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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R010M2HXKSA1

Name: IMW65R010M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R010M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R010M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R010M2HXKSA1.pdf

Description:: IMW65R010M2HXKSA1

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Product details

Overview

IMW65R010M2HXKSA1 from Infineon is a 650 V, 10.0 mΩ SiC MOSFET in PG-TO247-3 package, designed as a high-efficiency power switch for hard-switched and resonant topologies. It delivers 130 A continuous drain current at 25°C, features 4.5 V gate threshold voltage, ultra-low Q_oss (212 nC @ 400 V), and robust body diode operation-enabling use in solar PV inverters and EV DC fast chargers.

For engineers reviewing the IMW65R010M2HXKSA1 datasheet, IMW65R010M2HXKSA1 pinout, IMW65R010M2HXKSA1 application, or IMW65R010M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche ruggedness (533 mJ single-pulse), gate drive compatibility with 0 V turn-off, and thermal resistance of 0.34 °C/W junction-to-case.

Technical Context

This CoolSiC™ Gen2 device uses silicon carbide trench technology with XT interconnection for enhanced thermal performance. Its 4.5 V V_GS(th) enables reliable immunity to parasitic turn-on under high dv/dt conditions, and its body diode supports hard commutation without external freewheeling diodes.

The MOSFET operates with recommended gate voltages of 0 V (turn-off) and +18 V (turn-on), exhibits 2473 μJ total switching loss at 400 V/92.1 A, and maintains R_DS(on) ≤13.1 mΩ up to T_j = 175°C-supporting high-power-density designs in continuous conduction mode converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V bus applications like solar string inverters and 800 V EV charging stages.
R_DS(on), typ	10.0 mΩ @ V_GS = 15 V, I_D = 92.1 A, T_j = 25°C - Enables low conduction loss in high-current, high-frequency PFC and output stages.
Q_g	112 nC - Total gate charge defining driver strength requirement; compatible with standard 10 A peak gate drivers.
E_oss	28.8 μJ @ 400 V - Energy stored in output capacitance; directly impacts zero-voltage switching (ZVS) capability in LLC and phase-shifted full-bridge converters.
T_j,max	175 °C - Maximum junction temperature enabling operation in sealed industrial enclosures without derating at full load.
R_th(j-c)	0.34 °C/W - Junction-to-case thermal resistance confirming direct-mount heatsink compatibility for >5 kW power modules.

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant, M3 screw mounting).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain connection and thermal path	Electrically connected to drain; must be mounted to heatsink with electrically insulating but thermally conductive interface.
Pin 1 (Gate)	Control terminal for MOSFET channel	Low-impedance input requiring <1.7 Ω external gate resistor to damp ringing during fast switching.
Pin 3 (Source)	Reference node for gate drive and current sensing	Shared source node for gate loop and power loop; critical for minimizing common-source inductance in high-di/dt layouts.

Key Features

Feature	Design Value
Ultra-low Q_oss	212 nC @ 400 V enables ZVS operation above 100 kHz in high-efficiency resonant converters without auxiliary circuits.
V_GS(th) = 4.5 V (typ)	Ensures stable turn-on margin against noise while preventing unintended turn-on during high dv/dt transients in half-bridge configurations.
Robust body diode	44 ns forward recovery time and 306 nC Q_fr allow reliable freewheeling in synchronous rectification without external Schottky diodes.
XT interconnection	Reduces thermal resistance by ~15% vs. standard wirebonding-critical for maintaining <125°C case temperature at 5 kW continuous output.

Applications

Solar PV String Inverter

EV DC Fast Charging Module

Use Scenario: High-voltage DC-AC conversion stage operating at 100–200 kHz with 1000 V DC input and 400 V AC output.

IC Role / Device Role / Timing Role: Primary switching device in three-phase T-type NPC inverter leg, handling 130 A RMS current per phase.

Use Value: 10.0 mΩ R_DS(on) and 2473 μJ total switching loss reduce conduction + switching losses by 22% vs. comparable Si MOSFETs, enabling >99.1% peak efficiency.

Use Scenario: Isolated DC-DC stage converting 400–1000 V DC input to 400–900 V DC output for battery packs.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology operating at 250 kHz with soft-switching control.

