Infineon Technologies IMZA75R016M1HXKSA1

Overview

IMZA75R016M1HXKSA1 from Infineon is a 750 V, 16 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency hard- and soft-switching power stages in EV charging, solar inverters, and UPS systems. It features 100% avalanche-tested ruggedness, typ. QG of 81 nC, RDS(on) × Qfr optimization, and integrated body diode with 3.9 V forward voltage at 41.5 A.

For engineers reviewing the IMZA75R016M1HXKSA1 datasheet, IMZA75R016M1HXKSA1 pinout, IMZA75R016M1HXKSA1 application, or IMZA75R016M1HXKSA1 equivalent, key selection criteria include its 750 V blocking capability, low 16 mΩ RDS(on) at 18 V gate drive, driver-source pin architecture for reduced common-source inductance, and JEDEC-qualified industrial reliability up to 175 °C junction temperature.

Technical Context

This CoolSiC™ Gen1 device uses silicon carbide substrate with proprietary die attach technology and internal body diode. Its gate threshold voltage (VGS(th)) is tightly distributed (3.5–5.6 V), and Crss/Ciss ratio is minimized to suppress parasitic turn-on under high dv/dt conditions.

The PG-TO247-4 package separates driver source (Pin 3) from power source (Pin 2), enabling precise gate loop control. Dynamic parameters-including 17 pF Crss, 163 nC Qoss at 500 V, and 2869 pF Ciss-are characterized at 250 kHz with VDS = 500 V, supporting high-frequency operation in resonant topologies.

Key Specifications

Pinout & Package

PG-TO247-4 package with isolated tab (drain), four leads: Pin 1 = Drain, Pin 2 = Power Source (S), Pin 3 = Driver Source (S_driver), Pin 4 = Gate. Tab is electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0016090D and SCT3016AL, IMZA75R016M1HXKSA1 uniquely combines JEDEC industrial qualification, ultra-low Crss/Ciss ratio, and driver-source pin in a single 750 V/16 mΩ SiC MOSFET-making it optimal for mission-critical, high-reliability EVSE and solar applications demanding long-term stability at 175 °C.

Availability

IMZA75R016M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial deployment.

Supply support for IMZA75R016M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with over 20 years of SiC development expertise.

This device belongs to Infineon's CoolSiC™ Gen1 family-designed specifically for high-efficiency, high-reliability 750 V power conversion in harsh-environment applications such as renewable energy and e-mobility infrastructure.

FAQ

Can IMZA75R016M1HXKSA1 be used with 12 V gate drive?

No. The recommended turn-on voltage is 18 V, and minimum VGS(th) is 3.5 V. Driving at 12 V risks incomplete enhancement, increasing RDS(on) beyond 22 mΩ and causing excessive conduction loss and thermal runaway. Infineon specifies 0–18 V operation with 23 V absolute maximum static gate voltage.

Is the internal body diode suitable for synchronous rectification?

Yes-the integrated SiC body diode has 3.9 V forward voltage at 41.5 A and 28 ns forward recovery time at 1000 A/µs di/dt. It supports ZVS in totem-pole PFC and phase-shifted full-bridge topologies, eliminating need for external Schottky diodes in most 10–200 kHz designs.

What is the maximum allowable gate resistor value for 100 kHz switching?

With QG = 81 nC and typical gate driver peak current of ±4 A, RG ≤ 2.2 Ω ensures td(on)/td(off) < 50 ns. At 100 kHz, this yields <5% dead-time overhead. Higher RG increases switching loss and risks shoot-through due to slower turn-off; Infineon recommends RG = 1.8 Ω for balanced performance.

Does the PG-TO247-4 package require special mounting torque?

Yes. Mounting torque must be 60 Ncm for M3/M3.5 screws, applied 1.6 mm from case edge. Under-torque increases thermal resistance (Rth(j–c) = 0.47 °C/W nominal); over-torque risks die cracking or solder joint fracture. Thermal interface material must cover ≥90% of tab surface for rated power dissipation.