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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R050M2HXKSA1

Name: IMZA65R050M2HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R050M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R050M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R050M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMZA65R050M2HXKSA1 from Infineon is a 650 V, 50 mΩ SiC MOSFET in PG-TO247-4 package with 4-pin source-split configuration (Driver Source Pin 3, Power Source Pin 2), designed for high-efficiency hard-switching power converters. It delivers 113 A peak drain current, 4.5 V gate threshold voltage, and ultra-low 6.3 μJ turn-off switching loss at 400 V, enabling compact, high-power-density SMPS and EV charging systems.

For engineers reviewing the IMZA65R050M2HXKSA1 datasheet, IMZA65R050M2HXKSA1 pinout, IMZA65R050M2HXKSA1 application, or IMZA65R050M2HXKSA1 equivalent, key selection criteria include its 4-pin layout for reduced source inductance, robust body diode operation under hard commutation, and compatibility with bipolar gate driving schemes up to ±25 V transient rating.

Technical Context

This CoolSiC™ G2 MOSFET employs Infineon's second-generation silicon carbide trench technology with XT interconnection for optimized thermal resistance (0.98 °C/W j-c). Its 4-pin TO247 package separates driver and power source paths to suppress common-source inductance, directly improving switching speed and EMI performance in high-dV/dt applications.

The device operates with recommended gate voltages of 0 V turn-off and +18 V turn-on, features a benchmark V_GS(th) of 4.5 V (min 3.5 V, max 5.6 V), and sustains 200 V/ns dv/dt without parasitic turn-on-enabling reliable operation in fast-switching topologies like Totem-Pole PFC and three-level inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V bus systems including 400 V DC-link with margin.
R_DS(on)	50 mΩ (typ) at V_GS = 18 V, T_j = 25°C - Enables low conduction loss in high-current motor drives and UPS.
Q_g	22 nC - Low total gate charge reduces driver power requirement and enables faster switching transitions.
E_oss	6.3 μJ @ 400 V - Energy-related output capacitance supports soft-switching behavior and reduces turn-off loss.
I_D,pulse	113 A - Peak pulsed current capability supports short-term overload conditions in solar inverters.
T_j,max	175 °C - Extended junction temperature rating allows higher power density and derating flexibility.
V_GS(th)	4.5 V (typ) - Well-defined threshold minimizes risk of unintended turn-on during noise transients.
R_th(j-c)	0.98 °C/W - Low thermal resistance enables efficient heat transfer to heatsink in high-power modules.

Pinout & Package

Package: PG-TO247-4 - 4-pin variant with isolated driver source (Pin 3) and power source (Pin 2), tab-connected drain (Pin 1), and gate (Pin 4); optimized for low-inductance PCB layouts in high-frequency power stages.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-side current path and thermal interface	Directly connected to heatsink; carries full load current and dissipates >90% of power loss.
Pin 1 (Drain)	Drain connection	Electrically tied to tab; used for PCB routing where tab mounting is not feasible.
Pin 2 (Power Source)	Power return path for main current loop	Connects to low-side switch or DC-link capacitor; carries high di/dt current, must be routed with minimal loop area.
Pin 3 (Driver Source)	Reference node for gate driver circuit	Isolated from power source to eliminate gate loop inductance; critical for stable high-speed switching.
Pin 4 (Gate)	Control input for MOSFET channel	Driven by external gate driver; requires low-impedance path to Pin 3 to minimize ringing and overshoot.

Key Features

Feature	Design Value
4-pin source-split layout	Eliminates common-source inductance in gate loop, enabling clean 200 V/ns dv/dt operation without snubbers.
Robust body diode	Hard-commutation capable with 49 nC forward recovery charge and 11.6 ns recovery time-supports ZVS/ZCS in resonant topologies.
Bipolar gate drive support	Rated for −10 V to +25 V transient gate voltage, allowing active Miller clamping and negative turn-off bias for enhanced noise immunity.
XT interconnection technology	Reduces thermal resistance by ~15% vs. standard wirebonding, improving long-term reliability under power cycling stress.
JEDEC-qualified ruggedness	Validated for repetitive avalanche energy (0.52 mJ/pulse) and single-pulse avalanche (105 mJ), supporting fault-tolerant designs.

Applications

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: Three-phase string inverters operating at 100 kHz switching frequency with 1000 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage and H-bridge inverter stage, handling bidirectional power flow.

