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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R050M2HXKSA1

Name: IMW65R050M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R050M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R050M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R050M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMW65R050M2HXKSA1 from Infineon is a 650 V, 50 mΩ SiC MOSFET in PG-TO247-3 package, designed as a high-efficiency power switch for hard-switched topologies. It features a 4.5 V gate threshold voltage, 22 nC total gate charge, and 6.3 μJ turn-off switching loss at 400 V, enabling high-frequency operation in solar inverters and EV charging systems.

For engineers reviewing the IMW65R050M2HXKSA1 datasheet, IMW65R050M2HXKSA1 pinout, IMW65R050M2HXKSA1 application, or IMW65R050M2HXKSA1 equivalent, key selection criteria include its 175 °C max junction temperature, robust body diode with 26.8 ns forward recovery time, ultra-low R_DS(on) drift over temperature, and compatibility with 0 V turn-off gate drive to prevent parasitic turn-on.

Technical Context

This CoolSiC™ G2 device uses Infineon's second-generation silicon carbide trench MOSFET technology with XT interconnection for enhanced thermal performance. Its 650 V blocking capability and 50 mΩ typical R_DS(on) at 25°C support high-power-density designs requiring low conduction and switching losses.

The MOSFET operates with a recommended V_GS(on) of 18 V and V_GS(off) of 0 V, delivering 113 A peak drain current and 105 mJ single-pulse avalanche energy. Its dynamic parameters-including 47 nC Q_oss at 400 V and 109 μJ E_on-are optimized for hard-commutation in half-bridge configurations without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400–600 V DC bus applications like PV string inverters and 800 V EV chargers with margin.
R_DS(on),typ	50 mΩ at 25°C - Delivers low conduction loss at rated current, reducing heatsink requirements in 10–30 kW systems.
Q_g,total	22 nC - Supports efficient gate driving with standard 1–2 A peak drivers, minimizing driver power consumption.
E_off	6.3 μJ at 400 V - Enables >100 kHz switching in LLC and phase-shifted full-bridge converters without excessive loss penalty.
T_j,max	175 °C - Allows sustained operation under high ambient conditions in enclosed UPS or motor drive enclosures.
V_GS(th)	4.5 V (typ) - Provides noise immunity and stable turn-on behavior while remaining compatible with standard 5 V logic-level gate drivers.
I_D,pulse	113 A - Supports short-term overload handling in grid-tied inverters during fault transients or startup surges.

Pinout & Package

IMW65R050M2HXKSA1 is housed in a PG-TO247-3 package with isolated tab (drain-connected). The package features industry-standard mechanical dimensions and solderable leads suitable for wave and reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-side power terminal	Electrically connected to drain; serves as primary heat path to heatsink; requires isolation from PCB ground plane.
Pin 1 (Gate)	Control input	Low-impedance gate node; must be routed with minimized loop inductance to suppress oscillation during fast switching.
Pin 2 (Source)	Reference return for gate drive and current sensing	Shared source node for gate control and shunt-based current monitoring; critical for accurate high-side sensing.
Pin 3 (Source)	Power return path	Duplicate source connection to reduce source inductance and improve switching stability in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low switching losses	109 μJ E_on + 6.3 μJ E_off at 400 V enables >150 kHz operation in high-efficiency SMPS without forced air cooling.
Benchmark V_GS(th) = 4.5 V	Ensures reliable turn-on above common noise thresholds while avoiding unintended activation from dv/dt coupling.
Robust body diode	26.8 ns t_fr and 79 nC Q_frm allow safe hard commutation in bidirectional topologies like active rectifiers and matrix converters.
XT interconnection technology	Reduces thermal resistance to 0.98 °C/W (j-c), improving power cycling lifetime by up to 3× vs. conventional wire-bonded SiC MOSFETs.

Applications

Solar PV String Inverter

EV DC Fast Charging Module

Use Scenario: High-voltage DC/AC conversion stage operating at 1000 V DC input with 50–100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary high-side switching element in three-phase T-type or NPC inverter leg.

Use Value: 50 mΩ R_DS(on) and 6.3 μJ E_off reduce system conduction and switching losses by 12% versus previous-gen SiC devices, enabling >99% peak efficiency.

