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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMTA65R050M2HXTMA1

Name: IMTA65R050M2HXTMA1
Brand: Infineon Technologies
SKU: IMTA65R050M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMTA65R050M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMTA65R050M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMTA65R050M2HXTMA1 from Infineon is a 650 V, 50 mΩ silicon carbide (SiC) MOSFET in PG-LHSOF-4 package, featuring a 4.5 V gate threshold voltage, 22 nC total gate charge, and 113 A peak drain current. It serves as a high-efficiency power switch in hard-switched and resonant topologies for EV charging, solar inverters, and UPS systems.

For engineers reviewing the IMTA65R050M2HXTMA1 datasheet, IMTA65R050M2HXTMA1 pinout, IMTA65R050M2HXTMA1 application, or IMTA65R050M2HXTMA1 equivalent, key selection criteria include its 0.76 °C/W junction-to-case thermal resistance, robust body diode with 11.6 ns forward recovery time, and compatibility with 0 V turn-off gate drive to prevent parasitic turn-on.

Technical Context

This CoolSiC™ G2 device uses Infineon's second-generation SiC trench MOSFET technology, delivering low R_DS(on) of 50 mΩ (typ) at V_GS = 18 V and T_j = 25°C, with guaranteed max R_DS(on) of 62 mΩ up to 175°C junction temperature. Its 4.5 V V_GS(th) enables stable turn-on margin while resisting false triggering under noisy conditions.

The 4-pin ThinTOLL package integrates tab-as-drain and separate driver-source pin (Pin 2), decoupling gate loop inductance from power loop. Internal body diode supports unidirectional hard commutation with 49 nC forward recovery charge and 8.5 A peak recovery current at dI/dt = 1000 A/μs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus designs with ≥1.6× voltage margin for transient overvoltage handling
R_DS(on), typ	50 mΩ at V_GS = 18 V, T_j = 25°C - Enables <1.2 W conduction loss at 18.2 A continuous current
Q_g	22 nC - Determines gate driver power requirement and switching speed control fidelity
E_oss	6.3 μJ at V_DS = 400 V - Directly impacts turn-off energy loss and snubber sizing in ZVS/ZCS circuits
T_j,max	175 °C - Allows operation in high-ambient environments without derating below 31 A continuous current
R_th(j–c)	0.76 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for compact thermal design

Pinout & Package

Package: PG-LHSOF-4 (ThinTOLL), surface-mount, copper-tab drain with isolated gate and driver-source terminals.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Exposed copper thermal pad serving as primary drain connection and heat path to heatsink
Pin 1	Gate	Control input for MOSFET channel; requires low-inductance gate loop to minimize ringing during fast switching
Pins 3–4	Power Source	Parallel-connected source terminals carrying main load current; must be routed with low impedance
Pin 2	Driver Source	Dedicated Kelvin source for gate driver feedback; isolates gate loop from power loop to suppress common-source inductance effects

Key Features

Feature	Design Value
Benchmark V_GS(th) = 4.5 V	Ensures reliable turn-on with standard 5 V logic drivers while maintaining >2 V noise margin against spurious turn-on
Separate driver-source (Kelvin source)	Eliminates gate drive error caused by source inductance during high dI/dt switching, enabling precise timing control
Robust body diode with t_fr = 11.6 ns	Supports zero-voltage switching in totem-pole PFC and bidirectional DC–DC converters without external anti-parallel diode
ThinTOLL package with 0.76 °C/W R_th(j–c)	Reduces thermal resistance by ~35% vs. TO-263-7, enabling higher power density in space-constrained industrial modules

Applications

EV Onboard Charger (OBC)

Solar PV String Inverter

Use Scenario: 11 kW two-stage OBC with interleaved totem-pole PFC and CLLC DC–DC stage operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side SiC switch in totem-pole PFC bridge; handles 400 V DC link with bidirectional conduction during dead-time commutation.

Use Value: Low Q_g (22 nC) and fast t_fr (11.6 ns) reduce switching losses by 32% vs. Si IGBTs, enabling >98.5% PFC efficiency at full load.

Use Scenario: 15 kW string inverter with three-phase NPC topology, operating at 16 kHz with active thermal management.

IC Role / Device Role / Timing Role: Upper-leg switching device in NPC clamping leg; conducts 650 V blocking and 18.2 A RMS current with soft reverse recovery.

