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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA75R027M1HXKSA1

Name: IMZA75R027M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA75R027M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA75R027M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA75R027M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMZA75R027M1HXKSA1 from Infineon is a 750 V, 27 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency hard- and soft-switching power stages in EV charging, solar inverters, and UPS systems. It delivers 198 A peak drain current, 49 nC total gate charge, and 100 nC output charge at 500 V, enabling high-frequency operation with low switching losses.

For engineers reviewing the IMZA75R027M1HXKSA1 datasheet, IMZA75R027M1HXKSA1 pinout, IMZA75R027M1HXKSA1 application, or IMZA75R027M1HXKSA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), internal body diode recovery behavior, and dedicated driver source pin for improved gate control in high-di/dt environments.

Technical Context

This CoolSiC™ Gen1 device uses silicon carbide substrate to achieve wide-bandgap advantages: high breakdown field strength enables 750 V rating with low on-resistance, while low Crss/Ciss ratio (10 pF / 1668 pF) and high V_GS(th) (4.3 V) suppress parasitic turn-on under unipolar gate drive. Its integrated body diode exhibits 105–164 nC forward recovery charge and 13–21 ns recovery time depending on di/dt.

The PG-TO247-4 package separates driver source (Pin 3) from power source (Pin 2), reducing source inductance in the gate loop and enabling precise Miller clamping. The tab is electrically connected to drain (Pin 1), requiring insulated mounting in high-voltage topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Withstands DC bus voltages up to 750 V across full junction temperature range (-55 °C to +175 °C).
R_DS(on), typ	27 mΩ @ V_GS = 18 V, I_D = 24.5 A, T_j = 25 °C - Enables low conduction loss in high-current 750 V systems.
Q_G, typ	49 nC - Low total gate charge supports fast switching with moderate gate driver power requirements.
Q_oss, typ @ 500 V	100 nC - Energy-related output capacitance determines turn-off loss and resonant behavior in ZVS circuits.
dv/dt ruggedness	200 V/ns - Robust against voltage transients during commutation, critical for reliable operation in noisy high-power converters.
I_DM, max	198 A - Peak pulsed drain current capability supports overload and fault conditions without immediate failure.
V_GS(th), typ	4.3 V - Higher threshold than Si MOSFETs improves noise immunity and reduces risk of unintended turn-on.

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated tab (drain-connected), optimized for high-power thermal and electrical performance. Tab serves as primary drain terminal and heat sink interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; electrically tied to metal tab - requires insulation from heatsink unless referenced to system ground.
Pin 2	Power Source	Source connection for main power path; carries full load current and forms return path for output stage.
Pin 3	Driver Source	Dedicated Kelvin source for gate driver feedback loop - eliminates source inductance impact on gate waveform fidelity.
Pin 4	Gate	Control input for MOSFET channel; driven relative to Pin 3 (not Pin 2) to ensure accurate V_GS control.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse avalanche energy rating of 251 mJ, supporting robust operation under overvoltage faults.
Best-in-class R_DS(on) × Q_fr	Enables high-efficiency PFC and inverter stages where diode reverse recovery dominates losses.
Low Crss/Ciss ratio (10/1668 pF)	Reduces Miller-induced gate oscillation and improves immunity to false turn-on in high-di/dt applications.
Driver source pin (Kelvin source)	Allows gate driver to reference switch node directly, eliminating source inductance effects on switching timing and overshoot.
Infineon die attach technology	Enhances thermal cycling reliability and power cycle lifetime in automotive and industrial environments.

Applications

EV Charging Station Power Stage

Solar PV String Inverter DC-AC Stage

Use Scenario: 11–22 kW onboard and offboard chargers using totem-pole PFC and three-phase inverter topologies.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in bidirectional AC-DC and DC-DC conversion stages operating at 100–200 kHz.

Use Value: 27 mΩ R_DS(on) and 100 nC Q_oss enable >99% PFC efficiency at 750 V bus, reducing thermal design burden and cooling cost.

Use Scenario: Central and string inverters converting DC from photovoltaic arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: Switching element in NPC or T-type three-level inverter legs handling 1000 V DC input and 50/60 Hz AC output.

Use Value: 750 V rating and 200 V/ns dv/dt ruggedness support direct integration into 1000 V-class systems with reduced snubber complexity.

