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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R107M1HXKSA1

Name: IMZA65R107M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R107M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R107M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMZA65R107M1HXKSA1.pdf

Description:: MOSFET 650V NCH SIC TRENCH

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Product details

Overview

IMZA65R107M1HXKSA1 from Infineon is a 650 V, 107 mΩ CoolSiC™ MOSFET in PG-TO247-4 package with Kelvin source configuration, designed for high-efficiency hard-switching topologies including solar inverters and EV charging infrastructure. It delivers 48 A peak drain current, 35 nC output charge at 400 V, and operates up to 175 °C junction temperature.

For engineers reviewing the IMZA65R107M1HXKSA1 datasheet, IMZA65R107M1HXKSA1 pinout, IMZA65R107M1HXKSA1 application, or IMZA65R107M1HXKSA1 equivalent, key selection criteria include its 4× lower switching losses enabled by Kelvin source, robust 76 mJ single-pulse avalanche energy, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: low R_DS(on) temperature coefficient, fast commutation with low Q_rr, and intrinsic body diode with 55 ns forward recovery time. Its gate threshold voltage (4.5 V typ) and 18 V recommended turn-on voltage support standard gate drivers.

The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to eliminate source inductance impact on switching waveforms. This architecture enables stable operation under high dv/dt (200 V/ns) and continuous hard commutation without oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V DC-link applications like PV string inverters
R_DS(on), typ	107 mΩ at V_GS = 18 V, T_j = 25 °C - Enables low conduction loss in 10–20 kW power stages
Q_oss	35 nC at V_DS = 400 V - Determines turn-off energy loss and snubber design requirements
I_D, peak	48 A - Supports short-circuit withstand capability in UPS and motor drive protection schemes
E_AS	76 mJ - Specifies single-pulse avalanche ruggedness for overvoltage transients in unclamped inductive switching
T_j,max	175 °C - Allows operation in high-temperature environments such as onboard chargers with limited heatsinking
R_th(j-c)	1.6 °C/W - Defines thermal path efficiency from die to case, critical for thermal derating calculations

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated tab (Drain), Gate (Pin 4), Power Source (Pin 2), and Kelvin Driver Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 1	Drain (high-current)	Primary high-side switching node; electrically connected to heatsink; requires isolation if heatsink is grounded
Pin 2	Power Source	Carries main source current to external circuit; used for power return path and current sensing
Pin 3	Driver Source (Kelvin)	Provides dedicated low-inductance gate loop return; must connect directly to gate driver ground to minimize switching overshoot
Pin 4	Gate	Controls channel conduction; driven referenced to Pin 3, not Pin 2 - interchange of Pins 2 and 3 causes malfunction

Key Features

Feature	Design Value
Kelvin source configuration	Reduces gate loop inductance by >75%, enabling clean 200 V/ns switching without external gate resistors
Commutation-robust body diode	55 ns forward recovery time and 76 nC Q_fr allow reliable zero-voltage switching in LLC and phase-shifted full-bridge converters
JEDEC-qualified industrial reliability	Validated per JESD47 and JEP180 for 15+ year lifetime in 85/85 environmental stress conditions
Low R_DS(on) temperature coefficient	142 mΩ max at T_j = 175 °C - ensures stable conduction loss across operating range without thermal runaway
Standard gate drive compatibility	18 V recommended V_GS(on) and −2 to +20 V operating range enable use with common 15 V gate drivers without level-shifting

Applications

Solar PV String Inverters

EV Onboard Chargers (OBC)

Use Scenario: High-frequency DC–AC conversion in 10–25 kW string inverters with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Primary high-side switching device in three-level NPC or T-type inverter legs operating at 30–100 kHz.

Use Value: 107 mΩ R_DS(on) and 35 nC Q_oss reduce total losses by 18% vs. comparable Si MOSFETs, enabling >99% peak efficiency.

Use Scenario: AC–DC PFC and DC–DC isolation stages in bidirectional OBCs supporting 11–22 kW charging.

IC Role / Device Role / Timing Role: Active switch in totem-pole PFC and dual-active-bridge DC–DC converters with soft-switching control.

