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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA75R008M1HXKSA1

Name: IMZA75R008M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA75R008M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA75R008M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA75R008M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

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Product details

Overview

IMZA75R008M1HXKSA1 from Infineon is a 750 V, 7.8 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency hard-switching power stages in industrial and renewable energy systems. It delivers 163 A continuous drain current at 25 °C, 926 mJ single-pulse avalanche energy, and 178 nC total gate charge, enabling operation in solar PV inverters and EV charging infrastructure up to 175 °C junction temperature.

For engineers reviewing the IMZA75R008M1HXKSA1 datasheet, IMZA75R008M1HXKSA1 pinout, IMZA75R008M1HXKSA1 application, or IMZA75R008M1HXKSA1 equivalent, key selection criteria include its 750 V blocking voltage, low R_DS(on) × Q_G figure of merit, robust dv/dt immunity (200 V/ns), and dedicated driver source terminal for reduced gate loop inductance.

Technical Context

This CoolSiC™ M1-generation device uses Infineon's proprietary die attach and trench-gate SiC technology to achieve best-in-class R_DS(on) × Q_oss and R_DS(on) × Q_g trade-offs. Its internal body diode supports bidirectional conduction in bridge topologies, while the separate driver source pin decouples gate drive return from power source, minimizing common-source inductance effects during fast switching.

The MOSFET operates across –55 °C to +175 °C junction range with 0.29 °C/W thermal resistance (j–c), validated per JEDEC for industrial applications. Gate threshold voltage is tightly distributed (3.5–5.6 V), and it sustains 708 A peak drain current with 100% avalanche testing-critical for overvoltage transients in ungrounded DC bus systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	750 V - Enables direct use in 600–700 V DC bus systems (e.g., 800 V EV chargers, 1000 V solar strings) without series stacking.
R_DS(on), typ	7.8 mΩ at V_GS = 15 V, T_j = 25 °C - Delivers <1.2 W conduction loss at 40 A, supporting high-power density designs.
Q_g, typ	178 nC at V_DD = 500 V - Low gate charge enables efficient 100+ kHz switching with standard gate drivers (e.g., 1ED34xx).
E_oss, typ	63.1 μJ at V_DD = 500 V - Reduced output capacitance energy lowers turn-off losses in hard-switched PFC and inverter legs.
dv/dt rating	200 V/ns - Immune to parasitic turn-on under fast-rising bus transients, eliminating need for negative gate bias in many topologies.
T_j,max	175 °C - Allows derated operation in compact heatsinks or high-ambient environments (e.g., outdoor UPS enclosures).
Package	PG-TO247-4 - Four-terminal layout separates driver source (Pin 3) from power source (Pin 2), enabling Kelvin-source gate control.

Pinout & Package

PG-TO247-4 package with isolated tab (drain), four leads: Pin 1 = Drain, Pin 2 = Power Source, Pin 3 = Driver Source, Pin 4 = Gate. Tab is electrically connected to drain; mounting screw must be insulated from heatsink unless drain-referenced.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; thermally coupled to heatsink via isolated mounting; carries full load current and switching voltage stress.
Pin 2	Power Source	Source connection for main power path; used for current sensing and low-side return in half-bridge configurations.
Pin 3	Driver Source	Dedicated Kelvin source for gate driver return-eliminates source inductance impact on gate waveform fidelity and switching speed.
Pin 4	Gate	Control input for MOSFET channel; requires 18 V turn-on and 0 V turn-off per recommended operating range; internal R_G,int = 3.0 Ω.

Key Features

Feature	Design Value
750 V SiC MOSFET with M1 process	Enables >99% efficiency in 10–30 kW solar inverters by reducing conduction and switching losses vs. Si IGBTs.
Driver source pin (Kelvin source)	Reduces effective gate loop inductance by >70%, suppressing oscillation and enabling clean 50+ ns rise/fall times at 90 A.
100% avalanche tested	Guarantees single-pulse ruggedness up to 926 mJ-critical for fault handling in grid-tied systems without crowbar protection.
JEDEC-qualified for industrial use	Validated for 15+ year lifetime at 175 °C junction, supporting long-lifecycle deployments in telecom SMPS and energy storage.
Low C_iss/C_oss ratio	6137 pF / 392 pF = 15.6 - Improves Miller immunity and enables stable operation with unipolar gate driving (0/18 V).

Applications

EV Charging Infrastructure

Solar PV Inverters

Use Scenario: 22 kW AC–DC OBC and 150+ kW DC fast-charging modules operating at 800 V nominal DC bus.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC and dual-active-bridge isolation stages; switches at 100–200 kHz with zero-voltage transition assist.

Use Value: 7.8 mΩ R_DS(on) and 178 nC Q_g reduce system losses by 1.8 W per device vs. previous-gen SiC, enabling passive cooling in compact enclosures.

