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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA75R020M1HXKSA1

Name: IMZA75R020M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA75R020M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA75R020M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA75R020M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMZA75R020M1HXKSA1 from Infineon is a 750 V, 20 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin (Pin 3), drain tab (Pin 1), gate (Pin 4), and power source (Pin 2). It delivers 261 A peak drain current, 67 nC total gate charge, and 133 nC output charge at 500 V - optimized for high-efficiency, high-frequency hard- and soft-switching in EV charging and solar PV inverters.

For engineers reviewing the IMZA75R020M1HXKSA1 datasheet, IMZA75R020M1HXKSA1 pinout, IMZA75R020M1HXKSA1 application, or IMZA75R020M1HXKSA1 equivalent, key selection criteria include R_DS(on) × Q_oss performance, dv/dt ruggedness (200 V/ns), internal body diode recovery (Q_fr = 135–212 nC), gate threshold voltage (3.5–5.6 V), and dedicated driver source pin for low-inductance gate loop control.

Technical Context

This CoolSiC™ G1 device uses Infineon's proprietary SiC die attach and features a unique Cr_ss/C_iss ratio (14/2217 pF) and high V_GS(th) (4.3 V typ) to suppress parasitic turn-on under unipolar gate driving. Its 0.54 °C/W junction-to-case thermal resistance supports high-power density designs up to T_j = 175 °C.

The 4-pin TO247 layout separates driver source (Pin 3) from power source (Pin 2), enabling precise gate control independent of high-current source path transients. Internal body diode operation is characterized with t_fr = 15–23 ns and Q_fr = 135–212 nC under di/dt = 1–4 kA/µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - rated blocking voltage across full operating temperature range (-55 to +175 °C), enabling direct use in 600–750 V DC bus systems without derating.
R_DS(on), max	27 mΩ at T_j = 175 °C, V_GS = 18 V - defines worst-case conduction loss in high-temperature operation, critical for thermal design margin.
Q_G, typ	67 nC - determines gate drive energy requirement and switching speed; enables fast turn-on/off with low external gate resistance.
Q_oss, typ @ 500 V	133 nC - directly impacts turn-off loss in hard-switching topologies; lower than comparable Si MOSFETs by >5×.
dv/dt ruggedness	200 V/ns - ensures reliable operation under high dV/dt transients common in SiC-based LLC and phase-shifted full-bridge converters.
E_oss, typ @ 500 V	23.9 µJ - quantifies stored energy in output capacitance; used to calculate turn-off loss in zero-voltage switching (ZVS) designs.
I_DM, max	261 A - peak pulsed drain current capability supports short-circuit withstand time and overload handling in UPS and EVSE applications.

Pinout & Package

Package: PG-TO247-4 - thermally enhanced 4-pin through-hole package with isolated tab (drain-connected), optimized for high-current, high-thermal-load applications. Tab serves as primary heat sink interface and electrical drain connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Primary high-current drain path and thermal interface; electrically connected to metal tab for low-inductance, low-thermal-resistance mounting.
Pin 2	Power Source	High-current source terminal for main power path; carries load current during conduction but not referenced for gate control.
Pin 3	Driver Source	Dedicated Kelvin source for gate driver return - eliminates source inductance impact on gate waveform, preventing oscillation and false turn-on.
Pin 4	Gate	Control input for MOSFET channel; requires 0–20 V operating range with recommended 0 V off / 18 V on bias per Infineon AN2018-09.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 333 mJ at I_D = 12.5 A, V_DD = 50 V - validates robustness against overvoltage transients in real-world power stages.
Low R_DS(on) × Q_fr	Enables superior efficiency in bidirectional topologies (e.g., dual-active-bridge) where body diode conduction occurs regularly.
Cr_ss/C_iss = 0.0063	Reduces Miller effect sensitivity - allows stable operation with unipolar gate drive and simplifies gate driver design vs. Si MOSFETs.
Infineon die attach technology	Improves long-term thermal cycling reliability and reduces interfacial thermal resistance between SiC die and copper baseplate.
Driver source pin (Kelvin source)	Eliminates source lead inductance from gate loop - ensures accurate V_GS control and prevents spurious turn-on during high di/dt switching events.

Applications

EV Charging Station Power Stage

Solar PV String Inverter DC-AC Stage

Use Scenario: 11–22 kW on-board and off-board chargers using totem-pole PFC and three-phase inverter stages.

IC Role / Device Role / Timing Role: High-side/low-side switching element in interleaved totem-pole PFC and 3L-TNPC inverter legs, operating at 100–200 kHz.

Use Value: Enables >99% system efficiency via low R_DS(on) × Q_oss and reduced switching losses - directly lowering heatsink size and cooling cost.

