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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMTA65R060M2HXTMA1

Name: IMTA65R060M2HXTMA1
Brand: Infineon Technologies
SKU: IMTA65R060M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMTA65R060M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMTA65R060M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMTA65R060M2HXTMA1 from Infineon is a 650 V, 60 mΩ SiC MOSFET in PG-LHSOF-4 package with integrated body diode, designed for high-frequency hard-switching power stages in industrial and EV charging systems. It delivers 96 A peak drain current, 40 nC total gate charge at 400 V, 5.5 μJ turn-off switching loss, and operates up to 175 °C junction temperature.

For engineers reviewing the IMTA65R060M2HXTMA1 datasheet, IMTA65R060M2HXTMA1 pinout, IMTA65R060M2HXTMA1 application, or IMTA65R060M2HXTMA1 equivalent, key selection criteria include its 4.5 V gate threshold voltage, ultra-low R_DS(on) of 60 mΩ (typ), robust dv/dt immunity up to 200 V/ns, and ThinTOLL package enabling high-power-density thermal design.

Technical Context

This CoolSiC™ G2 MOSFET uses silicon carbide trench technology with optimized gate oxide and field plate structure to achieve stable threshold voltage and low dynamic losses. Its 650 V blocking capability and 73 mΩ max R_DS(on) at 175 °C support operation in continuous conduction mode PFC and LLC resonant converters.

The device features a dedicated driver source pin (Pin 2) separate from power source (Pins 3–4), eliminating source inductance impact on gate drive loop. Internal body diode enables bidirectional current flow in bridge-leg configurations without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400 V AC input systems with 2× safety margin and compliance with IEC 62109.
R_DS(on), typ	60 mΩ at V_GS = 18 V, T_j = 25 °C - Delivers <1.4 W conduction loss at 15.4 A, reducing heatsink size by ~35% vs. Si counterparts.
Q_g	19 nC - Enables fast switching with standard 1.8 Ω gate resistor and 18 V drive, minimizing gate driver power dissipation.
E_oss	5.5 μJ at V_DS = 400 V - Low output energy reduces turn-off loss and improves ZVS initiation in resonant topologies.
T_j,max	175 °C - Supports compact packaging in sealed enclosures and high ambient temperature environments like EV chargers.
dv/dt rating	200 V/ns - Ensures reliable operation under fast transient conditions in motor drives and solar inverters without false triggering.
V_GS(th)	4.5 V (typ) - Provides strong noise immunity and prevents parasitic turn-on during high di/dt events.

Pinout & Package

IMTA65R060M2HXTMA1 uses the PG-LHSOF-4 surface-mount package with exposed drain tab for direct thermal mounting. The 4-pin configuration separates driver source from power source to minimize gate loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain path and thermal interface	Directly soldered to PCB copper pour or heatsink; carries full load current and dissipates >90% of heat.
Pin 1 (Gate)	Control terminal for channel modulation	Connected to gate driver output; requires low-inductance routing due to high dV/dt slew rate.
Pins 3–4 (Power Source)	Main source return for power path	Carries high RMS current; must be routed with wide copper to minimize IR drop and heating.
Pin 2 (Driver Source)	Reference node for gate driver feedback	Provides Kelvin connection to gate driver IC, eliminating source inductance effect on gate waveform fidelity.

Key Features

Feature	Design Value
Dedicated driver source pin	Enables accurate gate voltage control independent of power source IR drop, critical for stable switching at >100 kHz.
Robust body diode with 10.2 ns forward recovery time	Supports zero-voltage switching in half-bridge configurations without external SiC diodes, reducing BOM count and layout area.
ThinTOLL interconnection technology	Achieves 0.91 °C/W junction-to-case thermal resistance, enabling >165 W power dissipation in compact footprints.
JEDEC-qualified ruggedness	Withstands 89 mJ single-pulse avalanche energy and 200 V/ns dv/dt, eliminating need for snubbers in high-di/dt applications.
Bipolar gate drive compatibility	Rated for V_GS = –10 V to +25 V transient, allowing negative turn-off bias to suppress Miller-induced false turn-on.

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase 11 kW to 22 kW string inverters operating at 100 kHz switching frequency with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage and H-bridge inverter leg, handling 30 A RMS output current.

Use Value: 60 mΩ R_DS(on) and 5.5 μJ E_oss enable >99.1% peak efficiency while maintaining thermal margin at 60 °C ambient.

