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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMTA65R020M2HXTMA1

Name: IMTA65R020M2HXTMA1
Brand: Infineon Technologies
SKU: IMTA65R020M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMTA65R020M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMTA65R020M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMTA65R020M2HXTMA1 from Infineon is a 650 V, 20 mΩ SiC MOSFET in PG-LHSOF-4 package, designed as a high-efficiency power switch for hard-switched and resonant topologies. It delivers 288 A peak drain current, 4.5 V gate threshold voltage, and ultra-low 123 µJ total switching losses at 400 V/46.9 A-enabling compact, high-power-density SMPS and EV charging systems.

For engineers reviewing the IMTA65R020M2HXTMA1 datasheet, IMTA65R020M2HXTMA1 pinout, IMTA65R020M2HXTMA1 application, or IMTA65R020M2HXTMA1 equivalent, key selection criteria include its 0.36 °C/W junction-to-case thermal resistance, robust body diode with 18 ns forward recovery time, bipolar gate drive compatibility (0 V turn-off), and non-interchangeable source pins critical for layout integrity.

Technical Context

This CoolSiC™ Gen2 device uses trench-based silicon carbide technology to achieve benchmark R_DS(on) of 20 mΩ at V_GS = 18 V and T_j = 25 °C, with guaranteed max 24 mΩ at 175 °C. Its 4.5 V V_GS(th) ensures immunity to parasitic turn-on even under 0 V gate bias during turn-off.

The PG-LHSOF-4 package integrates tabbed drain and isolated driver/source terminals to minimize stray inductance. Internal body diode operation is validated for hard commutation, and the 108 nC Q_oss at 400 V supports fast, low-loss switching in 100 kHz–1 MHz PFC and DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 800 V bus designs with 20% margin
R_DS(on), typ	20 mΩ at V_GS = 18 V, T_j = 25 °C - Enables <1.2 W conduction loss at 77 A DC
Q_g	57 nC - Low gate charge reduces driver power and enables 18 V gate drive without overdesign
E_sw,tot	123 µJ at V_DD = 400 V, I_D = 46.9 A - Supports >99% efficiency in 3.3 kW LLC resonant converters
R_th(j-c)	0.36 °C/W - Allows 416 W power dissipation with ≤65 °C case temperature rise
t_fr	18 ns - Fast body diode recovery enables ZVS in asymmetric half-bridge and totem-pole PFC

Pinout & Package

PG-LHSOF-4 is a surface-mount, thermally enhanced 4-pin package with isolated driver source terminal. Drain is connected to the exposed metal tab for low-inductance, high-current path and direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Low-inductance, high-current path; must be soldered to PCB copper pour or heatsink
Pin 1 (Gate)	Control input	High-impedance MOSFET gate requiring <2.5 Ω external series resistance for ringing suppression
Pins 3–4 (Power Source)	Power return path for load current	Carries full output current; connects to low-side shunt or output capacitor negative
Pin 2 (Driver Source)	Reference for gate driver loop	Must not be swapped with Pin 3–4; dedicated path minimizes gate loop inductance and prevents false turn-on

Key Features

Feature	Design Value
Ultra-low Q_oss	108 nC at 400 V - Reduces capacitive turn-off loss and improves light-load efficiency in high-frequency converters
Bipolar gate drive support	0 V turn-off voltage - Eliminates need for negative gate drivers in cost-sensitive industrial inverters
Robust body diode	18 ns t_fr, 110 nC Q_fr - Enables reliable hard-commutation in motor drives without external freewheeling diodes
JEDEC-qualified reliability	Qualified per JESD47 for industrial applications up to 175 °C junction - Ensures 15+ year field life in solar inverters
XT interconnection	Infineon's die-attach technology - Delivers 0.36 °C/W R_th(j-c) and <10% thermal resistance drift after 1000 thermal cycles

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase 11–22 kW string inverters operating at 100 kHz with SiC-based interleaved boost + three-level NPC topology.

IC Role / Device Role / Timing Role: High-side switching element in boost stage; handles 400–1000 V DC input with 288 A surge capability.

Use Value: 20 mΩ R_DS(on) and 123 µJ E_sw,tot enable >99.1% peak efficiency and eliminate forced-air cooling.

Use Scenario: 150–350 kW liquid-cooled charging modules using dual-active-bridge (DAB) isolation with 100–200 kHz switching.

