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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R060M2HXKSA1

Name: IMZA65R060M2HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R060M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R060M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R060M2HXKSA1.pdf

Description:: IMZA65R060M2HXKSA1

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Product details

Overview

IMZA65R060M2HXKSA1 from Infineon is a 650 V, 60 mΩ SiC MOSFET in PG-TO247-4 package, designed as a high-efficiency power switch for hard-switched and resonant topologies. It features 4.5 V gate threshold voltage, 19 nC total gate charge, and ultra-low 4.8 μJ output switching energy at 400 V - enabling high-frequency operation in solar inverters, EV chargers, and UPS systems.

For engineers reviewing the IMZA65R060M2HXKSA1 datasheet, IMZA65R060M2HXKSA1 pinout, IMZA65R060M2HXKSA1 application, or IMZA65R060M2HXKSA1 equivalent, key selection criteria include its 175 °C max junction temperature, driver-source separation for noise immunity, robust body diode with 11.1 ns forward recovery time, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ Gen 2 device uses trench-based silicon carbide technology to deliver low R_DS(on) (60 mΩ typ), low Q_g (19 nC), and low C_oss (65 pF), enabling high-speed switching with minimal losses. Its 4-pin configuration isolates driver source from power source to suppress common-source inductance effects.

The MOSFET supports bipolar gate driving (0 V turn-off, +18 V turn-on) and exhibits benchmark dv/dt ruggedness up to 200 V/ns. Its body diode withstands hard commutation with 13.5 A peak reverse recovery current and 75 nC reverse recovery charge under 4000 A/μs di/dt stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports DC-link voltages up to 400 V in 3-phase inverters with margin
R_DS(on)	60 mΩ @ V_GS = 18 V, T_j = 25°C - enables high-current conduction with <1.2 W conduction loss at 15.4 A
Q_g	19 nC - reduces gate drive power and allows use of compact, cost-effective drivers
E_oss	4.8 μJ @ 400 V - minimizes turn-off energy and improves efficiency in high-frequency ZVS/ZCS designs
T_j,max	175 °C - permits operation in thermally constrained environments without derating
I_D,pulse	96 A - supports short-term overload conditions in motor drives and UPS peak loads
dv/dt rating	200 V/ns - ensures stable operation under fast transient voltage edges in high-power converters

Pinout & Package

Package: PG-TO247-4 - thermally enhanced 4-pin through-hole package with isolated driver source terminal and tab-connected drain for low-inductance mounting.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Electrically connected to internal die drain; mounted to heatsink for thermal path and low-inductance return
Pin 1 (Drain)	Drain signal sense	Provides Kelvin connection for accurate voltage sensing; not for current conduction
Pin 2 (Power Source)	Power return path	Carries high-current source return; connects to main PCB ground plane or busbar
Pin 3 (Driver Source)	Gate driver reference	Isolated low-noise reference for gate driver IC; prevents gate oscillation during fast switching
Pin 4 (Gate)	Control input	Receives gate drive signal; requires low-inductance layout to minimize ringing and overshoot

Key Features

Feature	Design Value
Separate driver and power source pins	Eliminates common-source inductance impact on gate control, enabling clean 18 V turn-on without parasitic turn-on risk
Robust body diode with hard commutation capability	Withstands 13.5 A peak reverse recovery current and 75 nC Q_rr, supporting unidirectional and bidirectional topologies without external anti-parallel diodes
JEDEC-qualified for industrial applications	Fully validated per JESD47 and JESD22-A108, ensuring >10-year field reliability in 24/7 operation at 175 °C junction
XT interconnection technology	Reduces thermal resistance R_th(j-c) to 1.15 °C/W, improving power density by 22% vs. standard TO247 SiC alternatives

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-level NPC or T-type inverter stage converting 800–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 50–100 kHz hard-switched or hybrid-resonant stages.

Use Value: 60 mΩ R_DS(on) and 4.8 μJ E_oss reduce conduction and switching losses, enabling >99% peak efficiency at 11 kW per module.

Use Scenario: Secondary-side LLC resonant converter in 150–350 kW charging stations with wide input voltage range.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch operating at 200–500 kHz.

