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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMTA65R040M2HXTMA1

Name: IMTA65R040M2HXTMA1
Brand: Infineon Technologies
SKU: IMTA65R040M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMTA65R040M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMTA65R040M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMTA65R040M2HXTMA1 from Infineon is a 650 V, 40 mΩ SiC MOSFET in PG-LHSOF-4 package, designed as a high-efficiency power switch for hard-switched topologies. It features 4.5 V gate threshold voltage, 28 nC total gate charge, and 7.2 μJ output switching energy at 400 V, enabling high-frequency operation in solar inverters and EV charging systems.

For engineers reviewing the IMTA65R040M2HXTMA1 datasheet, IMTA65R040M2HXTMA1 pinout, IMTA65R040M2HXTMA1 application, or IMTA65R040M2HXTMA1 equivalent, key selection criteria include its 0.62 °C/W junction-to-case thermal resistance, robust body diode with 12.2 ns forward recovery time, and strict non-interchangeability of source pins-critical for gate drive layout integrity and avalanche reliability.

Technical Context

This CoolSiC™ Gen 2 device uses silicon carbide trench technology to deliver low conduction loss (R_DS(on) = 40 mΩ typ. @ V_GS = 18 V, T_j = 25 °C) and ultra-low switching losses (E_on = 30 μJ, E_off = 16 μJ @ 400 V). Its 4.5 V V_GS(th) ensures immunity to parasitic turn-on even with 0 V turn-off bias.

The 4-pin PG-LHSOF-4 package separates driver source (Pin 2) from power source (Pins 3–4), minimizing source inductance in high-di/dt applications. Internal body diode operation is validated under hard commutation, supporting bidirectional current handling without external freewheeling diodes in certain topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V DC-link applications like string inverters and on-board chargers.
R_DS(on)	40 mΩ @ V_GS = 18 V, T_j = 25 °C - Enables <54 A continuous conduction with low conduction loss at rated junction temperature.
Q_G	28 nC - Low gate charge supports fast switching with standard 1.8 Ω gate drivers and reduces gate drive power loss.
E_oss	7.2 μJ @ V_DS = 400 V - Energy stored in output capacitance directly impacts turn-on loss in hard-switched converters.
t_r/t_f	8.3 ns / 4.6 ns - Fast edge rates enable >100 kHz operation while maintaining EMI control via layout optimization.
R_th(j–c)	0.62 °C/W - Enables high-power density thermal design with direct heatsink mounting and minimal interface resistance.

Pinout & Package

Package: PG-LHSOF-4 - Surface-mount, thermally enhanced 4-pin leadless package with isolated tab (Drain), separate driver and power source terminals for minimized common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain connection and thermal path	Exposed copper tab serves as primary heat sink interface and carries full load current; must be soldered to PCB thermal pad.
Pin 1 (Gate)	Control input terminal	Low-inductance gate connection optimized for fast switching; requires Kelvin-connected gate resistor to minimize ringing.
Pins 3–4 (Power Source)	Main current return path for power loop	Carries full load current back to DC-link capacitor; forms low-inductance power loop with Drain tab and external busbar.
Pin 2 (Driver Source)	Reference node for gate driver IC	Provides dedicated Kelvin sense point for gate driver feedback; not interchangeable with Pins 3–4 to avoid shoot-through risk.

Key Features

Feature	Design Value
Ultra-low Q_G × R_DS(on) figure of merit	1.12 nC·Ω - Reduces combined conduction and switching loss, enabling >99% efficiency in 11 kW OBC designs.
Body diode with t_fr = 12.2 ns	Validated hard-commutation capability - Eliminates need for external Si diodes in LLC resonant and totem-pole PFC stages.
Non-interchangeable source pins	Pin 2 (driver source) electrically isolated from Pins 3–4 (power source) - Prevents gate loop instability during high-di/dt transitions.
JEDEC-qualified for industrial use	Rated for T_j = –55 °C to +175 °C - Supports extended lifetime in uncooled or high-ambient environments like outdoor EVSE enclosures.

Applications

Solar PV String Inverter

EV On-Board Charger (OBC)

Use Scenario: High-voltage DC–AC conversion stage operating at 100 kHz with 1000 V DC input.

IC Role / Device Role / Timing Role: Primary high-side switching element in three-phase inverter bridge, handling up to 54 A RMS.

Use Value: 40 mΩ R_DS(on) and 0.62 °C/W R_th(j–c) enable >99.1% peak efficiency at 11 kW while maintaining T_j < 130 °C without forced air.

