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Infineon Technologies IMW65R020M2HXKSA1

Name: IMW65R020M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R020M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R020M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R020M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMW65R020M2HXKSA1 from Infineon is a 650 V, 20 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package with drain-connected tab, gate on pin 1, and source on pin 3. It features 4.5 V gate threshold voltage, 57 nC total gate charge, and 290 A pulsed drain current, enabling high-efficiency hard-switched topologies in industrial power conversion.

For engineers reviewing the IMW65R020M2HXKSA1 datasheet, IMW65R020M2HXKSA1 pinout, IMW65R020M2HXKSA1 application, or IMW65R020M2HXKSA1 equivalent, key selection criteria include R_DS(on) at 175 °C, dv/dt ruggedness up to 200 V/ns, body diode Q_fr of 167 nC, and thermal resistance R_th(j–c) of 0.55 °C/W for thermal design validation.

Technical Context

This CoolSiC™ G2 MOSFET uses Infineon's trench-based SiC process to deliver ultra-low switching losses (E_on = 506 µJ, E_off = 90 µJ at 400 V/46.9 A) and robust parasitic turn-on immunity-even with 0 V gate turn-off-enabling simplified gate driving without negative bias.

Its internal body diode supports hard commutation with t_fr = 37.2 ns and Q_fr = 167 nC, while .XT interconnection technology ensures low thermal resistance and stable operation up to T_j = 175 °C under continuous industrial duty cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 650 V in boost, PFC, and inverter stages without derating.
R_DS(on), max	24 mΩ at T_j = 175 °C - Enables <83 A continuous conduction at 100 °C case temperature with minimal conduction loss.
Q_G	57 nC - Determines gate driver peak current requirement (~32 A for 1.8 Ω external resistor and 18 V drive).
E_oss @ 400 V	14.7 µJ - Directly impacts turn-off energy and snubber sizing in high-frequency hard-switched converters.
R_th(j–c)	0.55 °C/W - Allows 273 W power dissipation at T_C = 25 °C; critical for heatsink sizing in UPS and solar inverters.
dv/dt ruggedness	200 V/ns - Supports reliable operation in high-di/dt environments like motor drives without false triggering.

Pinout & Package

Package: PG-TO247-3 with isolated tab (drain-connected), standard through-hole mounting, M3/M3.5 screw torque rating of 60 Ncm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires 0 V to 18 V drive; immune to parasitic turn-on even at 0 V off-state.
Pin 2 / Tab	Drain	Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current return path.
Pin 3	Source	Power return and gate reference node; must be low-inductance layout to preserve switching speed and stability.

Key Features

Feature	Design Value
Ultra-low switching losses	E_tot = 596 µJ at 400 V/46.9 A enables >99% efficiency in 100 kHz+ totem-pole PFC designs.
Benchmark V_GS(th)	4.5 V typical threshold provides clear logic-level compatibility and noise margin against spurious turn-on.
Robust body diode	Q_fr = 167 nC and t_fr = 37.2 ns allow reliable freewheeling in bridge-leg configurations without external anti-parallel diodes.
.XT interconnection	Reduces thermal resistance by ~15% vs. prior generation, improving long-term reliability under thermal cycling in EV chargers.

Applications

Industrial SMPS

Solar PV Inverters

Use Scenario: 3.3 kW telecom rectifier with interleaved totem-pole PFC and LLC resonant output stage.

IC Role / Device Role / Timing Role: High-side switch in bidirectional PFC bridge leg operating at 100–200 kHz.

Use Value: 20 mΩ R_DS(on) and 596 µJ total switching loss reduce conduction + switching loss by 32% vs. Si superjunction MOSFETs.

Use Scenario: 15 kW string inverter with three-phase NPC topology and 1700 V DC link.

IC Role / Device Role / Timing Role: Upper-leg switching device in T-type inverter leg handling 650 V DC bus and 40 A RMS phase current.

Use Value: 200 V/ns dv/dt ruggedness prevents false triggering during fast voltage transitions across split capacitors.

