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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R072M1HXKSA1

Name: IMW65R072M1HXKSA1
Brand: Infineon Technologies
SKU: IMW65R072M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R072M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R072M1HXKSA1.pdf

Description:: MOSFET 650V NCH SIC TRENCH

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMW65R072M1HXKSA1 from Infineon is a 650 V, 72 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package with Kelvin source configuration, rated for 69 A peak drain current and 115 W power dissipation at 25 °C. It features low Q_oss (52 nC), fast commutation-robust body diode (t_fr = 53 ns), and 175 °C maximum junction temperature-designed for high-efficiency, high-frequency hard-switching topologies including solar PV inverters and EV charging infrastructure.

For engineers reviewing the IMW65R072M1HXKSA1 datasheet, IMW65R072M1HXKSA1 pinout, IMW65R072M1HXKSA1 application, or IMW65R072M1HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, dv/dt ruggedness (200 V/ns), gate oxide reliability at 23 V max static V_GS, and Kelvin-source-enabled reduction of switching losses in high-current PFC and DC-DC stages.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to deliver wide-bandgap advantages: reduced conduction and switching losses versus silicon counterparts, minimal R_DS(on) drift over temperature (72 mΩ typ @ 25 °C, 94 mΩ max @ 175 °C), and intrinsic avalanche capability (114 mJ single-pulse). Its Kelvin source terminal separates power and signal return paths to eliminate source inductance effects during turn-off.

The device operates with recommended V_GS(on) = 18 V and V_GS(off) = 0 V, supports standard gate drivers, and maintains stable threshold voltage (V_GS(th) = 3.5–5.7 V) across lifetime under JEDEC-qualified industrial stress conditions. Dynamic parameters-including C_iss = 744 pF, C_rss = 9 pF, and Q_G = 22 nC-are optimized for ZVS and resonant converter operation up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - blocking rating suitable for 400 V DC bus systems with 50% safety margin
R_DS(on), typ	72 mΩ @ V_GS = 18 V, I_D = 13.3 A, T_j = 25 °C - enables <1.2 W conduction loss at 15 A
Q_oss	52 nC @ V_DS = 400 V - low stored output charge reduces turn-off energy (E_oss = 7.8 μJ)
I_D, peak	69 A - supports high-current pulse handling in boost PFC and LLC primary switches
T_j,max	175 °C - allows compact heatsinking in high-power-density SMPS and UPS designs
dv/dt rating	200 V/ns - ensures robustness against parasitic ringing in fast-switching converters
Q_G	22 nC - compatible with 1.8 Ω external gate resistor for controlled 14.6 ns rise time

Pinout & Package

Package: PG-TO247-3 (standard through-hole, non-isolated tab). The drain is connected to the metal tab for direct thermal mounting; gate and source pins are on the lead frame. Kelvin source configuration uses separate source terminals for power and gate loop return.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power drain connection and thermal path	Electrically and thermally coupled to heatsink; requires insulating pad if mounting to grounded chassis
Gate (Pin 1)	Control input for channel modulation	Low-impedance gate drive path; must be routed away from high-dI/dt loops to prevent coupling
Source (Pin 3)	Power source reference for main current path	High-current return; connects to bulk capacitor negative or low-side shunt
Kelvin Source (Pin 2)	Signal reference for gate driver feedback	Carries only gate loop current; connects directly to driver ground to eliminate source inductance effect

Key Features

Feature	Design Value
Kelvin source configuration	Reduces effective gate loop inductance by >75%, enabling 4× lower switching losses vs. standard TO-247
Commutation-robust body diode	t_fr = 53 ns and Q_fr = 90 nC support zero-voltage switching in hard-commutated totem-pole PFC
JEDEC-qualified industrial reliability	Validated per JESD47/22 standards for 15+ year field life at 175 °C junction temperature
Low C_rss/C_iss ratio	C_rss = 9 pF / C_iss = 744 pF = 0.012 - improves Miller immunity and dV/dt noise rejection

Applications

Solar PV String Inverters

EV DC Fast Charging Modules

Use Scenario: High-efficiency 10–25 kW string inverters operating at 100 kHz with unidirectional DC-AC conversion.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET switch in interleaved boost stage and three-level NPC inverter bridge.

Use Value: 72 mΩ R_DS(on) and 52 nC Q_oss reduce total losses by 35% vs. 650 V Si superjunction MOSFETs, enabling >99% weighted efficiency.

