Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R010M2HXKSA1

Name: IMZA65R010M2HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R010M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMZA65R010M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R010M2HXKSA1.pdf

Description:: IMZA65R010M2HXKSA1

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:400

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMZA65R010M2HXKSA1 from Infineon is a 650 V, 10.0 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package, designed for high-efficiency power conversion in hard-switching and resonant topologies. It delivers 565 A peak drain current, ultra-low Q_oss (212 nC at 400 V), and benchmark V_GS(th) of 4.5 V, enabling robust gate control and immunity to parasitic turn-on in EV charging and solar inverters.

For engineers reviewing the IMZA65R010M2HXKSA1 datasheet, IMZA65R010M2HXKSA1 pinout, IMZA65R010M2HXKSA1 application, or IMZA65R010M2HXKSA1 equivalent, key selection criteria include its 0.34 °C/W R_th(j-c), 4-pin source-separated configuration, avalanche-rated ruggedness (533 mJ single-pulse), and compatibility with 0 V turn-off gate driving schemes.

Technical Context

This CoolSiC™ Gen 2 device uses trench-based SiC technology with XT interconnection for superior thermal performance. Its 4-pin TO247 layout isolates driver source (Pin 3) from power source (Pin 2), eliminating shoot-through risk during high-dv/dt switching and enabling precise gate control under fast transient conditions.

The MOSFET features a body diode validated for hard commutation, with forward recovery time as low as 19 ns and peak recovery current up to 40 A. Its dynamic parameters-including 216 μJ turn-on and 371 μJ turn-off losses at 400 V/92.1 A-are optimized for high-frequency operation above 100 kHz in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V bus systems like EV DC fast chargers and 1500 V PV string inverters.
R_DS(on)	10.0 mΩ @ V_GS = 18 V, T_j = 25°C - Enables <1.5 W conduction loss at 400 A, supporting high-current motor drives.
Q_g	112 nC - Low total gate charge reduces driver power requirement and enables use with standard 1–2 A gate drivers.
E_oss	28.8 μJ @ 400 V - Ultra-low output energy minimizes turn-off loss and improves efficiency in ZVS circuits.
R_th(j-c)	0.34 °C/W - Enables >400 W continuous power dissipation with standard heatsink mounting, critical for compact UPS designs.
I_D,pulse	565 A - Supports short-duration overload handling in industrial motor drives without derating.
V_GS(th)	4.5 V (typ) - Ensures reliable turn-on with 5 V logic-level drivers and prevents false triggering during noise transients.

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated driver source terminal for enhanced gate control integrity and reduced common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Electrically connected to die drain; mounted to heatsink for thermal and electrical path to system ground/bus.
Pin 1 (Drain)	Drain terminal	Secondary drain connection for low-inductance PCB routing; used in parallel with tab in high-frequency layouts.
Pin 2 (Power Source)	Power return path for load current	Carries full load current back to source rail; must be routed with minimal loop area to reduce EMI.
Pin 3 (Driver Source)	Reference for gate drive signal	Isolated from power source to eliminate gate voltage error caused by source inductance during switching transitions.
Pin 4 (Gate)	Control input	Receives gate drive signal; requires low-inductance connection to driver IC to preserve fast edge fidelity.

Key Features

Feature	Design Value
Source-separated 4-pin layout	Eliminates gate voltage distortion during high di/dt switching, enabling stable operation without external negative gate bias.
Benchmark V_GS(th) = 4.5 V	Guarantees clean turn-on with 5 V microcontrollers and avoids unintended conduction during system startup or fault recovery.
Robust body diode with t_fr = 19 ns	Supports zero-voltage switching in bidirectional converters and reduces reverse recovery losses in PFC stages.
XT interconnection technology	Reduces thermal resistance by 15% vs. prior Gen 1, allowing 10–15°C lower junction temperature at same power level.
JEDEC-qualified for industrial use	Validated for 15-year lifetime at T_j ≤ 150°C, meeting reliability requirements for solar inverters and UPS systems.

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase string inverters operating at 100–200 kHz with 1500 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in T-type NPC or active neutral-point-clamped (ANPC) inverter leg.

Use Value: 10.0 mΩ R_DS(on) and 28.8 μJ E_oss enable >99.1% peak efficiency while maintaining <100°C junction rise at 50 kW per module.

Use Scenario: 150–350 kW liquid-cooled charging stations using dual active bridge (DAB) isolation with 1000 V bus.

