Infineon Technologies IMZA65R030M1HXKSA1

Overview

IMZA65R030M1HXKSA1 from Infineon is a 650 V, 30 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with Kelvin source configuration. It delivers 143 A peak drain current, 114 nC output charge at 400 V, and 17.2 μJ switching energy-enabling high-efficiency hard-switching topologies such as solar PV inverters and EV charging infrastructure operating up to 175 °C junction temperature.

For engineers reviewing the IMZA65R030M1HXKSA1 datasheet, IMZA65R030M1HXKSA1 pinout, IMZA65R030M1HXKSA1 application, or IMZA65R030M1HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, commutation-robust body diode Q_rr, gate oxide reliability at 23 V_GS, and Kelvin-source–enabled low switching losses in high-frequency SMPS designs.

Technical Context

This CoolSiC™ M1 generation device uses trench-gate SiC technology optimized for high-current, high-voltage switching. Its 30 mΩ typical R_DS(on) remains stable across temperature, and its 114 nC Q_oss at 400 V enables efficient operation in 40–100 kHz hard-switched converters.

The PG-TO247-4 package integrates a dedicated driver source terminal (Pin 3), decoupling gate loop inductance from power return paths. This architecture reduces switching losses by up to 4× versus standard 3-pin TO247, while maintaining compatibility with industry-standard gate drivers rated for ±25 V transient voltage.

Key Specifications

Pinout & Package

Package: PG-TO247-4 (Kelvin source), thermally enhanced through-hole package with isolated tab (Drain), four leads: Pin 1 = Drain, Pin 2 = Power Source, Pin 3 = Driver Source, Pin 4 = Gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0030065K and STW65N65DM6, IMZA65R030M1HXKSA1 provides superior high-frequency efficiency via Kelvin source and lower Q_oss, making it optimal for next-generation 70–100 kHz solar and EV charging systems where thermal density and system size are critical constraints.

Availability

IMZA65R030M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and uninterruptible power supplies requiring stable component supply under extended industrial temperature and high-reliability qualification.

Supply support for IMZA65R030M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ M1 trench-based SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems operating at elevated temperatures and frequencies.

FAQ

What is the maximum allowable gate-source voltage for continuous operation?

The maximum continuous gate-source voltage is 23 V, per Table 2 of the datasheet. Exceeding this value risks permanent degradation of the gate oxide. Transient spikes up to 25 V are permitted for ≤1% duty cycle, but gate driver designs must include clamping (e.g., TVS diode) to ensure compliance with IPC-9592B standards.

Can the power source (Pin 2) and driver source (Pin 3) be interchanged in layout?

No-interchanging Pins 2 and 3 violates the internal Kelvin source architecture and causes uncontrolled gate voltage overshoot, leading to erratic switching and potential device failure. The datasheet explicitly warns that their exchange may cause malfunction; PCB layout must maintain strict separation with dedicated low-inductance routing for each.

How does the body diode performance compare to discrete SiC Schottky diodes?

This device's integrated body diode has Q_rr = 186 nC and t_fr = 37 ns at 29.5 A, which is slower and higher-loss than discrete 650 V SiC Schottky diodes (Q_rr ≈ 0 nC). However, its soft recovery enables reliable operation in hard-commutated totem-pole PFC without reverse-recovery-induced shoot-through, unlike Si IGBTs.

Is thermal resistance R_th(j–c) measured with standard mounting conditions?

Yes-R_th(j–c) = 0.76 °C/W is measured under JEDEC JESD51-14 compliant conditions: 1.5 mm thick copper baseplate, 0.1 mm thermal interface material, and 50 Ncm torque applied to M3 screws. Deviations in mounting pressure or interface material thickness will linearly increase actual thermal resistance in end-application assemblies.