Use Scenario: Totem-pole PFC front-end converting 230 V AC to 400 V DC at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching leg in bidirectional PFC stage, conducting reverse current during AC half-cycle.

Use Value: Robust body diode with 12.2 ns t_fr and low Q_rr eliminates reverse recovery loss and EMI spikes seen with Si superjunction devices.

Uninterruptible Power Supply (UPS)

Industrial Motor Drive

Use Scenario: Online double-conversion UPS with 650 V DC-link and IGBT replacement requirement.

IC Role / Device Role / Timing Role: Output inverter switch replacing 600 V IGBTs to reduce conduction loss and improve dynamic response.

Use Value: 142 A peak pulsed current rating and 132 mJ single-pulse avalanche energy support short-circuit withstand during grid fault conditions.

Use Scenario: 30 kW servo drive using space-vector PWM at 16 kHz with active cooling.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter delivering precise torque control with low dead-time dependency.

Use Value: 4.5 V V_GS(th) provides noise margin against gate bounce, ensuring reliable turn-off even with 200 V/ns dv/dt transients on adjacent phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040065K	R_DS(on) = 40 mΩ, but Q_G = 32 nC; higher gate charge increases driver loss and slows switching.	Lacks separate driver/power source pins - requires careful layout to manage source inductance in high-frequency PFC.	Prefer when gate drive simplicity outweighs optimal EMI performance; verify layout-induced oscillation risk.
ROHM SCT3040KL	R_DS(on) = 42 mΩ, V_GS(th) = 5.5 V; higher threshold reduces noise immunity in noisy motor drive environments.	Uses TO-247-4L package - larger footprint and higher thermal resistance (R_th(j–c) = 0.75 °C/W) limits power density.	Choose where legacy TO-247 compatibility or availability trumps thermal performance in lower-power (<7 kW) systems.

Compared with C3M0040065K and SCT3040KL, IMTA65R040M2HXTMA1 delivers superior thermal performance (0.62 °C/W), lowest gate charge (28 nC), and pin-level source separation-making it optimal for compact, high-frequency, high-reliability designs where layout-controlled EMI and junction temperature are critical.

Availability

IMTA65R040M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV on-board chargers, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IMTA65R040M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density power conversion in renewable energy and e-mobility systems-prioritizing ruggedness, thermal performance, and ease of gate drive integration.

FAQ

What is the maximum recommended gate drive voltage for IMTA65R040M2HXTMA1?

The absolute maximum transient gate-source voltage is 25 V (≤500 ns, ≤1% duty cycle), but Infineon specifies 18 V as the recommended turn-on voltage and 0 V as the recommended turn-off voltage. Operating above 20 V risks accelerated gate oxide degradation, while driving below 15 V may compromise R_DS(on) stability across temperature.

Can the driver source (Pin 2) and power source (Pins 3–4) be shorted together?

No-they must remain electrically isolated. Shorting them eliminates the Kelvin sensing benefit, introduces common-source inductance into the gate loop, and can cause false turn-on during high-di/dt events. The datasheet explicitly warns that interchange or connection leads to malfunction and potential device failure.

Is this device qualified for automotive applications?

No-IMTA65R040M2HXTMA1 is fully qualified per JEDEC standards for industrial applications only (T_j = –55 °C to +175 °C), with no AEC-Q101 qualification or automotive-specific reliability testing. For automotive traction or OBC use, Infineon's automotive-grade variants (e.g., IMWA65R048M2H) must be selected.

How does the body diode performance compare to silicon alternatives?

Its body diode achieves 12.2 ns forward recovery time and 56 nC recovery charge at 1000 A/μs di/dt-significantly faster and lower-loss than Si superjunction MOSFETs (typically >50 ns, >200 nC). This enables zero-voltage switching in totem-pole PFC without external diodes and eliminates reverse recovery spikes that stress gate drivers.

IMTA65R040M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMTA65R040M2HXTMA1 FAQ

1.How can I place an order for IMTA65R040M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMTA65R040M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMTA65R040M2HXTMA1 reliable?

The price and inventory of IMTA65R040M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMTA65R040M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMTA65R040M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMTA65R040M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMTA65R040M2HXTMA1?

IMTA65R040M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMTA65R040M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMTA65R040M2HXTMA1?

For technical support, including IMTA65R040M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMTA65R040M2HXTMA1 requirements.

6.How does Aetrix verify that IMTA65R040M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMTA65R040M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMTA65R040M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMTA65R040M2HXTMA1?

All IMTA65R040M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMTA65R040M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMTA65R040M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMTA65R040M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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