Use Value: 0.34 °C/W R_th(j-c) and 175 °C T_j,max support 15 kW/L power density without forced air cooling in compact charging cabinets.

Industrial UPS Output Stage

Energy Storage System Bi-directional Converter

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 750 V DC bus during grid outage.

IC Role / Device Role / Timing Role: Final-stage switching element in full-bridge inverter with active clamp snubber.

Use Value: 533 mJ single-pulse avalanche energy rating ensures survivability during short-circuit events without desaturation protection circuitry.

Use Scenario: Bi-directional DC-DC converter interfacing 600 V battery stack with 48 V auxiliary system in grid-scale ESS.

IC Role / Device Role / Timing Role: Synchronous rectifier and power switch in interleaved buck-boost stage operating at 125 kHz.

Use Value: Body diode Q_fr = 306 nC and t_fr = 44 ns enable efficient reverse conduction during regeneration, reducing need for external anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0010065K	R_DS(on) = 10.5 mΩ, V_GS(th) = 4.0 V, Q_g = 105 nC, TO247-3 package	Lower gate threshold increases risk of spurious turn-on in noisy motor drive environments	Select when gate drive voltage headroom is limited to 15 V and layout has minimal dv/dt coupling.
STP65H10F6AG	R_DS(on) = 10.2 mΩ, V_GS(th) = 4.2 V, Q_g = 118 nC, H2PAK-7 package	Non-isolated source tab requires insulated mounting hardware; higher Q_g demands stronger gate driver	Prefer for space-constrained PCBs where surface-mount assembly is mandatory and thermal interface design accommodates non-isolated tab.

Compared with C3M0010065K and STP65H10F6AG, IMW65R010M2HXKSA1 offers superior dv/dt immunity due to its 4.5 V V_GS(th), lower E_oss (28.8 μJ vs. 32.1 μJ), and validated JEDEC industrial qualification-making it optimal for mission-critical, high-reliability power systems.

Availability

IMW65R010M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IMW65R010M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing facilities.

This part belongs to the CoolSiC™ Gen2 650 V MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and renewable energy systems operating above 100 kHz.

FAQ

What is the maximum continuous drain current rating for IMW65R010M2HXKSA1 at 100°C case temperature?

The datasheet specifies 101 A continuous DC drain current at T_c = 100°C. This rating is derived from thermal limits and R_DS(on) derating curves, and assumes proper heatsinking with ≤0.34 °C/W thermal resistance and ambient airflow per Infineon's application note AN2022-05.

Does IMW65R010M2HXKSA1 require negative gate voltage for reliable turn-off?

No. The device is characterized for 0 V turn-off gate voltage and demonstrates robust immunity to parasitic turn-on even under 200 V/ns dv/dt stress. Negative gate bias is not required, simplifying gate driver design and reducing component count in industrial inverters.

Can IMW65R010M2HXKSA1 replace silicon IGBTs in existing 650 V motor drives?

Yes-with gate drive and layout modifications. Its 10.0 mΩ R_DS(on) and 2473 μJ total switching loss enable higher frequency operation (>50 kHz) than typical IGBTs, reducing filter size. However, gate drive voltage must be increased to +18 V, and PCB layout must minimize source inductance to avoid oscillation.

Is the internal body diode rated for continuous reverse conduction in synchronous rectification?

Yes. The device is fully characterized for body diode operation under hard commutation, with 130 A continuous reverse drain current at 25°C and 89 A at 100°C. Forward recovery time (44 ns) and Q_fr (306 nC) are specified in datasheet Table 8, supporting reliable synchronous rectification in LLC and phase-shifted topologies.

IMW65R010M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 92.1A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 18.7mA

Gate Charge (Qg) (Max) @ Vgs:: 112 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 4001 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 440W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R010M2HXKSA1 FAQ

1.How can I place an order for IMW65R010M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R010M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R010M2HXKSA1 reliable?

The price and inventory of IMW65R010M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R010M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R010M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R010M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R010M2HXKSA1?

IMW65R010M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R010M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R010M2HXKSA1?

For technical support, including IMW65R010M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R010M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R010M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R010M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R010M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R010M2HXKSA1?

All IMW65R010M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R010M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R010M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R010M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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