Infineon Technologies IMT65R260M1HXUMA1

Overview

IMT65R260M1HXUMA1 from Infineon is a 650 V, 260 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, rated for 20 A pulsed drain current and 175 °C maximum junction temperature. It delivers low switching losses via dedicated driver-source pin, commutation-robust fast body diode (Q_fr = 33 nC), and optimized gate charge (Q_G = 6 nC), enabling high-efficiency operation in hard-switched SMPS and solar inverters.

For engineers reviewing the IMT65R260M1HXUMA1 datasheet, IMT65R260M1HXUMA1 pinout, IMT65R260M1HXUMA1 application, or IMT65R260M1HXUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, dv/dt ruggedness (200 V/ns), avalanche energy rating (30 mJ single pulse), and Kelvin-source layout compatibility with gate driver PCB routing.

Technical Context

This CoolSiC™ M1-generation device uses trench-gate SiC technology to achieve stable R_DS(on) across temperature (260 mΩ typ @ 25 °C, 346 mΩ max @ 175 °C) and low output charge (Q_oss = 22 nC @ 400 V). Its internal body diode features fast reverse recovery (t_fr = 16.6 ns) and low Q_fr, supporting ZVS and hard-commutation topologies without external anti-parallel diodes.

The PG-HSOF-8 package integrates a Kelvin source terminal (Pin 2) electrically isolated from power source pins (Pins 3–8), enabling accurate gate drive referencing and up to 4× reduction in switching losses versus conventional 3-pin packages. Gate threshold voltage is tightly distributed (V_GS(th) = 3.5–5.7 V), ensuring robust noise immunity in high-dv/dt environments.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, thermally enhanced with exposed drain tab for low R_th(j-c) = 1.84 °C/W. Features integrated Kelvin source terminal for precision gate control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0260065K and SCT3260AL, IMT65R260M1HXUMA1 offers superior high-frequency stability due to its TOLL package's low-inductance Kelvin source and 200 V/ns dv/dt rating-critical for compact, high-power-density designs operating beyond 500 kHz.

Availability

IMT65R260M1HXUMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV onboard chargers, and high-efficiency telecom SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IMT65R260M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over two decades of SiC development and manufacturing expertise.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in renewable energy, EV infrastructure, and industrial systems-designed specifically to replace silicon IGBTs and MOSFETs in 600–650 V applications demanding low loss and thermal resilience.

FAQ

What is the purpose of the Kelvin source pin (Pin 2) on IMT65R260M1HXUMA1?

Pin 2 is the dedicated driver-source reference terminal, electrically isolated from the main power source pins (3–8). It provides a low-inductance return path for the gate driver, eliminating source inductance effects that cause gate voltage undershoot/overshoot and oscillation during fast switching-enabling stable operation above 500 kHz.

Can IMT65R260M1HXUMA1 be driven with standard 15 V gate drivers?

Yes-its recommended gate voltage range is 0 V to 18 V, fully compatible with industry-standard isolated gate drivers (e.g., Silicon Labs Si827x, TI UCC53xx). The device's V_GS(th) (3.5–5.7 V) ensures clean turn-on at 15 V while maintaining noise margin against spurious turn-on from dv/dt coupling.

How does the body diode performance compare to silicon alternatives?

This SiC MOSFET's intrinsic body diode achieves t_fr = 16.6 ns and Q_fr = 33 nC-over 5× faster and with <20% of the reverse recovery charge of equivalent 650 V silicon superjunction MOSFETs. This eliminates need for external SiC Schottky diodes in totem-pole PFC and reduces EMI in hard-commutated bridges.

Is IMT65R260M1HXUMA1 qualified for automotive applications?

No-it is fully qualified per JEDEC JESD47 for industrial applications only (operating T_j = –55 °C to 175 °C), with no AEC-Q101 stress testing or automotive-specific documentation. For automotive traction or OBC use, Infineon's automotive-grade CoolSiC™ variants (e.g., IMW65R260M1H) must be selected instead.