(on) drift over temperature, V_GS(th) = 4.5 V (typ), and gate oxide qualified to 175 °C junction operation. Its Kelvin source architecture separates power and signal return paths to minimize gate loop inductance.

The device features a fast, soft-recovery body diode (Q_rr = 60 nC, t_fr = 18.7 ns) and robust dv/dt immunity up to 200 V/ns, enabling reliable hard-switching in totem-pole PFC and bidirectional DC-DC topologies without external SiC Schottky anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 800 V DC-link systems with 20% margin
R_DS(on), typ	72 mΩ at V_GS = 18 V, T_j = 25 °C - Enables <1.2 W conduction loss at 36 A
Q_G	22 nC at V_DS = 400 V - Low gate charge supports >1 MHz switching with standard gate drivers
E_oss	7.8 μJ at V_DS = 400 V - Energy-related output capacitance enables ZVS down to 100 kHz in resonant converters
t_fr	18.7 ns - Fast forward recovery time reduces turn-on losses in synchronous rectification
T_j,max	175 °C - Extended thermal rating allows derated operation in compact heatsink designs
R_th(j–c)	0.86 °C/W - Low junction-to-case thermal resistance supports >150 W power dissipation with minimal thermal interface resistance

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, thermally enhanced with exposed drain tab on bottom side. Pin 1 = Gate, Pin 2 = Kelvin Source, Pins 3–8 = Power Source (commoned internally), Drain tab = Power Drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Low-inductance, high-current path; soldered directly to PCB copper pour for thermal and electrical performance
Pin 1	Gate	Standard gate drive input; referenced to Kelvin Source (Pin 2), not power source
Pin 2	Kelvin Source	Reference node for gate driver feedback; eliminates source inductance impact on switching waveform fidelity
Pins 3–8	Power Source	Parallel low-inductance source return for main current path; must be connected together externally

Key Features

Feature	Design Value
Kelvin source configuration	Enables precise gate control by eliminating source inductance-induced voltage spikes during switching transitions
Commutation-robust body diode	Soft reverse recovery (Q_rr = 60 nC, t_fr = 18.7 ns) prevents voltage overshoot and oscillation in hard-commutated totem-pole PFC
JEDEC-qualified for industrial use	Validated per JESD47/22 standards for 175 °C continuous operation and long-term reliability in harsh environments
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~20% from 25 °C to 175 °C - simplifies thermal design and improves current sharing in paralleled configurations
200 V/ns dv/dt immunity	Ensures stable gate bias under fast transient conditions without false turn-on in high-di/dt applications

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase, two-level or NPC inverter stage converting 1000 V DC bus to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/SiC hybrid or full-SiC inverter legs operating at 50–100 kHz.

Use Value: 72 mΩ R_DS(on) and 7.8 μJ E_oss reduce conduction + switching losses by >35% vs. comparable 650 V Si MOSFETs, enabling >99% peak efficiency.

Use Scenario: Isolated DC-DC stage in 150–1000 kW charging stations, stepping down 1000 V battery voltage to 400–800 V output.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or dual-active-bridge topology operating at 100–300 kHz.

Use Value: Kelvin source and 22 nC Q_G allow clean 200+ kHz ZVS transitions with minimal gate drive loss, reducing thermal stress on magnetics and capacitors.

Industrial UPS Systems

High-Frequency Class D Amplifiers

Use Scenario: Online double-conversion UPS delivering clean 230 V/50 Hz output from rectified AC or battery backup.

IC Role / Device Role / Timing Role: Bidirectional switch in high-frequency inverter stage supporting seamless transfer between utility and battery modes.

Use Value: Robust body diode (t_fr = 18.7 ns) and 114 mJ single-pulse avalanche energy ensure reliable reverse conduction during mode transitions without snubbers.

Use Scenario: Output stage of professional audio amplifiers requiring >100 kHz PWM carrier frequency and low THD+N.

IC Role / Device Role / Timing Role: Half-bridge power switch driving reactive loudspeaker loads with tight dead-time control.

Use Value: 200 V/ns dv/dt immunity and low Q_GD/Q_GS ratio enable precise dead-time management and reduced shoot-through risk at >500 kHz effective switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0075120K	R_DS(on) = 75 mΩ (typ), same 1200 V rating but higher voltage grade; no Kelvin source	Lacks Kelvin source - requires careful layout to mitigate gate ringing in high-di/dt circuits	Select when 1200 V margin is required and gate drive loop inductance can be minimized via layout
STP65N6F7	650 V Si superjunction MOSFET, R_DS(on) = 65 mΩ (typ), but T_j,max = 150 °C and E_oss ≈ 3× higher	Higher switching loss and thermal limitation restrict usable frequency to ≤65 kHz in high-power designs	Select only for cost-sensitive, lower-frequency (<50 kHz), non-175 °C applications where SiC ROI is not justified

Compared with C3M0075120K and STP65N6F7, IMT65R072M1HXUMA1 delivers superior thermal capability (175 °C), lower E_oss, and Kelvin-source-enabled gate control-making it optimal for high-density, high-frequency, and high-reliability industrial power conversion where layout constraints and thermal headroom are critical.

Availability

IMT65R072M1HXUMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for IMT65R072M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ M1 generation of trench-based SiC MOSFETs, designed specifically for high-efficiency, high-power-density industrial and renewable energy systems operating up to 175 °C junction temperature.

FAQ

What is the purpose of the Kelvin source (Pin 2) on IMT65R072M1HXUMA1?

The Kelvin source provides a dedicated low-current reference path for the gate driver's source terminal, decoupling gate control from high di/dt power source currents. This eliminates voltage drop across source inductance during switching, preventing gate underdrive and ensuring consistent turn-on/turn-off timing and reduced switching losses.

Can IMT65R072M1HXUMA1 replace silicon IGBTs in existing 650 V designs?

Yes, but gate drive and layout must be updated: it requires 18 V turn-on (not 15 V), benefits from negative turn-off voltage (0 V recommended), and demands Kelvin source routing. Its lower Q_G and E_oss enable higher frequency operation, but snubberless hard-switching requires validation of dv/dt stress and body diode commutation behavior.

Is the body diode suitable for synchronous rectification without an external Schottky diode?

Yes-the integrated body diode is characterized for soft, fast reverse recovery (t_fr = 18.7 ns, Q_rr = 60 nC) and rated for continuous reverse conduction up to 36 A at 25 °C. It eliminates need for external anti-parallel diodes in most totem-pole PFC and bidirectional DC-DC applications when operated within SOA limits.

What thermal interface material is recommended for the drain tab?

Infineon recommends soldering the exposed drain tab directly to a 2–3 oz copper thermal pad using lead-free reflow (peak 260 °C, MSL2). For bolt-down modules or forced-air cooling, use thermally conductive epoxy (e.g., Henkel Ablestik 5571) or phase-change pads (e.g., Laird Tpcm 580) with <0.15 °C·in²/W interface resistance to maintain R_th(j–c) ≤ 0.86 °C/W.

IMT65R072M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT65R072M1HXUMA1 FAQ

1.How can I place an order for IMT65R072M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R072M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R072M1HXUMA1 reliable?

The price and inventory of IMT65R072M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R072M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R072M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R072M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R072M1HXUMA1?

IMT65R072M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R072M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R072M1HXUMA1?

For technical support, including IMT65R072M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R072M1HXUMA1 requirements.

6.How does Aetrix verify that IMT65R072M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R072M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R072M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R072M1HXUMA1?

All IMT65R072M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R072M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R072M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMT65R072M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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