IC Role / Device Role / Timing Role: Primary-side switch in DAB half-bridge, operating at 150–300 kHz with soft-switching.

Use Value: 0.34 °C/W R_th(j-c) and 565 A pulse rating allow 200 kW per module with <120°C T_j under 400 A RMS load.

Energy Storage Systems

Industrial Motor Drives

Use Scenario: Bi-directional DC/DC converter for battery formation and grid-support applications with 800 V nominal bus.

IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in interleaved buck-boost stage.

Use Value: Body diode ruggedness (533 mJ avalanche energy) and 175°C max T_j ensure safe operation during regenerative braking surges and fault clearing.

Use Scenario: 75–200 kW variable-frequency drives for HVAC compressors and pumps using space-vector PWM.

IC Role / Device Role / Timing Role: Inverter leg switch in 2-level or 3-level topology with active gate control.

Use Value: 4-pin source separation eliminates need for complex gate driver compensation, reducing BOM count by two isolated gate drivers per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0010065K	R_DS(on) = 10.5 mΩ, Q_g = 120 nC, R_th(j-c) = 0.39 °C/W, TO247-4	Higher conduction and switching losses; less thermally efficient in high-power density designs	Prefer when legacy design uses Cree/ Wolfspeed reference designs or existing thermal interface materials are optimized for higher R_th.
STW65N65DM6	R_DS(on) = 11.5 mΩ, Q_g = 135 nC, R_th(j-c) = 0.42 °C/W, TO247-4	Lower avalanche energy (320 mJ), no dedicated driver source pin	Select only for cost-sensitive industrial drives where 0 V turn-off immunity is not required and thermal margin exceeds 25°C.

Compared with C3M0010065K and STW65N65DM6, IMZA65R010M2HXKSA1 offers the lowest R_th(j-c) and highest avalanche ruggedness, making it optimal for thermally constrained, high-reliability applications such as outdoor-mounted solar inverters and liquid-cooled EV chargers where long-term stability under partial-load cycling is critical.

Availability

IMZA65R010M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial motor drives requiring stable component supply across multi-year production programs.

Supply support for IMZA65R010M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density power conversion in renewable energy and electric mobility systems where thermal performance and switching robustness are non-negotiable.

FAQ

What is the maximum recommended gate drive voltage for IMZA65R010M2HXKSA1?

The absolute maximum gate-source voltage is 25 V for transient conditions (≤500 ns, ≤1% duty cycle), but Infineon specifies 18 V as the recommended turn-on voltage. Operating above 18 V provides no significant R_DS(on) improvement and increases gate oxide stress, so 15–18 V is the optimal range for reliability and efficiency balance.

Can Pin 2 (Power Source) and Pin 3 (Driver Source) be shorted together?

No-Infineon explicitly warns that exchanging or shorting these pins may cause malfunction. Pin 3 is the dedicated reference for gate drive signals and must remain isolated from high-current return paths. Shorting introduces gate voltage error due to source inductance, risking shoot-through or oscillation during hard switching.

Is IMZA65R010M2HXKSA1 qualified for automotive applications?

No-it is fully qualified per JEDEC JESD47 for industrial applications only, with operating junction temperature rated from –55°C to +175°C. Automotive qualification (AEC-Q101) is not claimed in the datasheet, and no automotive-specific stress testing or failure analysis reports are provided by Infineon for this part number.

What is the significance of the "M2" in the part number IMZA65R010M2HXKSA1?

The "M2" denotes CoolSiC™ Generation 2 technology-Infineon's second-generation SiC trench MOSFET process featuring improved channel mobility, reduced gate oxide field, and enhanced body diode ruggedness over Gen 1. It reflects verified improvements in Q_g/R_DS(on) ratio and hard commutation capability, not just a date code or package variant.

IMZA65R010M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 144A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 92.1A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 18.7mA

Gate Charge (Qg) (Max) @ Vgs:: 112 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 4001 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 440W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-8

IMZA65R010M2HXKSA1 FAQ

1.How can I place an order for IMZA65R010M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R010M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R010M2HXKSA1 reliable?

The price and inventory of IMZA65R010M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R010M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R010M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R010M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R010M2HXKSA1?

IMZA65R010M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R010M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R010M2HXKSA1?

For technical support, including IMZA65R010M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R010M2HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R010M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R010M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R010M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R010M2HXKSA1?

All IMZA65R010M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R010M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R010M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R010M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …