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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R163M1HXUMA1

Name: IMT65R163M1HXUMA1
Brand: Infineon Technologies
SKU: IMT65R163M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R163M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT65R163M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

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Product details

Overview

IMT65R163M1HXUMA1 from Infineon is a 650 V, 163 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, designed for high-efficiency hard-switching topologies including solar inverters and EV charging systems. It delivers 31 A peak drain current, 4.1 μJ output switching energy at 400 V, and supports continuous operation up to T_j = 175 °C.

For engineers reviewing the IMT65R163M1HXUMA1 datasheet, IMT65R163M1HXUMA1 pinout, IMT65R163M1HXUMA1 application, or IMT65R163M1HXUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, commutation-robust body diode Q_rr, Kelvin-source-enabled low switching losses, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: higher breakdown field strength, lower intrinsic carrier concentration, and superior thermal conductivity versus silicon. Its gate oxide is qualified for 175 °C operation and exhibits enhanced reliability under repeated dv/dt stress up to 200 V/ns.

The device integrates a Kelvin source terminal (Pin 2) separate from power source (Pins 3–8), enabling accurate gate drive referencing and reducing dynamic R_DS(on) rise during high di/dt switching. The internal body diode supports continuous hard commutation with 17 ns forward recovery time and low Q_fr of 39 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage compatible with 400 V DC bus systems with 50% safety margin.
R_DS(on), typ	163 mΩ at V_GS = 18 V, I_D = 5.7 A, T_j = 25 °C - Enables low conduction loss in high-current SMPS stages.
Q_oss	27 nC at V_DS = 400 V - Low output charge reduces turn-off energy loss and improves ZVS feasibility.
E_oss	4.1 μJ at V_DS = 400 V - Quantifies stored energy in output capacitance; critical for snubberless design.
I_D, peak	31 A - Supports short-duration overload conditions in UPS and battery formation equipment.
T_j,max	175 °C - Enables compact heatsinking and operation in harsh ambient environments without derating.
dv/dt rating	200 V/ns - Ensures robustness against parasitic ringing and false turn-on in high-speed layouts.
Q_g, total	10 nC - Low gate charge enables fast switching with standard 1.8 Ω gate drivers and minimal driver loss.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, thermally enhanced with exposed drain tab for low R_th(j–c) = 1.41 °C/W. Features isolated Kelvin source (Pin 2) and parallel power source terminals (Pins 3–8).

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	High-current power return path	Exposed copper pad for direct PCB thermal coupling; carries full load current and dissipates heat.
Pin 1	Gate	Standard MOSFET gate input; driven by external gate driver referenced to Kelvin source (Pin 2).
Pin 2	Kelvin Source	Low-current sense node for gate drive reference; eliminates source inductance impact on switching waveform fidelity.
Pins 3–8	Power Source	Parallel low-inductance source connection; carries main load current and connects to system ground/power return.

Key Features

Feature	Design Value
Kelvin source configuration	Enables precise gate control under high di/dt, reducing dynamic R_DS(on) overshoot and improving EMI performance.
Commutation-robust body diode	Q_rr = 39 nC and t_fr = 17 ns support zero-voltage switching in totem-pole PFC without external SiC diodes.
JEDEC-qualified for industrial use	Validated per JESD47/22 standards for 175 °C junction operation and long-term reliability in mission-critical systems.
Low C_oss energy (E_oss)	4.1 μJ at 400 V allows efficient soft-switching in resonant LLC and phase-shifted full-bridge converters.
High dv/dt immunity	200 V/ns rating ensures stable operation in high-frequency, high-power-density designs with tight layout constraints.

Applications

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: Three-phase string inverters operating at 100 kHz switching frequency with 1000 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: High-side and low-side switch in interleaved boost and transformerless inverter stages.

Use Value: 163 mΩ R_DS(on) and 4.1 μJ E_oss reduce conduction and switching losses, enabling >99% peak efficiency at 30 kW.

Use Scenario: 22 kW onboard chargers using dual-phase totem-pole PFC and CLLC DC–DC stages.

IC Role / Device Role / Timing Role: Fast-switching PFC switch with integrated body diode handling reverse recovery during hard commutation.