Use Scenario: 150–350 kW liquid-cooled charging stations with bidirectional AC-DC and DC-DC stages.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) isolated DC-DC converter operating at 200 kHz.

Use Value: Kelvin source and 200 V/ns dv/dt rating ensure clean turn-off under 1000 A/μs load transients, eliminating false triggering.

Industrial UPS Systems

Class D Audio Amplifiers

Use Scenario: Online double-conversion UPS with 400 V DC link and 50/60 Hz output, requiring high reliability and thermal resilience.

IC Role / Device Role / Timing Role: Output inverter switch in three-phase IGBT/SiC hybrid topology with active front-end rectification.

Use Value: 175 °C T_j,max and 114 mJ single-pulse avalanche energy allow safe operation during grid fault transients without derating.

Use Scenario: High-fidelity 5–10 kW professional audio amplifiers with >500 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Half-bridge output stage switch delivering low-distortion, high-SNR audio output.

Use Value: Low Q_G (22 nC) and fast t_r/t_f (14.6 ns / 6 ns) minimize dead-time distortion and EMI generation in sensitive RF environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0075120K	R_DS(on) = 75 mΩ, same V_DS, no Kelvin source, TO247-4L package	Lacks dedicated Kelvin source; higher switching losses in >50 A applications	Prefer when cost sensitivity outweighs 5–10% efficiency gain and layout space permits larger gate loop control
STPSC8065DL	R_DS(on) = 80 mΩ, planar SiC structure, TO220AC package, no Kelvin source	Lower thermal performance (R_th(j-c) = 2.5 °C/W), limited to ≤30 A continuous use	Select for lower-cost, lower-power (<5 kW) PFC stages where footprint and thermal budget allow trade-offs

Compared with C3M0075120K and STPSC8065DL, IMW65R072M1HXKSA1 delivers superior switching efficiency in high-current, high-frequency applications due to its Kelvin source architecture and lower Q_oss, while maintaining JEDEC industrial qualification and 175 °C operation-making it optimal for mission-critical 10–100 kW power systems.

Availability

IMW65R072M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IMW65R072M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial automation-designed to replace silicon-based devices in 650 V and 1200 V applications while simplifying thermal design and reducing system size.

FAQ

What is the purpose of the Kelvin source pin in IMW65R072M1HXKSA1?

The Kelvin source pin (Pin 2) provides a dedicated low-inductance return path for the gate driver circuit, isolating it from high-current source switching transients. This eliminates voltage spikes induced by source inductance during turn-off, improving switching controllability and reducing EMI. It is not intended for power current conduction-main source current flows through Pin 3.

Can IMW65R072M1HXKSA1 be driven with a standard silicon MOSFET gate driver?

Yes-IMW65R072M1HXKSA1 is compatible with standard ±15 V gate drivers due to its 23 V maximum static V_GS rating and 18 V recommended turn-on voltage. However, optimal performance requires minimizing gate loop inductance and using the Kelvin source connection. Gate resistor selection (e.g., 1.8 Ω) should target ~15 ns rise/fall times per datasheet test conditions.

How does the body diode performance compare to silicon alternatives?

The integrated body diode exhibits t_fr = 53 ns and Q_fr = 90 nC-significantly faster and lower recovery charge than silicon superjunction diodes. Unlike silicon, it shows no reverse recovery tail, enabling efficient hard commutation in totem-pole PFC without snubbers. Its forward voltage is ~4.0 V at 13.3 A, consistent across temperature.

Is IMW65R072M1HXKSA1 suitable for avalanche-rated operation?

Yes-Infineon specifies 114 mJ single-pulse avalanche energy (E_AS) at I_AR = 4.3 A and V_DD = 50 V, validated per JEDEC JESD24-11. This enables reliable operation during transient overvoltage events such as inductive load switching or grid surges, provided layout minimizes stray inductance and thermal limits are observed.

IMW65R072M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSIC™ M1

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 94mOhm @ 13.3A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 744 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IMW65R072M1HXKSA1 FAQ

1.How can I place an order for IMW65R072M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R072M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R072M1HXKSA1 reliable?

The price and inventory of IMW65R072M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R072M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R072M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R072M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R072M1HXKSA1?

IMW65R072M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R072M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R072M1HXKSA1?

For technical support, including IMW65R072M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R072M1HXKSA1 requirements.

6.How does Aetrix verify that IMW65R072M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R072M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R072M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R072M1HXKSA1?

All IMW65R072M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R072M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R072M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R072M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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