Use Value: Kelvin source eliminates gate ringing during 100+ kHz transitions, reducing EMI filter size by 30% and simplifying layout.

Uninterruptible Power Supplies (UPS)

Energy Storage System (ESS) Bi-directional Converters

Use Scenario: Double-conversion online UPS delivering clean 50/60 Hz sine wave output with <1 ms transfer time.

IC Role / Device Role / Timing Role: Output inverter switch handling 400 V DC bus and 230 V AC line-synchronized modulation.

Use Value: 76 mJ E_AS withstands load dump transients during bypass-to-inverter switchover without clamping circuits.

Use Scenario: Bi-directional DC–DC stage interfacing 400–800 V battery packs with 48 V or 300–400 V auxiliary systems.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck-boost or CLLC resonant converter topologies.

Use Value: 175 °C T_j,max and 1.6 °C/W R_th(j-c) support compact heatsink designs in space-constrained rack-mounted ESS units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0120100K	1000 V rating, 120 mΩ R_DS(on), TO247-4L package, no Kelvin source	Higher voltage margin but higher conduction loss; lacks Kelvin source for optimized switching	Select when 1000 V blocking is required and gate drive layout allows higher inductance
STW65N65DM6AG	650 V Si IGBT, 1.6 V V_CE(sat), TO247 package, no body diode optimization	Lower cost but slower switching; unsuitable for >30 kHz topologies due to tail current	Select only for cost-sensitive 16–20 kHz applications where efficiency >97% is acceptable

Compared with C3M0120100K and STW65N65DM6AG, IMZA65R107M1HXKSA1 provides superior switching efficiency in 30–100 kHz hard-switched converters due to its Kelvin source, lower Q_oss, and optimized body diode-making it optimal for high-power-density solar, EV, and ESS systems.

Availability

IMZA65R107M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV onboard chargers, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IMZA65R107M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in demanding applications such as solar generation, EV infrastructure, and industrial UPS-leveraging Infineon's 20+ years of SiC material expertise.

FAQ

What is the purpose of the Kelvin source (Pin 3) in IMZA65R107M1HXKSA1?

The Kelvin source (Pin 3) provides a dedicated low-inductance return path for the gate driver loop, decoupling gate control from high-current source paths. This prevents voltage spikes and ringing during fast switching, enabling stable 200 V/ns operation. Pins 2 and 3 must never be interchanged, as doing so disrupts gate control and risks device failure.

Can IMZA65R107M1HXKSA1 replace silicon MOSFETs in existing 650 V designs without layout changes?

No-direct replacement requires PCB redesign to isolate the Kelvin source (Pin 3) from the power source (Pin 2) net. The gate driver ground must connect exclusively to Pin 3, while Pin 2 carries main current. Layout changes are mandatory to realize the 4× lower switching loss benefit and avoid instability.

What is the maximum recommended gate drive voltage for reliable long-term operation?

Infineon specifies 18 V as the recommended turn-on voltage and limits transient gate-source voltage to 25 V (≤1% duty cycle). Operating above 20 V continuously accelerates gate oxide degradation. For lifetime assurance, gate drive should be tightly regulated between 0 V (off) and 18 V (on) with ≤±0.5 V ripple.

How does the body diode performance compare to silicon alternatives in hard-commutation scenarios?

This device features a commutation-robust intrinsic body diode with 55 ns forward recovery time and 76 nC Q_fr, significantly outperforming silicon MOSFETs (typically >200 ns, >300 nC). It supports zero-voltage switching in LLC and phase-shifted topologies without external SiC Schottky antiparallel diodes, reducing component count and conduction loss.

IMZA65R107M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSIC™ M1

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 142mOhm @ 8.9A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 3mA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 496 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IMZA65R107M1HXKSA1 FAQ

1.How can I place an order for IMZA65R107M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R107M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R107M1HXKSA1 reliable?

The price and inventory of IMZA65R107M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R107M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R107M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R107M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R107M1HXKSA1?

IMZA65R107M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R107M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R107M1HXKSA1?

For technical support, including IMZA65R107M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R107M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R107M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R107M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R107M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R107M1HXKSA1?

All IMZA65R107M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R107M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R107M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R107M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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