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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R026M2HXKSA1

Name: IMW65R026M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R026M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R026M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R026M2HXKSA1.pdf

Description:: IMW65R026M2HXKSA1

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Product details

Overview

IMW65R026M2HXKSA1 from Infineon is a 650 V, 26 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package, designed for high-frequency, high-efficiency power conversion stages. It delivers 215 A peak drain current, 42 nC total gate charge, and ultra-low 314 µJ turn-on switching loss at 400 V, enabling compact, high-power-density designs in EV charging and solar inverters.

For engineers reviewing the IMW65R026M2HXKSA1 datasheet, IMW65R026M2HXKSA1 pinout, IMW65R026M2HXKSA1 application, or IMW65R026M2HXKSA1 equivalent, key selection criteria include its 4.5 V gate threshold voltage, robust body diode with 33 ns forward recovery time, 0.66 °C/W junction-to-case thermal resistance, and compatibility with 0 V turn-off gate drive schemes.

Technical Context

This SiC MOSFET employs Infineon's second-generation trench-based CoolSiC™ technology, featuring a benchmark V_GS(th) of 4.5 V and intrinsic immunity to parasitic turn-on under zero-volt gate drive. Its optimized gate oxide and XT interconnection ensure stable operation up to 175 °C junction temperature.

The device operates with recommended gate drive voltages of 0 V (turn-off) and +18 V (turn-on), supports hard commutation via robust body diode performance, and achieves 10.8 µJ E_oss at 400 V-enabling high-frequency ZVS and soft-switching topologies without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for 400–600 V DC bus systems including EV chargers and industrial UPS.
R_DS(on), typ	26 mΩ at V_GS = 18 V, T_j = 25°C - Enables low conduction loss in high-current PFC and inverter legs.
I_D,pulse	215 A - Supports short-duration overload conditions in motor drives and battery formation equipment.
Q_G,total	42 nC - Low gate charge reduces driver power requirement and enables fast switching with standard gate drivers.
E_on	314 µJ at V_DD = 400 V - Ultra-low turn-on loss improves efficiency in >100 kHz SMPS and solar MPPT stages.
R_th(j-c)	0.66 °C/W - Enables high power dissipation (227 W at T_c = 25°C) with minimal thermal interface resistance.
V_GS(th)	4.5 V (typ) - Ensures reliable turn-on while minimizing risk of spurious activation during noise transients.
t_fr	33 ns - Fast body diode recovery supports bidirectional energy flow in half-bridge and totem-pole PFC without shoot-through risk.

Pinout & Package

IMW65R026M2HXKSA1 uses the PG-TO247-3 through-hole package with isolated tab (drain-connected). The package features copper leadframe, solderable leads, and 60 Ncm mounting torque specification for optimal thermal contact to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-side power terminal	Electrically connected to drain; serves as primary thermal path to heatsink; must be electrically isolated from PCB ground plane.
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <2.9 Ω external series resistance to damp ringing; referenced to source potential.
Pin 3 (Source)	Power return and gate reference	Common node for load current return and gate drive reference; critical for minimizing common-source inductance in high-dI/dt layouts.

Key Features

Feature	Design Value
Ultra-low E_oss	10.8 µJ at 400 V - Reduces capacitive switching loss in resonant converters and enables higher frequency operation without efficiency penalty.
Robust body diode	33 ns t_fr, 129 nC Q_fr - Allows reliable hard-commutation in totem-pole PFC and bidirectional DC-DC without external Si diode.
Zero-V turn-off capability	Immune to parasitic turn-on at V_GS = 0 V - Eliminates need for active negative gate drive in cost-sensitive industrial inverters.
XT interconnection	Enhanced thermal transfer from die to tab - Improves long-term reliability under repeated thermal cycling in EV charging infrastructure.
JEDEC-qualified	Qualified per JESD47 for industrial applications - Confirms lifetime stability under 80% derated operating conditions up to 175 °C.

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase string inverters operating at 100–150 kHz with transformerless topology and integrated leakage current protection.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage and H-bridge inverter leg handling up to 11 kW output.

Use Value: 26 mΩ R_DS(on) and 314 µJ E_on reduce thermal stress and enable air-cooled design at >98.5% weighted efficiency.

Use Scenario: 150–350 kW liquid-cooled charging stations with dual active bridge (DAB) isolation and wide-input-range AC/DC front-end.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge converter operating at 120–200 kHz.