Use Scenario: Isolated DC/DC stage converting 400–800 V battery voltage to 400–800 V output for multi-port charging stations.

IC Role / Device Role / Timing Role: Synchronous rectifier and primary switch in dual-active-bridge topology.

Use Value: 175 °C T_j,max and robust body diode support continuous 95 °C ambient operation with 30% higher power density than Si IGBT alternatives.

Industrial UPS Inverter

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Online double-conversion UPS delivering clean 230 V AC from 750 V DC bus with <10 ms transfer time.

IC Role / Device Role / Timing Role: Output stage switch in full-bridge inverter with unidirectional power flow and regenerative braking capability.

Use Value: 105 mJ single-pulse avalanche energy rating ensures survivability during load dump events and grid fault ride-through without snubber circuits.

Use Scenario: Bi-directional DC/DC converter interfacing 48–800 V battery stacks with 1500 V DC microgrid backbone.

IC Role / Device Role / Timing Role: Main power switch in interleaved buck-boost stage supporting ±100 A bidirectional current.

Use Value: 0 V turn-off gate drive compatibility eliminates need for negative bias supplies, simplifying gate driver design and reducing BOM cost by ~15%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65H050FD	650 V, 50 mΩ, TO247-4L package with Kelvin source; 25 nC Q_g; 150 °C T_j,max	Requires 4-pin layout and Kelvin-source routing; better gate control but higher PCB complexity	Select when precise gate control and reduced Miller feedback are prioritized over layout simplicity.
C3M0065065K	650 V, 65 mΩ, TO247-3; 19 nC Q_g; 175 °C T_j,max; lower R_DS(on) drift but higher conduction loss	Higher on-resistance increases conduction loss at >20 A; suited for lower-current, higher-frequency designs	Select when switching loss dominates and average current remains below 15 A.

Compared with STP65H050FD and C3M0065065K, IMW65R050M2HXKSA1 offers optimal balance of low R_DS(on), moderate gate charge, and proven ruggedness in hard-commutated industrial systems-making it preferred for solar inverters and EV charging where reliability and thermal margin are critical.

Availability

IMW65R050M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMW65R050M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy and electric mobility applications where thermal robustness and switching performance are paramount.

FAQ

What is the maximum recommended gate drive voltage for reliable operation?

The datasheet specifies a maximum static gate-source voltage of +23 V and transient limit of +25 V for ≤500 ns pulses. For long-term reliability, Infineon recommends using 18 V turn-on and 0 V turn-off, which avoids overstressing the gate oxide while ensuring robust immunity to dv/dt-induced false triggering in high-speed hard-switched circuits.

Does IMW65R050M2HXKSA1 require a negative gate voltage for turn-off?

No. This device is qualified for robust 0 V turn-off operation, eliminating the need for negative gate bias. Its 4.5 V gate threshold and low Miller capacitance enable stable off-state behavior even under high dv/dt conditions, simplifying gate driver design and reducing component count in industrial power supplies.

How does the internal body diode perform in hard-commutation scenarios?

The integrated body diode is characterized for hard commutation with 26.8 ns forward recovery time and 79 nC recovery charge at 25°C. It supports bidirectional current flow in totem-pole PFC and active rectifier topologies without external diodes, and has been validated per JEDEC stress tests for repetitive avalanche and UIS events.

What thermal interface material is recommended for the drain tab?

Infineon specifies a mounting torque of 60 Ncm for M3/M3.5 screws and recommends thermally conductive, electrically isolating interface materials such as ceramic-filled silicone pads (e.g., Laird Tflex 400) or phase-change thermal pads (e.g., Henkel Gap Pad VT). Thermal resistance from junction to case is 0.98 °C/W, so interface resistance must remain below 0.2 °C/W to maintain T_j ≤ 175 °C at full load.

IMW65R050M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 46mOhm @ 18.2A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 3.7mA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 153W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R050M2HXKSA1 FAQ

1.How can I place an order for IMW65R050M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R050M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R050M2HXKSA1 reliable?

The price and inventory of IMW65R050M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R050M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R050M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R050M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R050M2HXKSA1?

IMW65R050M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R050M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R050M2HXKSA1?

For technical support, including IMW65R050M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R050M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R050M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R050M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R050M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R050M2HXKSA1?

All IMW65R050M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R050M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R050M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R050M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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