IC Role / Device Role / Timing Role: Primary-side switch in DAB half-bridge; operates with zero-voltage switching and 175 °C junction temperature.

Use Value: 0.36 °C/W R_th(j-c) and JEDEC industrial qualification ensure stable 30-year MTBF under continuous 95% load.

Industrial UPS Systems

High-Power Motor Drives

Use Scenario: Online double-conversion 50–100 kVA UPS with SiC-based three-level T-type inverter output stage.

IC Role / Device Role / Timing Role: Low-side switch in T-type leg; conducts 77 A continuous current with bidirectional body diode conduction.

Use Value: 18 ns body diode recovery time eliminates reverse recovery spikes, reducing EMI filter size by 40%.

Use Scenario: 75–200 kW servo drives for robotics and CNC machines using active neutral-point-clamped (ANPC) topology.

IC Role / Device Role / Timing Role: Neutral-point clamping switch handling 288 A short-circuit current pulses during fault conditions.

Use Value: 272 mJ single-pulse avalanche energy rating protects against IGBT-like short-circuit failure modes without desat detection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0021065K (Wolfspeed)	650 V, 21 mΩ, TO-247-4L package; higher R_DS(on) (21 vs. 20 mΩ), no isolated driver source pin	Requires external Kelvin source routing; less suitable for ultra-low-inductance layouts	Select when legacy TO-247 footprint compatibility is required and gate loop inductance can be managed externally
SCT3022KL (ROHM)	650 V, 22 mΩ, TO-263-7 package; 5.5 V V_GS(th); higher Q_g (68 nC vs. 57 nC)	Higher gate threshold increases risk of unintended turn-on in noisy environments; needs tighter gate drive control	Select only if existing ROHM ecosystem integration (drivers, gate resistors) justifies 5% higher conduction loss

Compared with C3M0021065K and SCT3022KL, IMTA65R020M2HXTMA1 offers the lowest R_DS(on) and integrated driver-source isolation-making it optimal for space-constrained, high-reliability 100+ kHz industrial power supplies where layout-induced oscillation must be eliminated at the package level.

Availability

IMTA65R020M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IMTA65R020M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing facilities.

This part belongs to the CoolSiC™ Gen2 family-designed specifically for high-efficiency, high-power-density industrial and renewable energy systems operating above 100 kHz with demanding thermal and reliability requirements.

FAQ

What is the maximum recommended gate drive voltage for IMTA65R020M2HXTMA1?

The absolute maximum gate-source voltage is 23 V static and 25 V transient (≤500 ns, ≤1% duty cycle). Infineon recommends 18 V turn-on and 0 V turn-off for optimal performance and robustness. Operating above 18 V provides no significant R_DS(on) improvement but increases gate oxide stress and ESD sensitivity.

Can the Power Source and Driver Source pins be shorted together on the PCB?

No-they must remain electrically separate. Pin 2 (Driver Source) serves as the dedicated reference for the gate driver loop to minimize common-source inductance. Shorting it to Pins 3–4 (Power Source) reintroduces 2–3 nH of inductance into the gate loop, causing overshoot, ringing, and potential false turn-on during high-di/dt switching events.

Is this device suitable for linear (ohmic) mode operation?

No. The datasheet explicitly states "Linear mode operation is not recommended." This MOSFET is optimized for switching applications only. Linear operation risks localized thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area (SOA) margin at high V_DS/I_D combinations.

What is the significance of the ".XT" in the package designation?

".XT" refers to Infineon's proprietary die-attach interconnection technology, which replaces traditional solder with a sintered silver interface. This achieves lower thermal resistance (0.36 °C/W), superior power cycling capability (>1000 cycles to failure), and reduced delamination risk under thermal shock-critical for outdoor solar and EV charging deployments.

IMTA65R020M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMTA65R020M2HXTMA1 FAQ

1.How can I place an order for IMTA65R020M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMTA65R020M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMTA65R020M2HXTMA1 reliable?

The price and inventory of IMTA65R020M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMTA65R020M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMTA65R020M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMTA65R020M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMTA65R020M2HXTMA1?

IMTA65R020M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMTA65R020M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMTA65R020M2HXTMA1?

For technical support, including IMTA65R020M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMTA65R020M2HXTMA1 requirements.

6.How does Aetrix verify that IMTA65R020M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMTA65R020M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMTA65R020M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMTA65R020M2HXTMA1?

All IMTA65R020M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMTA65R020M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMTA65R020M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMTA65R020M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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