Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R048M1HXKSA1

Name: IMZA65R048M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R048M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMZA65R048M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R048M1HXKSA1.pdf

Description:: MOSFET 650V NCH SIC TRENCH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:420

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMZA65R048M1HXKSA1 from Infineon is a 650 V, 48 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with Kelvin source configuration. It delivers low switching losses via dedicated driver source pin, supports 100 A peak drain current, operates up to 175 °C junction temperature, and is qualified per JEDEC for industrial applications - enabling high-efficiency, high-power-density designs in hard-commutated topologies.

For engineers reviewing the IMZA65R048M1HXKSA1 datasheet, IMZA65R048M1HXKSA1 pinout, IMZA65R048M1HXKSA1 application, or IMZA65R048M1HXKSA1 equivalent, key selection criteria include its 48 mΩ R_DS(on) at 18 V_GS, 78 nC Q_oss at 400 V, 33 nC total gate charge, robust 171 mJ single-pulse avalanche energy, and Kelvin-source–enabled reduction of switching losses by up to 4× versus standard TO-247.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: high breakdown voltage (650 V), low temperature coefficient of R_DS(on), and superior thermal conductivity. Its 4-pin PG-TO247-4 layout separates power and driver source paths, eliminating source inductance-induced gate oscillation during fast switching.

The device features a commutation-robust intrinsic body diode with 68 ns forward recovery time and 125 nC Q_fr, enabling reliable operation in continuous hard-switching circuits. Gate threshold voltage is tightly distributed (3.5–5.7 V), and gate oxide reliability is validated to T_j,max = 175 °C under industrial stress conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400 V AC input systems with >2× safety margin against transients.
R_DS(on), typ	48 mΩ at V_GS = 18 V, I_D = 20.1 A, T_j = 25 °C - Defines conduction loss baseline in high-current DC/DC stages.
Q_g	33 nC - Determines gate drive power requirement and influences switching speed control fidelity.
E_oss	11.7 μJ at V_DS = 400 V - Quantifies output capacitance energy loss during turn-on; critical for ZVS design.
I_D, peak	100 A - Supports short-duration overload handling in UPS and solar inverter boost stages.
T_j,max	175 °C - Allows derated operation in sealed enclosures or high-ambient environments without forced cooling.
dv/dt ruggedness	200 V/ns - Ensures immunity to parasitic turn-on in high-di/dt half-bridge configurations.

Pinout & Package

Package: PG-TO247-4 - Thermally optimized 4-pin variant with isolated driver source terminal for gate loop inductance minimization and stable high-speed switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power path; electrically connected to metal tab for direct heatsink mounting and low-inductance thermal path.
Pin 2	Power Source	Carries high-current return path for load; not interchangeable with Pin 3 due to internal routing and inductance profile.
Pin 3	Driver Source	Provides Kelvin connection to gate driver IC ground reference; eliminates source inductance impact on gate voltage waveform.
Pin 4	Gate	Control input for MOSFET channel; requires <25 V absolute max rating and low-impedance gate driver for optimal dV/dt control.

Key Features

Feature	Design Value
Kelvin source configuration	Enables gate drive loop decoupling from power loop, reducing switching loss by up to 4× and suppressing false turn-on during hard commutation.
Commutation-robust body diode	68 ns forward recovery time and 125 nC Q_fr allow reliable zero-voltage switching in totem-pole PFC without external SiC diodes.
JEDEC-qualified industrial reliability	Validated for lifetime operation at T_j ≤ 175 °C and rated for repetitive avalanche energy (0.85 mJ/pulse) in real-world fault conditions.
Low Q_oss / C_oss ratio	78 nC Q_oss at 400 V with 146 pF C_oss,er enables efficient soft-switching across 50–100 kHz range in high-frequency inverters.

Applications

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: Boost stage and H-bridge in string inverters operating at 100 kHz with 1000 V DC bus.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch with Kelvin source for precise gate control under fast dv/dt transitions.

Use Value: Reduces conduction + switching losses by 35% vs. Si IGBTs, enabling >99% peak efficiency and passive cooling in compact outdoor enclosures.

Use Scenario: DC fast charging modules delivering 150–350 kW with liquid-cooled power stacks.

IC Role / Device Role / Timing Role: Primary switching element in interleaved LLC resonant converters requiring 650 V blocking and sub-20 ns switching transitions.