Use Scenario: Central and string inverters converting 800–1000 V DC from PV arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: Switching device in NPC and T-type multilevel inverter topologies, handling 30–50 A RMS output current.

Use Value: Supports 175 °C junction operation and 200 V/ns dv/dt immunity - improves reliability in outdoor, high-ambient-temperature installations.

Industrial UPS Output Stage

Energy Storage System Bi-directional Converter

Use Scenario: Online double-conversion UPS units delivering clean 50/60 Hz AC during grid outages, with battery backup.

IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase IGBT/SiC hybrid or full-SiC H-bridge, operating in PWM mode with <1 µs dead time.

Use Value: Driver source pin enables precise gate control under high di/dt load transients - reducing shoot-through risk and improving fault tolerance.

Use Scenario: Bi-directional DC-DC converters linking Li-ion battery banks (600–900 V) to HVDC microgrids or EV charging infrastructure.

IC Role / Device Role / Timing Role: Primary switch in dual-active-bridge (DAB) topology, conducting both forward and reverse current via internal body diode.

Use Value: Low Q_fr (135–212 nC) and fast t_fr (15–23 ns) minimize reverse conduction loss and improve ZVS window - increasing power density and efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0021120K	R_DS(on) = 21 mΩ (typ), Q_G = 72 nC, no driver source pin, TO247-3 package	Lacks Kelvin source - requires careful PCB layout to mitigate gate oscillation; higher Q_G increases gate drive loss	Select when cost sensitivity outweighs gate control precision; verify layout-induced ringing in high-di/dt designs.
ROHM SCT3022KL	R_DS(on) = 22 mΩ (typ), Q_oss = 145 nC @ 500 V, TO247-4 with driver source, V_GS(th) = 5.5–7.5 V	Higher V_GS(th) improves noise immunity but requires higher gate drive voltage; slightly higher Q_oss increases turn-off loss	Prefer for ultra-noise-sensitive environments; confirm gate driver compatibility with 20 V absolute max rating.

Compared with C3M0021120K and SCT3022KL, IMZA75R020M1HXKSA1 offers the lowest R_DS(on) × Q_oss product and industry-leading dv/dt ruggedness, making it optimal for high-reliability, high-frequency PFC and inverter stages where gate control fidelity and transient immunity are critical.

Availability

IMZA75R020M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply, long lifecycle support, and traceable sourcing from qualified distributors.

Supply support for IMZA75R020M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with over 20 years of SiC development expertise.

This part belongs to Infineon's CoolSiC™ G1 family - designed specifically for high-efficiency, high-reliability 750 V power conversion in renewable energy, e-mobility, and industrial SMPS applications.

FAQ

Can IMZA75R020M1HXKSA1 be used with unipolar gate drive?

Yes - its high V_GS(th) (3.5–5.6 V) and low Cr_ss/C_iss ratio make it inherently resistant to parasitic turn-on, enabling reliable unipolar gate drive (0 V/18 V) without negative voltage bias. This simplifies gate driver design and reduces component count in cost-sensitive systems.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum transient V_GS is 25 V for pulses ≤ 500 ns with ≤ 1% duty cycle. Exceeding this risks permanent gate oxide damage. For continuous operation, Infineon specifies V_GS ≤ 20 V, with recommended turn-on at 18 V and turn-off at 0 V per Application Note AN2018-09.

Why is the driver source pin (Pin 3) not interchangeable with the power source pin (Pin 2)?

Pin 3 is a Kelvin sense connection for gate driver return, carrying only gate loop current (<100 mA), while Pin 2 conducts full load current (up to 75 A DC). Swapping them introduces high di/dt noise into the gate control path, causing oscillation, false turn-on, and potential device failure - as explicitly warned in the datasheet.

Is the internal body diode suitable for continuous reverse conduction?

No - the internal body diode is optimized for commutation and freewheeling, not steady-state conduction. Its forward voltage (3.9–5.3 V at 32.5 A) and recovery characteristics (Q_fr, t_fr) are specified for switching transitions. Continuous reverse current must be limited per SOA curves and thermal limits to avoid exceeding T_j = 175 °C.

IMZA75R020M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 32.5A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 11.7mA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 2217 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IMZA75R020M1HXKSA1 FAQ

1.How can I place an order for IMZA75R020M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA75R020M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA75R020M1HXKSA1 reliable?

The price and inventory of IMZA75R020M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R020M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA75R020M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R020M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA75R020M1HXKSA1?

IMZA75R020M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA75R020M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA75R020M1HXKSA1?

For technical support, including IMZA75R020M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R020M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA75R020M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA75R020M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R020M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA75R020M1HXKSA1?

All IMZA75R020M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R020M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA75R020M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA75R020M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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