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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R033M2HXKSA1

Name: IMW65R033M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R033M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R033M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R033M2HXKSA1.pdf

Description:: IMW65R033M2HXKSA1

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Product details

Overview

IMW65R033M2HXKSA1 from Infineon is a 650 V, 33 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package, designed as a high-efficiency power switch for hard-switched and resonant topologies. It delivers 174 A peak drain current, 4.5 V gate threshold voltage, and ultra-low 27 µJ turn-off switching loss at 400 V, enabling compact, high-frequency SMPS and EV charging inverters.

For engineers reviewing the IMW65R033M2HXKSA1 datasheet, IMW65R033M2HXKSA1 pinout, IMW65R033M2HXKSA1 application, or IMW65R033M2HXKSA1 equivalent, key selection criteria include its 0.77 °C/W junction-to-case thermal resistance, robust 200 V/ns dv/dt immunity, body diode hard-commutation capability, and compatibility with 0 V turn-off gate drive schemes.

Technical Context

This CoolSiC™ Gen 2 device uses Infineon's SiC trench MOSFET technology with XT interconnection for enhanced thermal performance. Its 4.5 V typical V_GS(th) ensures stable turn-on while suppressing parasitic turn-on during high dv/dt events, and its 65 nC Q_oss at 400 V enables fast, low-loss switching in 100–500 kHz power converters.

The integrated body diode supports unidirectional hard commutation with 31 ns forward recovery time and 109 nC Q_fr, eliminating need for external anti-parallel Si diodes in many PFC and inverter stages. Gate drive flexibility includes 0 V turn-off and 18 V recommended turn-on voltage.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V bus systems including 400 V DC-link with margin
R_DS(on)	33 mΩ @ V_GS = 18 V, T_j = 25°C - Enables <53 A continuous conduction with <1 W conduction loss at 25°C
Q_g	34 nC - Low total gate charge reduces driver power requirement and simplifies gate drive design
E_off	27 µJ @ V_DD = 400 V - Ultra-low turn-off loss supports >200 kHz operation without excessive thermal stress
R_th(j-c)	0.77 °C/W - Enables high-power density mounting on heatsinks with minimal thermal interface resistance
I_D,pulse	174 A - Supports short-term overload handling in motor drives and UPS peak-load conditions
dv/dt immunity	200 V/ns - Ensures reliable operation in high-speed half-bridge configurations without false triggering

Pinout & Package

PG-TO247-3 package with isolated tab (drain-connected), standard 3-pin through-hole outline optimized for high-current, high-thermal-demand applications.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain connection and thermal path	Electrically connected to drain; must be mounted to heatsink with electrically insulating but thermally conductive interface
Pin 1 (Gate)	Control terminal for MOSFET channel	Low-impedance gate input requiring <3.1 Ω internal R_G,int; sensitive to layout-induced ringing
Pin 2 (Source)	Reference node for gate drive and current sensing	Common return path for gate drive loop and power source; critical for minimizing ground bounce
Pin 3 (Source)	Secondary source connection	Provides Kelvin-source sensing path to decouple power and signal source paths, improving gate control accuracy

Key Features

Feature	Design Value
XT interconnection technology	Reduces thermal resistance by ~15% vs. conventional wirebonding, directly improving power cycling lifetime
Benchmark V_GS(th) = 4.5 V	Enables robust noise immunity and eliminates need for negative gate bias in most industrial designs
Body diode hard-commutation rating	Validated for repetitive hard commutation up to 6 A, enabling single-device bidirectional switching in LLC resonant converters
JEDEC-qualified for industrial use	Guarantees reliability under 175°C junction temperature and 80% derating of max ratings per Infineon recommendation
Ultra-low Q_oss (65 nC @ 400 V)	Reduces capacitive turn-on loss and improves light-load efficiency in high-frequency PFC stages

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase 11–22 kW string inverters operating at 100–150 kHz with transformerless topology.

IC Role / Device Role / Timing Role: High-side and low-side main switching device in T-type NPC and H6 bridge configurations.

Use Value: 33 mΩ R_DS(on) and 27 µJ E_off enable >99% weighted efficiency at 200 kHz, reducing heatsink volume by 35% vs. Si IGBTs.

Use Scenario: 15–30 kW modular AC/DC rectifier modules in liquid-cooled charging cabinets.

IC Role / Device Role / Timing Role: Primary switching element in interleaved totem-pole PFC and isolated DC/DC stages.

Use Value: 0.77 °C/W R_th(j-c) and 174 A I_D,pulse support 25 kW continuous output with 60°C case rise, meeting UL 1741 SA thermal limits.

Industrial UPS Systems

High-Power Motor Drives

Use Scenario: Online double-conversion UPS delivering clean 3-phase 400 V output with <20 ms switchover.

IC Role / Device Role / Timing Role: Inverter-stage switch in 3-level ANPC topology with active neutral point clamping.

Use Value: 200 V/ns dv/dt immunity prevents spurious turn-on during rapid load transients, ensuring fault-free 10 ms overload response.

Use Scenario: 75–150 kW servo drives for CNC and robotics with field-oriented control at 15–25 kHz PWM.

IC Role / Device Role / Timing Role: Output bridge switch in dual 3-phase inverter modules driving permanent magnet synchronous motors.

Use Value: Integrated body diode with 31 ns t_fr eliminates external freewheeling diodes, reducing BOM count and PCB area by 12%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0032120K	1200 V rating, 32 mΩ R_DS(on), TO247-4L package with Kelvin source	Higher voltage margin suitable for 800 V battery systems; requires 4-pin gate driver layout	Select when system bus exceeds 600 V or Kelvin-source sensing is mandatory for precision gate control
STPSC30H065D	650 V, 30 mΩ, planar SiC MOSFET, TO247-3, higher Q_g (45 nC)	Lower conduction loss but 32% higher gate charge increases driver losses above 150 kHz	Prefer for lower-frequency (<100 kHz), high-current applications where gate drive simplicity outweighs switching loss penalty

Compared with C3M0032120K and STPSC30H065D, IMW65R033M2HXKSA1 offers optimal balance of 650 V rating, 33 mΩ conduction, 34 nC gate charge, and proven industrial qualification-making it ideal for cost-sensitive, high-frequency 400–600 V systems requiring JEDEC reliability.

Availability

IMW65R033M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IMW65R033M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems operating at frequencies beyond 100 kHz.

FAQ

What is the maximum recommended gate drive voltage for IMW65R033M2HXKSA1?

The datasheet specifies a maximum transient gate-source voltage of 25 V (for ≤500 ns, duty cycle ≤1%) and 23 V for static operation. Infineon recommends 18 V turn-on and 0 V turn-off for optimal trade-off between R_DS(on) reduction and gate oxide reliability. Exceeding 20 V continuously increases risk of gate degradation over extended operation.

Does IMW65R033M2HXKSA1 require a negative gate voltage for reliable turn-off?

No. Its 4.5 V typical gate threshold voltage and robust immunity to parasitic turn-on allow safe 0 V turn-off in hard-switched applications. Negative gate bias is unnecessary unless operating in extreme dv/dt environments (>300 V/ns) or with poorly controlled gate loops-verified by Infineon's application note AN2019-05.

Can the internal body diode replace an external freewheeling diode in totem-pole PFC?

Yes. The device is fully characterized for hard commutation with 31 ns forward recovery time and 109 nC Q_fr. It supports bidirectional conduction in continuous conduction mode (CCM) totem-pole PFC without external diodes, provided layout minimizes stray inductance and gate drive maintains tight timing control.

What thermal interface material is recommended for the tab-mounted heatsink?

Infineon specifies a maximum mounting torque of 60 Ncm for M3/M3.5 screws and recommends thermally conductive, electrically isolating materials such as Bergquist Sil-Pad 900S or Henkel Loctite ECCOBOND G100. Minimum thermal resistance target is 0.15 °C·in²/W to ensure junction temperature stays below 175°C at rated current and ambient.

IMW65R033M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 27.9A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 5.7mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1214 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 194W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R033M2HXKSA1 FAQ

1.How can I place an order for IMW65R033M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R033M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R033M2HXKSA1 reliable?

The price and inventory of IMW65R033M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R033M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R033M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R033M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R033M2HXKSA1?

IMW65R033M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R033M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R033M2HXKSA1?

For technical support, including IMW65R033M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R033M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R033M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R033M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R033M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R033M2HXKSA1?

All IMW65R033M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R033M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R033M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R033M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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