Use Value: 50 mΩ R_DS(on) and 6.3 μJ E_oss reduce conduction and switching losses by >18% vs. Si IGBTs, enabling >99% peak efficiency.

Use Scenario: 22 kW on-board charger with dual-phase Totem-Pole PFC and CLLC DC-DC stage.

IC Role / Device Role / Timing Role: Fast-switching PFC switch with zero-voltage switching capability enabled by low C_oss and robust body diode.

Use Value: 4.5 V V_GS(th) and 22 nC Q_g allow direct drive from industry-standard 18 V gate drivers, eliminating level-shifters.

Industrial UPS Systems

High-Density SMPS

Use Scenario: Online double-conversion UPS with 400 V DC bus, delivering 10 kVA output with <1 ms transfer time.

IC Role / Device Role / Timing Role: Output inverter switch operating in 50/60 Hz fundamental plus high-frequency PWM modulation.

Use Value: 175 °C T_j,max and 0.98 °C/W R_th(j-c) enable compact heatsink design while maintaining >10-year MTBF under continuous load.

Use Scenario: 3 kW telecom rectifier with 1 MHz GaN-assisted LLC topology requiring high-voltage primary switches.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in asymmetric half-bridge configuration with synchronous rectification.

Use Value: 200 V/ns dv/dt rating and 4-pin layout suppress EMI generation, reducing filter component count by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	650 V, 65 mΩ, TO247-3L; no driver source pin - higher source inductance limits dv/dt to 150 V/ns.	Lacks 4-pin layout; unsuitable for >150 kHz hard-switching with tight EMI targets.	Select when cost sensitivity outweighs layout complexity and dv/dt requirements.
IXFH50N65X2	650 V, 55 mΩ, TO247-3L; SiC planar structure; higher Q_g (34 nC) and E_oss (11.2 μJ).	Higher switching loss increases thermal load in high-frequency PFC; requires larger gate driver.	Prefer for legacy designs already using planar SiC or where gate driver headroom exceeds 25 V.

Compared with C3M0065065K and IXFH50N65X2, IMZA65R050M2HXKSA1 offers lower R_DS(on), lower E_oss, and superior dv/dt immunity due to its 4-pin source-split architecture-making it optimal for next-gen high-frequency, high-density power conversion where layout-induced oscillation must be minimized.

Availability

IMZA65R050M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZA65R050M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial automation systems.

FAQ

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum transient gate-source voltage is +25 V and −10 V for pulses ≤500 ns. For continuous operation, Infineon specifies +18 V turn-on and 0 V turn-off as the recommended range. Exceeding +20 V risks accelerated gate oxide degradation, while driving below +15 V may compromise R_DS(on) and increase conduction loss.

Can the Power Source (Pin 2) and Driver Source (Pin 3) be shorted together?

No-Infineon explicitly warns that exchanging or shorting Pin 2 (Power Source) and Pin 3 (Driver Source) may cause malfunction. The pins serve distinct current paths: Pin 2 carries high di/dt power return current, while Pin 3 provides low-noise reference for gate control. Shorting them reintroduces source inductance into the gate loop, degrading switching performance and increasing risk of oscillation.

How does the internal body diode compare to discrete SiC Schottky diodes in reverse recovery?

This MOSFET's integrated body diode exhibits 11.6 ns forward recovery time and 49 nC recovery charge at 1000 A/μs di/dt-performance competitive with discrete 650 V SiC Schottkys. Unlike silicon diodes, it shows no tail current, enabling true zero-current switching in resonant converters without additional snubbing.

Is this device qualified for automotive applications per AEC-Q101?

No-IMZA65R050M2HXKSA1 is qualified per JEDEC standards (JESD47, JESD22) for industrial and commercial use only. It is not AEC-Q101 certified. For automotive-grade equivalents, Infineon offers the IMW65R048M2H (AEC-Q101 qualified, same 650 V/48 mΩ spec) in PG-TO247-4 package with identical pinout and thermal performance.

IMZA65R050M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 46mOhm @ 18.2A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 3.7mA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 153W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-8

IMZA65R050M2HXKSA1 FAQ

1.How can I place an order for IMZA65R050M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R050M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R050M2HXKSA1 reliable?

The price and inventory of IMZA65R050M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R050M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R050M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R050M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R050M2HXKSA1?

IMZA65R050M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R050M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R050M2HXKSA1?

For technical support, including IMZA65R050M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R050M2HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R050M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R050M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R050M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R050M2HXKSA1?

All IMZA65R050M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R050M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R050M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R050M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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