Use Value: 39 nC Q_fr and 17 ns t_fr minimize dead-time loss and eliminate need for external anti-parallel SiC diodes.

Uninterruptible Power Supplies

Energy Storage Systems

Use Scenario: Online double-conversion UPS with 400 V DC bus and 50/60 Hz output, requiring high reliability over 15-year lifetime.

IC Role / Device Role / Timing Role: Output inverter switch in IGBT-replacement topology operating at 16–20 kHz.

Use Value: 175 °C T_j,max and JEDEC qualification ensure stable performance under sustained overload and elevated ambient temperatures.

Use Scenario: Bidirectional DC–DC converter in grid-scale battery energy storage, cycling between charge/discharge modes.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in isolated dual-active-bridge (DAB) topology.

Use Value: Low R_DS(on) temperature coefficient maintains consistent conduction loss across –40 °C to +70 °C ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	R_DS(on) = 65 mΩ (lower), Q_g = 22 nC (higher), TO-247-4L package, no Kelvin source	Higher conduction efficiency but greater gate drive loss and reduced dv/dt immunity vs. IMT65R163M1HXUMA1	Select when lowest R_DS(on) dominates and layout allows larger package; avoid where high di/dt or space-constrained SMD is required.
STW65N65FD2	650 V SiC MOSFET, R_DS(on) = 140 mΩ, Q_g = 12 nC, H2PAK-7 package, no Kelvin source	Similar R_DS(on) but lacks Kelvin source and has lower dv/dt rating (150 V/ns); not JEDEC-qualified for industrial temp	Acceptable for cost-sensitive industrial SMPS where 175 °C operation and hard-commutation robustness are non-critical.

Compared with C3M0065065K and STW65N65FD2, IMT65R163M1HXUMA1 uniquely balances low switching loss (via Kelvin source), industrial reliability (JEDEC), and SMD manufacturability-making it optimal for high-volume, high-reliability EV charger and solar inverter designs.

Availability

IMT65R163M1HXUMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and uninterruptible power supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IMT65R163M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technology development.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial automation-emphasizing ruggedness, ease of use, and system-level efficiency gains over silicon alternatives.

FAQ

Can IMT65R163M1HXUMA1 be used with standard silicon MOSFET gate drivers?

Yes-it is compatible with standard ±20 V gate drivers due to its V_GS rating of –5 V to +23 V (static) and recommended V_GS(on) of 18 V. The Kelvin source (Pin 2) must be connected directly to the driver's source reference, while power source (Pins 3–8) connects to system ground. This preserves gate control integrity under high di/dt.

What is the purpose of the Kelvin source pin, and how should it be routed?

The Kelvin source (Pin 2) provides a dedicated low-current return path for the gate driver, decoupling gate loop inductance from power current paths. It must be routed with short, direct traces to the driver's source terminal-never shared with power source traces or tied to ground planes carrying high di/dt currents-to prevent gate oscillation and false turn-on.

Is IMT65R163M1HXUMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low E_oss (4.1 μJ at 400 V) and fast output capacitance discharge characteristics enable reliable ZVS in LLC and phase-shifted full-bridge converters. The device's 27 nC Q_oss and 52 pF C_oss,er allow predictable resonant tank behavior without excessive dead-time penalty or voltage spike risk.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode offers Q_fr = 39 nC and t_fr = 17 ns-comparable to mid-performance discrete SiC Schottkys-enabling single-device totem-pole PFC without external diodes. While discrete diodes offer lower Q_rr, this body diode eliminates component count, layout complexity, and thermal mismatch issues in high-density designs.

IMT65R163M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT65R163M1HXUMA1 FAQ

1.How can I place an order for IMT65R163M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R163M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R163M1HXUMA1 reliable?

The price and inventory of IMT65R163M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R163M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R163M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R163M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R163M1HXUMA1?

IMT65R163M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R163M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R163M1HXUMA1?

For technical support, including IMT65R163M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R163M1HXUMA1 requirements.

6.How does Aetrix verify that IMT65R163M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R163M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R163M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R163M1HXUMA1?

All IMT65R163M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R163M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R163M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMT65R163M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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