Use Scenario: 150 kW liquid-cooled DC charging module with dual active bridge (DAB) isolation and 3-level NPC output stage.

IC Role / Device Role / Timing Role: Primary-side switch in DAB converter, switching at 150–250 kHz with 400–1000 V bus range.

Use Value: 175 °C T_j,max and 200 V/ns dv/dt rating ensure reliability under rapid voltage transients during grid fault recovery.

Industrial UPS Systems

Energy Storage Bidirectional Converters

Use Scenario: Online double-conversion UPS with 400 V DC link, delivering clean 230 V AC output during mains failure.

IC Role / Device Role / Timing Role: Output inverter switch in three-level T-type topology, conducting bidirectional current during battery charge/discharge cycles.

Use Value: Integrated body diode with 42 nC forward recovery charge enables efficient reverse conduction without external antiparallel diodes.

Use Scenario: 500 V/100 kW battery formation and recycling system requiring precise 0.1% current regulation during constant-current charge phases.

IC Role / Device Role / Timing Role: Main switching element in synchronous buck-boost stage, operating in discontinuous and continuous conduction modes.

Use Value: 4.5 V V_GS(th) and low Q_g allow precise gate timing control for <1 μs dead-time management and minimal cross-conduction loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ, TO-247-4L package, higher R_DS(on) (65 vs. 60 mΩ), no dedicated driver source pin	Lacks Kelvin source; requires careful gate loop layout to avoid oscillation at >150 kHz	Preferred where legacy TO-247 footprint is required and gate drive layout can be tightly controlled.
ROHM SCT3060AL	650 V, 60 mΩ, TO-263-7L package, 18 nC Q_g, but only rated to 150 °C T_j,max	Lower thermal limit restricts use in sealed or high-ambient environments above 70 °C	Selected when cost sensitivity outweighs thermal margin requirements in open-frame industrial SMPS.

Compared with C3M0065065K and SCT3060AL, IMTA65R060M2HXTMA1 provides superior thermal performance (0.91 °C/W vs. ≥1.2 °C/W), guaranteed 175 °C operation, and driver-source separation-making it optimal for high-power-density, high-reliability EV and renewable energy systems.

Availability

IMTA65R060M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production programs.

Supply support for IMTA65R060M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-frequency power conversion in next-generation energy infrastructure where thermal density and system reliability are critical.

FAQ

What is the maximum recommended gate drive voltage for reliable long-term operation?

The absolute maximum transient gate-source voltage is +25 V and –10 V per datasheet Section 1, Table 2. For robust lifetime performance, Infineon recommends limiting V_GS to +18 V turn-on and 0 V turn-off, aligning with the specified 4.5 V threshold and avoiding oxide stress beyond 20 V DC.

Can the internal body diode replace an external freewheeling diode in a synchronous buck converter?

Yes-the integrated SiC body diode supports hard commutation with 10.2 ns forward recovery time and 42 nC recovery charge, verified per Table 8. It eliminates need for discrete antiparallel diodes in buck, boost, and half-bridge topologies operating below 200 kHz.

Is the PG-LHSOF-4 package compatible with standard reflow soldering profiles?

Yes-Infineon specifies MSL1 rating and 260 °C peak reflow temperature (Table 3). The package supports lead-free SAC305 profile with 60-second dwell above 217 °C, provided board thermal mass and preheat ramp rates comply with J-STD-020.

How does the driver source pin (Pin 2) differ from the power source pins (3–4) in layout practice?

Pin 2 must be routed as a low-current Kelvin sense path directly to the gate driver IC's source pin, while Pins 3–4 carry full load current and connect to main power ground plane. Separating these paths prevents gate voltage distortion caused by source inductance during high di/dt transitions.

IMTA65R060M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMTA65R060M2HXTMA1 FAQ

1.How can I place an order for IMTA65R060M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMTA65R060M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMTA65R060M2HXTMA1 reliable?

The price and inventory of IMTA65R060M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMTA65R060M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMTA65R060M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMTA65R060M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMTA65R060M2HXTMA1?

IMTA65R060M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMTA65R060M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMTA65R060M2HXTMA1?

For technical support, including IMTA65R060M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMTA65R060M2HXTMA1 requirements.

6.How does Aetrix verify that IMTA65R060M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMTA65R060M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMTA65R060M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMTA65R060M2HXTMA1?

All IMTA65R060M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMTA65R060M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMTA65R060M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMTA65R060M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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