Use Value: 0.66 °C/W R_th(j-c) and 175 °C T_j,max support continuous 200 A RMS operation with <10 K temperature rise above heatsink.

Industrial UPS Systems

Battery Formation Equipment

Use Scenario: Online double-conversion UPS with 400 V DC bus, bi-directional inverter, and 10 ms transfer time requirement.

IC Role / Device Role / Timing Role: Bidirectional switch in four-quadrant inverter stage managing regenerative braking and grid synchronization.

Use Value: Robust body diode with 33 ns t_fr eliminates need for external anti-parallel SiC Schottky, reducing BOM count and layout area by 35%.

Use Scenario: Precision 1–5 kW programmable battery formation units for Li-ion cell manufacturing, requiring ±0.1% current accuracy and <100 µs response time.

IC Role / Device Role / Timing Role: Main power switch in synchronous buck-boost topology controlling charge/discharge current direction and magnitude.

Use Value: 4.5 V V_GS(th) ensures precise gate control under microcontroller PWM with 12-bit DAC resolution, minimizing current ripple during constant-current phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0026120K	R_DS(on) = 26 mΩ, V_DS = 1200 V, TO247-3 package, higher E_on (410 µJ at 600 V)	Targeted at 800–1000 V DC bus systems; over-specified voltage rating increases cost and gate drive complexity for 650 V use cases	Select only if system requires 1200 V blocking margin or future 1000 V architecture scalability
STP65N65DM6AG	R_DS(on) = 27 mΩ, V_DS = 650 V, but Si-based superjunction MOSFET with 3× higher Q_G (120 nC) and slower t_r/t_f	Limited to <60 kHz operation due to higher switching losses; unsuitable for high-frequency PFC or DAB topologies	Acceptable only for cost-sensitive, low-frequency (<50 kHz) industrial motor drives where thermal budget allows larger heatsinks

Compared with C3M0026120K and STP65N65DM6AG, IMW65R026M2HXKSA1 offers optimal balance of 650 V rating, 26 mΩ conduction, and 42 nC gate charge-delivering highest efficiency in 100–200 kHz applications while maintaining JEDEC industrial qualification and zero-V turn-off robustness.

Availability

IMW65R026M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IMW65R026M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-power-density power conversion in renewable energy, e-mobility, and industrial automation systems.

FAQ

What is the maximum recommended gate drive voltage for IMW65R026M2HXKSA1?

The datasheet specifies a maximum static gate-source voltage of +23 V and −7 V, with transient limits of +25 V and −10 V for ≤500 ns pulses. For reliable long-term operation, Infineon recommends using +18 V turn-on and 0 V turn-off voltages-this avoids overstressing the gate oxide while ensuring robust immunity to dv/dt-induced false turn-on.

Does IMW65R026M2HXKSA1 require an external anti-parallel diode in half-bridge configurations?

No. The integrated body diode is fully rated for hard commutation with 33 ns forward recovery time and 129 nC recovery charge, validated per JEDEC industrial standards. It supports bidirectional current flow in totem-pole PFC and DAB converters without external diodes-reducing component count, layout area, and reverse recovery losses.

How does the thermal performance of IMW65R026M2HXKSA1 compare to silicon alternatives?

With a junction-to-case thermal resistance of 0.66 °C/W and 175 °C maximum junction temperature, this SiC MOSFET dissipates 227 W at T_c = 25°C-over 2.5× the power density of comparable 650 V silicon superjunction MOSFETs. Its lower R_DS(on) temperature coefficient also maintains conduction loss stability across wide operating ranges.

Is IMW65R026M2HXKSA1 qualified for automotive applications?

No. This variant is fully qualified per JEDEC JESD47 for industrial applications only. While it shares the same die as automotive-grade variants (e.g., IMW65R026M2HATMA1), the IMW65R026M2HXKSA1 lacks AEC-Q101 stress testing, PPAP documentation, and automotive-specific traceability-making it unsuitable for vehicle powertrain or ADAS systems.

IMW65R026M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 34.5A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 7mA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1499 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R026M2HXKSA1 FAQ

1.How can I place an order for IMW65R026M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R026M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R026M2HXKSA1 reliable?

The price and inventory of IMW65R026M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R026M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R026M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R026M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R026M2HXKSA1?

IMW65R026M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R026M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R026M2HXKSA1?

For technical support, including IMW65R026M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R026M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R026M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R026M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R026M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R026M2HXKSA1?

All IMW65R026M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R026M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R026M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R026M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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