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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R083M1HXUMA1

Name: IMT65R083M1HXUMA1
Brand: Infineon Technologies
SKU: IMT65R083M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R083M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT65R083M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT65R083M1HXUMA1 from Infineon is a 650 V, 83 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, rated for 32 A continuous drain current at 25 °C and 175 °C junction temperature, optimized for high-efficiency hard-switching topologies including solar inverters and EV charging infrastructure.

For engineers reviewing the IMT65R083M1HXUMA1 datasheet, IMT65R083M1HXUMA1 pinout, IMT65R083M1HXUMA1 application, or IMT65R083M1HXUMA1 equivalent, key selection criteria include its 83 mΩ R_DS(on) at 25 °C, 44 nC Q_oss at 400 V, 18 nC total gate charge, Kelvin-source–enabled low switching losses, and JEDEC-qualified industrial reliability up to T_j,max = 175 °C.

Technical Context

This CoolSiC™ M1 generation device uses trench-gate SiC technology with a dedicated Kelvin source terminal to decouple gate drive loop from power source path, enabling precise gate voltage control and minimizing dynamic R_DS(on) rise during switching. Its body diode exhibits commutation-robust fast recovery (t_fr = 18.2 ns, Q_frm = 54 nC) and low reverse recovery charge.

The MOSFET operates with V_GS = 0–20 V recommended range, features 3.5–5.7 V gate threshold voltage, and delivers stable 83 mΩ R_DS(on),typ with minimal temperature dependency-111 mΩ max at 175 °C-supporting high-power-density designs in thermally constrained environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports DC-link voltages up to 400 V nominal in single-phase systems or 800 V in two-level three-phase inverters with margin
R_DS(on),typ	83 mΩ at V_GS = 18 V, I_D = 11.2 A, T_j = 25 °C - enables low conduction loss in 3–5 kW power stages
Q_g	18 nC at V_DD = 400 V, I_D = 11.2 A - determines gate driver power requirement and switching speed under standard conditions
Q_oss	44 nC at V_DS = 400 V - defines energy loss during turn-off and impacts snubber design in hard-switched converters
t_d(on)/t_r	5.9 ns / 7.3 ns at V_DD = 400 V, R_G,ext = 1.8 Ω - enables >100 kHz switching with controlled dv/dt and minimal overlap loss
T_j,max	175 °C - allows operation in high-ambient environments without derating, supporting compact heatsink designs
R_th(j–c)	0.95 °C/W - enables direct mounting to heatsinks with predictable thermal resistance for junction-to-case heat transfer

Pinout & Package

IMT65R083M1HXUMA1 is housed in PG-HSOF-8 (TOLL) surface-mount package with exposed drain tab for thermal performance and dual-source configuration: pins 3–8 are main power source terminals, pin 2 is Kelvin source, and pin 1 is gate.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Primary thermal and current path; soldered directly to PCB copper pour for low-inductance, high-current conduction and heat dissipation
Pin 1 (Gate)	Control input	Standard gate drive node; requires low-impedance routing to minimize ringing and ensure reliable turn-on/turn-off
Pin 2 (Kelvin Source)	Sense reference for gate drive loop	Provides gate return path isolated from power source current, eliminating source inductance impact on gate voltage stability
Pins 3–8 (Source)	Main power source connection	Parallel low-inductance source terminals carrying full load current; must be routed with symmetric layout to balance current sharing

Key Features

Feature	Design Value
Kelvin source configuration	Enables stable gate control under high di/dt by eliminating source inductance-induced gate voltage undershoot/overshoot
Commutation-robust body diode	Fast reverse recovery (t_fr = 18.2 ns) with low Q_frm = 54 nC reduces shoot-through risk and EMI in bridge-leg hard commutation
JEDEC-qualified for industrial use	Validated per JESD47/22 standards for 175 °C operation, ensuring long-term reliability in uncontrolled ambient environments
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~35% from 25 °C to 175 °C (83 → 111 mΩ), maintaining efficiency across wide thermal range
High avalanche energy rating	E_AS = 95 mJ (single pulse) supports robustness against transient overvoltage events without external clamping

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase string or central inverters converting DC from photovoltaic arrays to grid-synchronized AC at 50/60 Hz with MPPT tracking.

IC Role / Device Role / Timing Role: High-side/low-side switching element in NPC or T-type multilevel topologies operating at 16–50 kHz.

