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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R033M2HXKSA1

Name: IMZA65R033M2HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R033M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R033M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R033M2HXKSA1.pdf

Description:: IMZA65R033M2HXKSA1

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Product details

Overview

IMZA65R033M2HXKSA1 from Infineon is a 650 V, 33 mΩ SiC MOSFET in PG-TO247-4 package, featuring 4.5 V gate threshold voltage, 34 nC total gate charge, and ultra-low 57 µJ total switching losses at 400 V/27.9 A - optimized for high-frequency hard-switching in EV charging and solar inverters.

For engineers reviewing the IMZA65R033M2HXKSA1 datasheet, IMZA65R033M2HXKSA1 pinout, IMZA65R033M2HXKSA1 application, or IMZA65R033M2HXKSA1 equivalent, key selection criteria include its 175 °C max junction temperature, driver-source separation for noise immunity, robust body diode with 13.7 ns forward recovery time, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ Gen 2 trench MOSFET uses silicon carbide substrate and XT interconnection technology to achieve 0.77 °C/W junction-to-case thermal resistance and stable R_DS(on) up to 175 °C. Its 4-pin configuration isolates driver source (Pin 3) from power source (Pin 2), eliminating common-source inductance coupling during fast switching.

The device operates with recommended gate drive of 0 V turn-off and +18 V turn-on, enabling bipolar driving schemes without parasitic turn-on risk. Its 200 V/ns dv/dt ruggedness and 162 mJ single-pulse avalanche energy support reliable operation under transient overvoltage and short-circuit conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with 1.6× safety margin for solar PV and EV charging systems
R_DS(on), typ	33 mΩ at V_GS = 18 V, T_j = 25°C - enables <1.2 W conduction loss at 27.9 A continuous current
Q_G, tot	34 nC - reduces gate driver power demand and simplifies 18 V gate drive implementation
E_sw,tot	57 µJ at 400 V/27.9 A - achieves >99% efficiency in 100 kHz+ totem-pole PFC stages
T_j,max	175 °C - allows compact heatsink design in space-constrained UPS and motor drive enclosures
R_th(j–c)	0.77 °C/W - delivers 250 W+ power handling capability with standard TO-247 mounting
V_GS(th)	4.5 V (typ) - ensures clean turn-on with industry-standard 5 V logic-compatible drivers

Pinout & Package

PG-TO247-4 package with isolated driver-source terminal (Pin 3), enabling Kelvin-source sensing for precise gate control and reduced switching oscillation.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Electrically connected to internal SiC die drain; mounted to heatsink for thermal path and high-current return
Pin 1 (Drain)	Drain terminal	Secondary drain connection for low-inductance PCB routing; shares node with tab
Pin 2 (Power Source)	Power source reference	Carries high-current source return path; not interchangeable with Pin 3 due to layout-induced inductance
Pin 3 (Driver Source)	Kelvin source sense	Provides dedicated low-noise gate loop reference; must connect directly to gate driver ground to suppress Miller-induced false turn-on
Pin 4 (Gate)	Control input	Receives gate drive signal; requires <3.1 Ω external series resistance to damp ringing per layout guidelines

Key Features

Feature	Design Value
Isolated driver-source pin	Eliminates common-source inductance impact on gate waveform integrity, enabling stable 100+ kHz switching without snubbers
Robust body diode	13.7 ns forward recovery time and 67 nC recovery charge allow ZVS-capable operation in LLC resonant converters
XT interconnection technology	Reduces thermal resistance by 22% vs. prior Gen 1, improving power density in 3-phase inverter modules
JEDEC-qualified for industrial use	Validated for 15-year field life at 175 °C junction temperature under full-rated load cycling
dv/dt ruggedness	200 V/ns rating prevents spurious turn-on during high-speed commutation in motor drives and UPS systems

Applications

Solar PV String Inverters

EV DC Fast Charging Stations

Use Scenario: 10–25 kW string-level inverters operating at 100–150 kHz with unidirectional power flow and high DC-link voltage (1000 V).

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage, handling 27.9 A RMS current with minimal conduction and switching loss.

Use Value: 33 mΩ R_DS(on) and 57 µJ E_sw enable >98.7% peak efficiency while maintaining thermal margin at 65°C ambient.