Use Value: Low Q_g (19 nC) and fast turn-off (4.8 ns fall time) allow precise dead-time control and zero-voltage switching across full load range.

Industrial UPS Systems

High-Power Motor Drives

Use Scenario: Double-conversion online UPS with IGBT/SiC hybrid inverter delivering clean 400 V AC output under grid failure.

IC Role / Device Role / Timing Role: Output stage switch handling 30–60 kVA loads with 10 ms transfer time requirement.

Use Value: 175 °C T_j,max and 96 A pulse rating support continuous overload operation and thermal headroom during brownouts.

Use Scenario: 75–200 kW servo or traction inverter for factory automation and electric transport.

IC Role / Device Role / Timing Role: Phase-leg switch in 2-level or 3-level topology with active gate control for torque ripple suppression.

Use Value: 200 V/ns dv/dt rating and 11.1 ns body diode recovery ensure stable commutation during regenerative braking and field-weakening operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	650 V, 65 mΩ, TO247-3L; no driver-source isolation; higher R_DS(on) and Q_g (22 nC)	Lacks Kelvin source; requires careful gate loop layout to avoid oscillation in high-dI/dt apps	Lower cost but demands more layout effort and gate driver optimization
ROHM SCT3060AL	650 V, 60 mΩ, TO247-4L; different gate threshold (5.5 V typ); higher C_iss (850 pF)	Higher V_GS(th) increases gate drive voltage margin but reduces noise immunity at low V_GS	Better EMI behavior in noisy environments but slightly higher switching loss at 400 V

Compared with C3M0065065K and SCT3060AL, IMZA65R060M2HXKSA1 delivers superior gate control fidelity via dedicated driver source, lower E_oss, and JEDEC industrial qualification - making it optimal for mission-critical, high-reliability power conversion where layout simplicity and long-term stability are prioritized.

Availability

IMZA65R060M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IMZA65R060M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of high-reliability component development and manufacturing expertise.

This part belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems demanding robustness, ease of use, and system-level cost reduction.

FAQ

What is the maximum recommended gate drive voltage for IMZA65R060M2HXKSA1?

The absolute maximum gate-source voltage is 25 V for transient conditions (≤500 ns, ≤1% duty cycle), but Infineon specifies +18 V as the recommended turn-on voltage and 0 V as the recommended turn-off voltage. Operating within this range ensures optimal R_DS(on), switching speed, and long-term gate oxide reliability without exceeding safe field limits.

Can the driver source (Pin 3) and power source (Pin 2) be shorted together?

No - Infineon explicitly warns that exchanging or shorting Pin 2 (Power Source) and Pin 3 (Driver Source) may cause malfunction due to gate loop instability and parasitic turn-on. The 4-pin architecture relies on physical separation to isolate high-di/dt source return paths from sensitive gate reference, and merging them negates the design benefit and risks shoot-through.

How does the body diode performance compare to silicon alternatives in hard commutation?

This CoolSiC™ MOSFET's body diode achieves 11.1 ns forward recovery time and 13.5 A peak reverse recovery current under 4000 A/μs di/dt - outperforming typical 650 V Si IGBTs (≥50 ns t_fr) and enabling reliable bidirectional switching in totem-pole PFC and matrix converters without external diodes or snubbers.

Is IMZA65R060M2HXKSA1 qualified for automotive applications?

No - it is fully qualified per JEDEC standards for industrial applications only (AEC-Q101 not claimed). While its 175 °C T_j,max and robust construction suit harsh environments, Infineon does not certify this variant for automotive use; designers requiring AEC-Q101 compliance should select the IMZA65R060M2HXA1 (automotive-grade version) instead.

IMZA65R060M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 15.4A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 669 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-8

IMZA65R060M2HXKSA1 FAQ

1.How can I place an order for IMZA65R060M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R060M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R060M2HXKSA1 reliable?

The price and inventory of IMZA65R060M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R060M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R060M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R060M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R060M2HXKSA1?

IMZA65R060M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R060M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R060M2HXKSA1?

For technical support, including IMZA65R060M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R060M2HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R060M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R060M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R060M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R060M2HXKSA1?

All IMZA65R060M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R060M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R060M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R060M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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