Use Value: 83 mΩ R_DS(on) and low Q_oss reduce conduction + switching losses, enabling >99% peak efficiency and passive cooling in outdoor enclosures.

Use Scenario: Secondary-side DC–DC stage in 150–350 kW liquid-cooled chargers delivering 200–1000 V DC to EV batteries.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge or LLC resonant converter handling 30–60 A continuous current.

Use Value: Kelvin source ensures clean gate drive under 100+ A/μs di/dt, while 175 °C rating supports high-power density in space-constrained modules.

Industrial UPS Systems

Energy Storage Bidirectional Converters

Use Scenario: Online double-conversion UPS units providing seamless backup power for data centers and critical infrastructure.

IC Role / Device Role / Timing Role: Inverter-stage switch in 3L-TNPC or hybrid ANPC topologies operating with <1 μs dead time.

Use Value: Fast, soft body diode recovery minimizes cross-conduction losses during zero-voltage switching transitions, improving system MTBF.

Use Scenario: Grid-tied battery energy storage systems (BESS) performing bidirectional AC/DC conversion for peak shaving and frequency regulation.

IC Role / Device Role / Timing Role: Bidirectional switch in interleaved buck-boost or dual-active-bridge topologies managing 500–1000 V DC bus.

Use Value: Low R_DS(on) temperature drift maintains consistent efficiency during charge/discharge cycles across -25 °C to +60 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ, TO-247-4L package, no Kelvin source; higher Q_g (22 nC)	Lacks Kelvin source; requires careful gate loop layout to mitigate source inductance effects	Select when board layout allows tight gate loop control and lower R_DS(on) outweighs package thermal advantage of TOLL
ROHM SCT3080KL	650 V, 80 mΩ, TO-263-7L package, Kelvin source; slightly higher Q_oss (50 nC)	Same Kelvin architecture but larger footprint and higher output capacitance increases turn-off loss at 400 V	Select when existing TO-263-7L footprint compatibility is required and 6.6 μJ E_oss is acceptable for target switching frequency

Compared with C3M0065065K and SCT3080KL, IMT65R083M1HXUMA1 offers superior thermal resistance (0.95 °C/W vs. ≥1.2 °C/W), tighter R_DS(on) tolerance (83–111 mΩ vs. wider spreads), and lower Q_oss, making it optimal for high-power-density, air-cooled, and high-reliability industrial systems.

Availability

IMT65R083M1HXUMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging stations, and industrial uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IMT65R083M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in industrial, renewable energy, and electric mobility applications, emphasizing ruggedness, ease of integration, and thermal performance in demanding operating environments.

FAQ

What is the maximum gate-source voltage rating for IMT65R083M1HXUMA1?

The absolute maximum static gate-source voltage is ±23 V, with transient rating up to ±25 V for ≤1% duty cycle. However, Infineon recommends operating within –2 V to +20 V per Table 4, and using +18 V turn-on and 0 V turn-off for optimal reliability and lifetime performance.

Can the Kelvin source (Pin 2) and main source (Pins 3–8) be shorted externally?

No. The datasheet explicitly states that source and Kelvin source pins are not exchangeable and must not be shorted. Doing so eliminates the Kelvin sensing benefit, reintroduces source inductance into the gate loop, and may cause unstable switching or device failure under high di/dt conditions.

Is IMT65R083M1HXUMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low Q_oss (44 nC at 400 V) and fast, soft body diode (t_fr = 18.2 ns, Q_frm = 54 nC) enable reliable ZVS operation in phase-shifted full-bridge and LLC converters, reducing turn-on loss and EMI without requiring external diodes or complex snubbers.

Does this part require a negative gate voltage for turn-off?

No. The device is fully specified for 0 V turn-off and does not require negative bias. Infineon's recommended operating range includes V_GS(off) = 0 V, and the gate oxide is qualified for repeated 0 V gate drive without degradation-simplifying driver design and reducing component count.

IMT65R083M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT65R083M1HXUMA1 FAQ

1.How can I place an order for IMT65R083M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R083M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R083M1HXUMA1 reliable?

The price and inventory of IMT65R083M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R083M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R083M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R083M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R083M1HXUMA1?

IMT65R083M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R083M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R083M1HXUMA1?

For technical support, including IMT65R083M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R083M1HXUMA1 requirements.

6.How does Aetrix verify that IMT65R083M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R083M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R083M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R083M1HXUMA1?

All IMT65R083M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R083M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R083M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMT65R083M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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