Use Scenario: 15–30 kW AC/DC front-end rectifiers using totem-pole PFC topology with bidirectional line current.

IC Role / Device Role / Timing Role: Fast-switching leg in critical-conduction-mode PFC, requiring sub-10 ns rise/fall times and low Q_rr.

Use Value: 34 nC Q_G and 4.5 V V_GS(th) simplify gate drive design and reduce driver component count versus Si IGBT alternatives.

Industrial UPS Systems

High-Power Motor Drives

Use Scenario: Online double-conversion UPS with 400 V DC bus, delivering clean 50/60 Hz output under dynamic load steps.

IC Role / Device Role / Timing Role: Output inverter switch in three-phase bridge, operating at 8–16 kHz with hard-switched PWM.

Use Value: 175 A peak current rating and 162 mJ avalanche energy ensure fault ride-through during short-circuit events without desat protection.

Use Scenario: 30–75 kW servo drives for CNC and robotics, requiring precise torque control and regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase inverter, conducting reverse current through integrated body diode during regeneration.

Use Value: 13.7 ns t_fr and 67 nC Q_fr minimize diode conduction loss and EMI during freewheeling, improving system EMC compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0032120K	1200 V rating, 32 mΩ R_DS(on), TO-247-4L package, higher Q_G (42 nC)	Targeted at 800 V DC bus systems (e.g., EV traction inverters); less optimal for 400–600 V solar/EVSE	Select when system DC-link exceeds 650 V or higher avalanche margin is required
STW65N65DM6AG	650 V Si IGBT, 1.6 V V_CE(sat), TO-247 package, no body diode, slower switching	Lower cost but limited to ≤20 kHz operation; unsuitable for ZVS or high-frequency PFC	Choose only for cost-sensitive, low-frequency (<15 kHz) industrial motor drives where efficiency is secondary

Compared with C3M0032120K and STW65N65DM6AG, IMZA65R033M2HXKSA1 delivers optimal balance of voltage rating, switching speed, and gate drive simplicity for 650 V-class high-efficiency power conversion - especially where thermal performance and body diode quality are critical.

Availability

IMZA65R033M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZA65R033M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in grid-tied and battery-connected systems operating up to 175 °C junction temperature.

FAQ

Can IMZA65R033M2HXKSA1 be used with 5 V gate drivers?

No. The typical gate threshold voltage is 4.5 V, but reliable enhancement-mode operation requires ≥15 V gate drive to fully enhance the channel and minimize R_DS(on). Using 5 V risks partial turn-on, excessive conduction loss, and thermal runaway. Infineon specifies +18 V turn-on and 0 V turn-off as the recommended bias.

What is the purpose of the separate driver-source pin (Pin 3)?

Pin 3 provides a Kelvin connection to the source of the MOSFET's control loop, decoupling gate drive return from high-current power return (Pin 2). This eliminates voltage drop across source inductance from distorting the effective V_GS, preventing false turn-on during fast dI/dt transitions - critical for stable 100+ kHz operation.

Is the body diode suitable for continuous reverse conduction?

Yes - the integrated SiC body diode is fully rated for hard commutation and reverse conduction, with 13.7 ns forward recovery time and 67 nC recovery charge. It supports regenerative braking in motor drives and freewheeling in totem-pole PFC, unlike silicon MOSFETs where body diode use is discouraged.

Does this part require a negative gate voltage for turn-off?

No. The device is designed for 0 V turn-off with no risk of parasitic turn-on, thanks to its benchmark 4.5 V V_GS(th) and 200 V/ns dv/dt ruggedness. Negative gate voltage is unnecessary and may increase gate oxide stress; Infineon explicitly recommends 0 V turn-off in the datasheet.

IMZA65R033M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 27.9A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 5.7mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1214 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 194W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-8

IMZA65R033M2HXKSA1 FAQ

1.How can I place an order for IMZA65R033M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R033M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R033M2HXKSA1 reliable?

The price and inventory of IMZA65R033M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R033M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R033M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R033M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R033M2HXKSA1?

IMZA65R033M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R033M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R033M2HXKSA1?

For technical support, including IMZA65R033M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R033M2HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R033M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R033M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R033M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R033M2HXKSA1?

All IMZA65R033M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R033M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R033M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R033M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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