Use Value: Supports 100 A peak current at 175 °C junction temperature, enabling higher power density and reduced thermal derating margins.

Industrial UPS Systems

Energy Storage Converters

Use Scenario: Online double-conversion UPS with bidirectional buck-boost stages handling 480 V AC input and battery backup.

IC Role / Device Role / Timing Role: Bidirectional switch in four-quadrant converter topology with hard commutation capability.

Use Value: 171 mJ single-pulse avalanche energy rating ensures survival during grid fault events without snubber circuits.

Use Scenario: Grid-forming battery energy storage systems (BESS) with 800 V nominal DC link and 10 kHz PWM modulation.

IC Role / Device Role / Timing Role: Main isolation-stage switch in modular multilevel converter (MMC) submodules.

Use Value: Low R_DS(on) temperature coefficient maintains consistent conduction loss across -40 °C to +70 °C ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0045065K	45 mΩ R_DS(on), same 650 V rating, but TO-247-3 package without Kelvin source.	Lacks driver-source separation; requires careful gate loop layout to avoid oscillation above 50 kHz.	Select when cost sensitivity outweighs need for ultra-low-loss switching and board space allows optimized gate routing.
STW65N65FD2	650 V, 65 mΩ, silicon-based superjunction MOSFET; no SiC benefits in thermal or switching performance.	Higher conduction loss at >85 °C; limited to ≤75 kHz operation due to Q_g = 105 nC and slower body diode.	Choose only for legacy redesigns where SiC qualification timelines or gate driver compatibility are constraints.

Compared with C3M0045065K and STW65N65FD2, IMZA65R048M1HXKSA1 uniquely combines Kelvin-source–enabled low-loss switching, industrial-grade avalanche ruggedness, and JEDEC-qualified reliability-making it optimal for new high-efficiency, high-power-density designs where thermal headroom and system-level efficiency are critical.

Availability

IMZA65R048M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IMZA65R048M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ M1 generation - designed specifically for high-efficiency, high-reliability industrial power conversion where thermal robustness, switching speed, and system-level power density are prioritized over lowest-cost silicon alternatives.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The datasheet specifies V_GS operating range as –2 V to +20 V for continuous use, with transient tolerance up to +25 V for ≤1% duty cycle. Exceeding +20 V risks accelerated gate oxide degradation, especially at elevated temperatures. Recommended turn-on voltage is +18 V, and turn-off voltage is 0 V - aligning with standard isolated gate drivers like the 1ED34xx series.

Can the power source (Pin 2) and driver source (Pin 3) be shorted together?

No - the datasheet explicitly warns that exchanging or shorting Pins 2 and 3 may cause malfunction. Pin 2 carries high di/dt return current and contributes to power loop inductance; Pin 3 provides low-noise gate reference. Shorting them reintroduces source inductance into the gate loop, degrading switching performance and risking oscillation or false turn-on during high dv/dt events.

Is this device suitable for unidirectional or bidirectional power flow applications?

Yes - its commutation-robust body diode (68 ns t_fr, 125 nC Q_fr) and 100 A peak reverse drain current rating enable reliable bidirectional operation in totem-pole PFC and battery bi-directional DC/DC converters. The Kelvin source enhances control stability during reverse conduction transitions, unlike standard 3-pin SiC MOSFETs.

How does thermal resistance compare between this part and standard TO-247-3 SiC MOSFETs?

R_th(j–c) is 1.0 °C/W - identical to most industry-standard TO-247 packages - because thermal path flows through the metal tab (Pin 1) regardless of pin count. However, the 4-pin layout improves electrical performance, not thermal resistance; heatsink interface and mounting torque (60 Ncm) remain the dominant thermal variables in system-level thermal design.

IMZA65R048M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 20.1A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1118 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IMZA65R048M1HXKSA1 FAQ

1.How can I place an order for IMZA65R048M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R048M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R048M1HXKSA1 reliable?

The price and inventory of IMZA65R048M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R048M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R048M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R048M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R048M1HXKSA1?

IMZA65R048M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R048M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R048M1HXKSA1?

For technical support, including IMZA65R048M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R048M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R048M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R048M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R048M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R048M1HXKSA1?

All IMZA65R048M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R048M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R048M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R048M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …