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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R057M1HXKSA1

Name: IMZA65R057M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R057M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R057M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R057M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET, PG-TO247

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Product details

Overview

IMZA65R057M1HXKSA1 from Infineon is a 650 V, 57 mΩ (typ) silicon carbide MOSFET in PG-TO247-4 package with Kelvin source configuration. It delivers 85 A peak drain current, 9.8 μJ E_oss at 400 V, and operates up to T_j,max = 175 °C. Designed for hard-switched topologies requiring high efficiency and ruggedness, it enables compact, high-power-density SMPS and solar inverters.

For engineers reviewing the IMZA65R057M1HXKSA1 datasheet, IMZA65R057M1HXKSA1 pinout, IMZA65R057M1HXKSA1 application, or IMZA65R057M1HXKSA1 equivalent, key selection criteria include R_DS(on),typ = 57 mΩ, Q_G = 28 nC, Kelvin-source–enabled low switching loss, body diode Q_rr = 113 nC, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: low conduction loss, high thermal conductivity, and intrinsic avalanche robustness. Its 4-pin TO247 package separates driver and power source terminals to minimize gate loop inductance and suppress voltage overshoot during fast switching.

The device features a commutation-robust internal body diode (t_fr = 28 ns, Q_frm = 113 nC), 200 V/ns dv/dt immunity, and gate oxide rated for 18 V continuous operation. It supports standard gate drivers without requiring negative turn-off bias, while Kelvin source reduces effective R_DS(on) dependency on temperature and pulse current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for 400 V DC bus systems with margin for transients.
R_DS(on),typ	57 mΩ at V_GS = 18 V, I_D = 16.7 A, T_j = 25 °C - Enables low conduction loss in high-current PFC and inverter legs.
Q_G	28 nC - Low total gate charge reduces drive power and allows use of cost-effective 1–2 W gate drivers.
E_oss	9.8 μJ at V_DS = 400 V - Low output energy minimizes turn-off loss and improves ZVS capability in resonant converters.
T_j,max	175 °C - Enables high-temperature operation in sealed enclosures or high-ambient environments without derating.
I_D,peak	85 A - Supports short-duration overload conditions in UPS and EV charging surge events.
R_th(j-c)	1.13 °C/W - Efficient heat transfer to heatsink enables compact thermal design with <100 W dissipation per device.

Pinout & Package

Package: PG-TO247-4 (Kelvin source configuration). Tab is Drain (D); Pin 1 = Drain, Pin 2 = Power Source (S_P), Pin 3 = Driver Source (S_D), Pin 4 = Gate (G).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Main high-side current path; electrically connected to metal tab for low-inductance thermal and power connection.
Pin 2	Power Source (S_P)	Carries high-current return path; must not be interchanged with Pin 3 to avoid gate control instability.
Pin 3	Driver Source (S_D)	Provides Kelvin reference for gate drive loop; eliminates source inductance impact on switching speed and stability.
Pin 4	Gate (G)	Control terminal; driven relative to S_D; requires ≤20 V operating range per datasheet Table 4.

Key Features

Feature	Design Value
Kelvin source configuration	Separates power and driver source paths to reduce gate loop inductance by >70%, enabling stable 100+ kHz hard switching.
Commutation-robust body diode	t_fr = 28 ns, Q_frm = 113 nC - Minimizes reverse recovery loss and voltage spikes in bridge-leg hard-commutation.
JEDEC-qualified industrial reliability	Qualified per JESD47 and JEP180 for ≥15-year lifetime in 175 °C junction operation - validated for solar inverter field deployments.
Low E_oss and C_oss	E_oss = 9.8 μJ @ 400 V, C_oss(er) = 122 pF - Reduces turn-off loss by ~35% vs. comparable Si MOSFETs in LLC resonant designs.
High dv/dt immunity	200 V/ns - Ensures noise-immune operation in high-di/dt motor drives and fast-switching DC/DC converters.

Applications

Solar PV Inverters

Industrial SMPS

Use Scenario: Three-phase string inverters with 1000 V DC input and 50–100 kW output using NPC or T-type topologies.

IC Role / Device Role / Timing Role: High-side and low-side switching element in bidirectional DC/AC conversion stage.

Use Value: 57 mΩ R_DS(on) and 9.8 μJ E_oss enable >99% peak efficiency at 50 kHz switching, reducing heatsink mass by 40%.

Use Scenario: High-efficiency 3 kW telecom rectifier with active clamp forward or phase-shifted full-bridge architecture.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier and main switch in high-frequency isolated DC/DC stage.

Use Value: Kelvin source eliminates gate oscillation at 200 kHz, allowing 30% higher power density than Si-based solutions.

EV Charging Infrastructure

Energy Storage Systems

Use Scenario: 22 kW AC/DC OBC (on-board charger) and 150 kW DC fast-charging modules with dual active bridge topology.

IC Role / Device Role / Timing Role: Isolation-stage switch handling bidirectional 800 V DC bus with 100 A peak current.

Use Value: 85 A peak rating and 142 mJ single-pulse avalanche energy ensure robustness against grid surges and battery fault currents.

Use Scenario: Bidirectional DC/DC converter in 48–800 V battery formation and grid-tied storage systems.

IC Role / Device Role / Timing Role: High-efficiency buck-boost switch managing charge/discharge cycles at 10–50 kHz.

Use Value: 175 °C T_j,max and 1.13 °C/W R_th(j-c) allow operation in unventilated cabinets with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	R_DS(on),typ = 65 mΩ, Q_G = 32 nC, TO247-4L package, no Kelvin source	Lacks dedicated driver source pin - requires external source inductance compensation for >100 kHz operation	Prefer when cost sensitivity outweighs switching loss optimization and layout complexity is constrained.
ROHM SCT3060AL	R_DS(on),typ = 60 mΩ, Q_G = 25 nC, TO247N-4L, integrated gate resistor	Lower Q_G but higher R_DS(on); gate resistor limits peak dV/dt and slows switching	Choose for simplified gate drive design where moderate efficiency gain suffices and EMI filtering is prioritized.

Compared with C3M0065065K and SCT3060AL, IMZA65R057M1HXKSA1 offers the lowest R_DS(on) and highest peak current (85 A), making it optimal for high-power, high-frequency applications where thermal headroom and switching loss dominate system size and efficiency targets.

Availability

IMZA65R057M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, industrial SMPS, and EV charging infrastructure requiring stable component supply across multi-year production cycles.

Supply support for IMZA65R057M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ M1 generation of trench-based SiC MOSFETs, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial automation systems.

FAQ

What is the maximum recommended gate drive voltage for IMZA65R057M1HXKSA1?

The datasheet specifies a recommended turn-on voltage of 18 V and a maximum static gate-source voltage of 23 V. Operating above 18 V does not significantly reduce R_DS(on), but exceeding 23 V risks permanent gate oxide damage. Transient excursions up to 25 V are allowed only for ≤1% duty cycle.

Can the power source (Pin 2) and driver source (Pin 3) be swapped in layout?

No - swapping Pin 2 (S_P) and Pin 3 (S_D) violates the Kelvin source architecture and causes gate control instability. The driver source must connect exclusively to the gate driver IC's return path; the power source connects to the main current return node. Interchange leads to unpredictable switching behavior and potential device failure.

Is IMZA65R057M1HXKSA1 qualified for automotive applications?

No - this part is fully qualified per JEDEC standards for industrial applications only (T_j = −55 °C to 175 °C, lifetime validation per JEP180). It lacks AEC-Q101 qualification, automotive-grade traceability, and extended temperature screening required for under-hood or traction inverter use.

How does the body diode performance compare to silicon alternatives?

The internal body diode has t_fr = 28 ns and Q_frm = 113 nC at 16.7 A, offering faster recovery and lower stored charge than typical 650 V Si superjunction diodes (t_fr > 100 ns, Q_rr > 300 nC). This reduces reverse recovery loss and EMI in bridge configurations without requiring external SiC Schottky anti-parallel diodes.

IMZA65R057M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 74mOhm @ 16.7A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 133W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IMZA65R057M1HXKSA1 FAQ

1.How can I place an order for IMZA65R057M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R057M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R057M1HXKSA1 reliable?

The price and inventory of IMZA65R057M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R057M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R057M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R057M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R057M1HXKSA1?

IMZA65R057M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R057M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R057M1HXKSA1?

For technical support, including IMZA65R057M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R057M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R057M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R057M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R057M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R057M1HXKSA1?

All IMZA65R057M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R057M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R057M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R057M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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