Use Scenario: Three-phase string inverters converting 1000 V DC input to 400 V AC grid, deployed in commercial rooftop and utility-scale farms.

IC Role / Device Role / Timing Role: Upper-leg switch in NPC-T-type three-level topology; handles 90 A RMS phase current with 500 V blocking duty.

Use Value: 200 V/ns dv/dt rating prevents false turn-on during commutation, eliminating need for active Miller clamp circuits and reducing BOM count.

UPS (Uninterruptible Power Supplies)

Energy Storage Systems

Use Scenario: Online double-conversion UPS units delivering 10–40 kVA with <10 ms switchover and >96% efficiency at full load.

IC Role / Device Role / Timing Role: Inverter leg switch in high-frequency PWM stage; operates continuously at 150 °C ambient with forced air cooling.

Use Value: 175 °C T_j,max and 0.29 °C/W R_th(j–c) allow 25% higher power density than 150 °C-rated competitors, reducing heatsink volume by 35%.

Use Scenario: Bidirectional DC–DC converters in battery energy storage systems (BESS), managing 48–800 V battery stacks with regenerative braking recovery.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in isolated CLLC resonant converter; conducts reverse current during regeneration.

Use Value: Integrated body diode with 3.9–5.3 V forward voltage enables efficient freewheeling without external Si diodes, cutting conduction loss by 0.8 W at 60 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065070D	700 V rating, 6.5 mΩ R_DS(on), TO247-3L package (no driver source pin), higher Q_g (210 nC)	Limited to ≤700 V DC buses; lacks Kelvin source, requiring careful layout to suppress ringing in >100 kHz designs	Select when cost sensitivity outweighs layout complexity and 750 V margin is unnecessary.
ROHM SCT3080AL	650 V rating, 80 mΩ R_DS(on), TO247-4L package, lower V_GS(th) (2.7–4.0 V), higher C_oss (550 pF)	Not suitable for 750 V systems; higher conduction loss limits use to ≤5 kW applications	Prefer for lower-power, cost-driven industrial SMPS where 650 V rating suffices and tighter V_GS(th) simplifies gate drive.

Compared with C3M0065070D and SCT3080AL, IMZA75R008M1HXKSA1 uniquely combines 750 V rating, driver-source pin, and sub-8 mΩ R_DS(on)-making it the only option qualified for 10–30 kW industrial inverters demanding both voltage margin and layout robustness.

Availability

IMZA75R008M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IMZA75R008M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to the CoolSiC™ M1 family-designed specifically for high-efficiency, high-reliability industrial power conversion where 750 V blocking, low-loss switching, and rugged operation above 150 °C are mandatory.

FAQ

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate–source voltage is 25 V transient (≤500 ns), but Infineon specifies 18 V as the recommended turn-on voltage and 0 V as turn-off voltage. Operating above 20 V accelerates gate oxide degradation, while below 15 V increases R_DS(on) and conduction loss. The device's 3.5–5.6 V threshold ensures noise immunity in noisy industrial environments.

Can the driver source (Pin 3) and power source (Pin 2) be shorted together?

No-Infineon explicitly warns that exchanging or shorting these pins may cause malfunction. Pin 3 provides a low-inductance Kelvin return for the gate driver, while Pin 2 carries high-current source return. Shorting them reintroduces source inductance into the gate loop, degrading switching performance and risking oscillation or shoot-through in bridge configurations.

Is this device suitable for linear (ohmic) mode operation?

No-linear mode operation is not recommended per the datasheet. The device is characterized and qualified for switching applications only. At V_DS < 100 V and high current, localized heating can exceed safe limits due to non-uniform current distribution across the SiC die. For analog regulation, discrete Si MOSFETs or dedicated linear regulators should be used instead.

How does the 100% avalanche testing impact system-level reliability?

Each unit undergoes single-pulse avalanche stress at 926 mJ (I_AS = 34.7 A, V_DS = 50 V), verifying robustness against real-world overvoltage events like lightning surges or inductive kickback. This eliminates field failures from unclamped inductive switching and reduces need for external snubbers-directly improving MTBF in solar and UPS applications with long service life requirements.

IMZA75R008M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 163A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 90.3A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 32.4mA

Gate Charge (Qg) (Max) @ Vgs:: 178 nC @ 500 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 6137 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 517W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-U02

IMZA75R008M1HXKSA1 FAQ

1.How can I place an order for IMZA75R008M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA75R008M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA75R008M1HXKSA1 reliable?

The price and inventory of IMZA75R008M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R008M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA75R008M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R008M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA75R008M1HXKSA1?

IMZA75R008M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA75R008M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA75R008M1HXKSA1?

For technical support, including IMZA75R008M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R008M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA75R008M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA75R008M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R008M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA75R008M1HXKSA1?

All IMZA75R008M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R008M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA75R008M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA75R008M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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