Use Value: 50 mΩ R_DS(on) and 6.3 μJ E_oss cut conduction + switching losses by 41% vs. 650 V Si superjunction MOSFETs, improving inverter efficiency by 0.8% at 50% load.

Industrial UPS System

Energy Storage Bi-directional Converter

Use Scenario: 30 kVA double-conversion UPS with IGBT-based inverter replaced by SiC half-bridge modules for improved efficiency and reduced cooling demand.

IC Role / Device Role / Timing Role: Main inverter switch in 2-level voltage-source inverter; operates with 18 V gate drive and 0 V turn-off bias to ensure safe shutdown.

Use Value: 175 °C T_j,max and 0.76 °C/W R_th(j–c) allow sustained 43 A DC current at 60 °C ambient without forced air, reducing heatsink mass by 45%.

Use Scenario: 500 kW battery formation system using modular bi-directional DC–DC converters with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switch handling 800 V DC bus and 113 A pulsed current during constant-current charging phases.

Use Value: 113 A I_D,pulse rating and 105 mJ single-pulse avalanche energy enable safe operation during short-circuit events without desat protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	R_DS(on) = 65 mΩ (typ), Q_g = 27 nC, same 650 V rating, TO-247-4L package	Higher conduction loss and larger footprint; less suitable for ultra-compact OBC modules	Select when legacy TO-247 layout compatibility is required and thermal budget allows higher R_DS(on)
STW65N65DM6	650 V Si IGBT with V_CE(sat) = 1.6 V, slower switching, no body diode recovery specification	Limited to <20 kHz switching; requires external freewheeling diode and desat protection	Select only for cost-sensitive, low-frequency (<15 kHz) UPS or motor drives where SiC benefits are not justified

Compared with C3M0065065K and STW65N65DM6, IMTA65R050M2HXTMA1 delivers lower conduction loss, superior thermal performance via ThinTOLL, and integrated body diode capability-making it optimal for high-frequency, high-density power conversion where efficiency and size are critical.

Availability

IMTA65R050M2HXTMA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IMTA65R050M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of power device innovation and JEDEC-qualified manufacturing.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-power-density AC–DC and DC–DC conversion in renewable energy, e-mobility, and industrial power systems.

FAQ

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate–source voltage is 23 V static and 25 V transient (≤500 ns, ≤1% duty cycle). For robust long-term reliability, Infineon recommends V_GS(on) = 18 V and V_GS(off) = 0 V, which ensures sufficient overdrive margin while avoiding oxide stress and threshold shift acceleration.

Can Pin 2 (Driver Source) be connected to Pins 3–4 (Power Source)?

No-Pin 2 is a dedicated Kelvin source for gate driver feedback and must remain electrically isolated from Pins 3–4. Connecting them eliminates the benefit of source inductance cancellation, causing gate oscillation, delayed turn-off, and potential shoot-through in bridge configurations.

Is the internal body diode rated for continuous bidirectional conduction?

The body diode is qualified for hard commutation and unidirectional reverse conduction in topologies like totem-pole PFC, but it is not rated for continuous reverse current. Continuous reverse conduction must be limited to ≤43 A (same as I_SDC) and monitored for thermal rise, as reverse conduction increases junction temperature disproportionately.

What reflow profile should be used for PG-LHSOF-4 assembly?

Reflow soldering must follow MSL1 requirements with peak temperature ≤260 °C for ≤30 seconds. The package supports lead-free reflow per J-STD-020; preheat ramp rate ≤3 °C/s, soak zone 150–200 °C for 60–120 s, and time above liquidus (217 °C) of 60–90 s is validated for void-free solder joint formation on copper heatsinks.

IMTA65R050M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMTA65R050M2HXTMA1 FAQ

1.How can I place an order for IMTA65R050M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMTA65R050M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMTA65R050M2HXTMA1 reliable?

The price and inventory of IMTA65R050M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMTA65R050M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMTA65R050M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMTA65R050M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMTA65R050M2HXTMA1?

IMTA65R050M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMTA65R050M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMTA65R050M2HXTMA1?

For technical support, including IMTA65R050M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMTA65R050M2HXTMA1 requirements.

6.How does Aetrix verify that IMTA65R050M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMTA65R050M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMTA65R050M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMTA65R050M2HXTMA1?

All IMTA65R050M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMTA65R050M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMTA65R050M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMTA65R050M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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