EV Charging Infrastructure

Energy Storage Systems

Use Scenario: 22 kW AC/DC OBC module with dual active bridge (DAB) isolation and GaN-assisted SiC primary side.

IC Role / Device Role / Timing Role: Primary-side switch in DAB half-bridge operating at 300–500 kHz with zero-voltage switching assist.

Use Value: Low C_oss (197 pF) and E_oss (14.7 µJ) minimize dead-time losses and improve ZVS range across load conditions.

Use Scenario: 500 kW grid-tied battery storage inverter using 3L-TNPC topology with 1500 V DC input.

IC Role / Device Role / Timing Role: Neutral-point clamping switch handling bidirectional 650 V blocking and 120 A peak current.

Use Value: Fully qualified per JEDEC JESD47 for industrial applications ensures >15-year field life under 175 °C junction stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0021065K	R_DS(on) = 21 mΩ, Q_G = 62 nC, TO247-4L package with Kelvin source	Requires Kelvin source layout for optimal gate control; higher Q_G increases driver loss	Preferred where gate drive stability at >200 kHz is critical; not drop-in due to 4-pin layout
STW65N65DM6	650 V Si IGBT, R_CE(sat) = 45 mΩ, slower switching (t_f ≈ 250 ns), no body diode recovery	Lower cost but limited to <30 kHz; unsuitable for ZVS or high-frequency PFC	Only viable for cost-sensitive, low-frequency UPS or motor drives where efficiency <97% is acceptable

Compared with C3M0021065K, IMW65R020M2HXKSA1 offers lower gate charge and simpler 3-pin layout but lacks Kelvin source for ultra-high-speed gate control; versus STW65N65DM6, it delivers 3× higher switching frequency capability and 40% lower system-level losses in 100+ kHz designs.

Availability

IMW65R020M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial SMPS requiring stable component supply with full JEDEC industrial qualification and long-lifecycle support.

Supply support for IMW65R020M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ 650 V G2 family, engineered specifically for high-efficiency, high-power-density systems in solar, EV charging, and industrial UPS where SiC's high-temperature capability and low-loss switching are decisive.

FAQ

What is the maximum recommended gate drive voltage for reliable long-term operation?

The datasheet specifies a static gate-source voltage limit of −7 V to +23 V, with transient tolerance up to −10 V/+25 V for ≤500 ns pulses. For robust industrial operation, Infineon recommends V_GS(on) = 18 V and V_GS(off) = 0 V-no negative bias required due to inherent immunity to parasitic turn-on.

Does IMW65R020M2HXKSA1 require an external anti-parallel diode in bridge configurations?

No. Its integrated SiC body diode is fully rated for hard commutation with t_fr = 37.2 ns and Q_fr = 167 nC at 46.9 A, validated per JEDEC industrial standards. External diodes add parasitic inductance and are unnecessary unless extreme reverse recovery softness is required beyond datasheet specs.

How does thermal performance compare between IMW65R020M2HXKSA1 and previous-generation CoolSiC devices?

Thanks to Infineon's .XT interconnection technology, R_th(j–c) is reduced to 0.55 °C/W-~12% lower than first-gen 650 V CoolSiC MOSFETs-enabling either 15% higher power density or 10 °C lower junction temperature at identical power dissipation and heatsink conditions.

Can this MOSFET be used in linear (ohmic) mode operation?

No. The datasheet explicitly states "Linear mode operation is not recommended." Safe operating area (SOA) diagrams show only pulse-rated operation; sustained linear-mode conduction risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA characterization in that region.

IMW65R020M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 46.9A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 9.5mA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2038 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 273W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R020M2HXKSA1 FAQ

1.How can I place an order for IMW65R020M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R020M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R020M2HXKSA1 reliable?

The price and inventory of IMW65R020M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R020M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R020M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R020M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R020M2HXKSA1?

IMW65R020M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R020M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R020M2HXKSA1?

For technical support, including IMW65R020M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R020M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R020M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R020M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R020M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R020M2HXKSA1?

All IMW65R020M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R020M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R020M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R020M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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