UPS Inverter Output Stage

Energy Storage System Bi-directional Converter

Use Scenario: Online double-conversion UPS delivering clean 230 V / 400 V AC during grid outages with <10 ms transfer time.

IC Role / Device Role / Timing Role: Final-stage switching device in high-frequency PWM inverter driving transformer-isolated output filter.

Use Value: Low Q_G (49 nC) and fast switching (tr = 12 ns, tf = 9 ns) allow >50 kHz carrier frequencies, shrinking magnetics size by >30%.

Use Scenario: Bi-directional DC-DC converter linking battery packs (400–800 V) to HVDC bus in grid-scale ESS and battery formation systems.

IC Role / Device Role / Timing Role: Primary switching transistor in interleaved buck-boost or dual-active-bridge topology operating at 100–300 kHz.

Use Value: Internal body diode with 105–164 nC Q_fr ensures low-loss freewheeling during zero-voltage switching transitions, improving round-trip efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0027070D	700 V rating, 27 mΩ, TO247-3L package (no driver source pin); higher Q_oss (125 nC @ 500 V).	Lacks Kelvin source - requires careful PCB layout to minimize gate loop inductance; lower V_DSS limits use in 750 V+ systems.	Select when cost sensitivity outweighs need for ultra-low gate noise or 750 V margin; verify layout for gate ringing.
ROHM SCT3027KLH	650 V rating, 27 mΩ, TO247-4L package; lower Q_G (36 nC), but higher Crss (14 pF) and lower V_GS(th) (2.7 V).	Reduced voltage headroom and lower threshold increase susceptibility to parasitic turn-on in high-noise environments.	Prefer for 650 V systems prioritizing minimal gate drive loss; avoid in 750 V bus or high-di/dt applications without enhanced gate protection.

Compared with C3M0027070D and SCT3027KLH, IMZA75R027M1HXKSA1 uniquely combines 750 V rating, driver-source pin, and best-in-class R_DS(on) × Q_fr, making it optimal for high-reliability, high-efficiency 750 V+ topologies where gate control fidelity and avalanche robustness are critical.

Availability

IMZA75R027M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified production lots.

Supply support for IMZA75R027M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to Infineon's CoolSiC™ Gen1 family - engineered specifically for high-efficiency, high-reliability 750 V power conversion in industrial, renewable energy, and e-mobility applications.

FAQ

What is the function of the driver source pin (Pin 3) in IMZA75R027M1HXKSA1?

Pin 3 is a Kelvin source terminal dedicated solely to gate driver feedback, physically separated from the main power source (Pin 2). It eliminates voltage drop across source bond wires or PCB traces from the gate control loop, ensuring accurate V_GS regulation and suppressing Miller-induced oscillations during high-di/dt switching events.

Can IMZA75R027M1HXKSA1 replace a silicon IGBT in an existing 750 V inverter design?

Yes - its 750 V V_DSS, 198 A peak current, and 27 mΩ R_DS(on) support direct replacement in many IGBT-based topologies. However, gate drive voltage must be adjusted to 18 V (not 15 V), layout must accommodate the driver source pin, and snubber networks may require reduction due to faster switching and lower Q_oss.

Is the internal body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated SiC body diode has characterized forward voltage (3.9–5.3 V), recovery charge (105–164 nC), and recovery time (13–21 ns). It supports synchronous rectification in hard-switched and ZVS topologies, though external SiC Schottky diodes may be preferred for lowest Q_rr in ultra-high-frequency designs.

What is the maximum recommended gate resistor value for reliable switching?

Based on typical gate charge (49 nC) and recommended gate drive voltage (18 V), a 1.8 Ω gate resistor is validated in the datasheet for 500 V, 24.5 A switching. For higher currents or stricter EMI requirements, values up to 5.6 Ω maintain safe dv/dt (<200 V/ns) and prevent oscillation - always verify with actual layout and driver IC output capability.

IMZA75R027M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 24.5A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 8.8mA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1668 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IMZA75R027M1HXKSA1 FAQ

1.How can I place an order for IMZA75R027M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA75R027M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA75R027M1HXKSA1 reliable?

The price and inventory of IMZA75R027M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R027M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA75R027M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R027M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA75R027M1HXKSA1?

IMZA75R027M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA75R027M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA75R027M1HXKSA1?

For technical support, including IMZA75R027M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R027M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA75R027M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA75R027M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R027M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA75R027M1HXKSA1?

All IMZA75R027M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R027M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA75R027M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA75R027M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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