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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA75R040M1HXKSA1

Name: IMZA75R040M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA75R040M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA75R040M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA75R040M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMZA75R040M1HXKSA1 from Infineon is a 750 V, 40 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, optimized for high-efficiency hard-switching and soft-switching topologies in EV charging infrastructure and solar PV inverters. It features 135 A peak drain current, 34 nC total gate charge, and integrated body diode with 75 nC typical reverse recovery charge.

For engineers reviewing the IMZA75R040M1HXKSA1 datasheet, IMZA75R040M1HXKSA1 pinout, IMZA75R040M1HXKSA1 application, or IMZA75R040M1HXKSA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), and dedicated driver source pin for reduced common-source inductance.

Technical Context

This CoolSiC™ G1 device leverages silicon carbide's wide bandgap to deliver low conduction loss (40 mΩ R_DS(on) at 25 °C) and superior switching efficiency via minimized Q_oss (68 nC @ 500 V) and Cr_ss/C_iss ratio. Its 750 V V_DSS rating supports bus voltages beyond 500 V in industrial and renewable energy systems.

The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to decouple gate loop inductance from high-current paths, enabling robust unipolar gate driving and suppressing parasitic turn-on. Internal die attach technology ensures thermal reliability up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Withstands DC bus voltages up to 750 V across full operating temperature range (-55 °C to +175 °C).
R_DS(on), typ	40 mΩ @ V_GS = 18 V, T_j = 25 °C - Enables low conduction loss in high-current power stages.
Q_G, typ	34 nC @ V_DD = 500 V - Supports fast, low-loss switching with moderate gate drive power requirement.
Q_oss, typ @ 500 V	68 nC - Reduces turn-off energy loss (E_oss = 12.2 µJ) in hard-switched converters.
I_DM, max	135 A - Sustains short-circuit pulses without failure under controlled gate conditions.
dv/dt ruggedness	200 V/ns - Resists false triggering during high dV/dt transients in bridge-leg configurations.
V_GS(th), typ	4.3 V - Higher threshold than Si MOSFETs improves noise immunity and reduces risk of spurious turn-on.

Pinout & Package

IMZA75R040M1HXKSA1 uses the PG-TO247-4 package with isolated tab (Drain), four leads, and dedicated Driver Source pin to minimize gate loop inductance. The tab serves as the Drain terminal and must be electrically connected to the heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; thermally coupled to heatsink via isolated metal tab.
Pin 2	Power Source	Source connection for main current path; carries full load current to external circuitry.
Pin 3	Driver Source	Dedicated low-inductance return for gate driver loop; isolates gate control from power source noise.
Pin 4	Gate	Control input for MOSFET channel; requires 18 V turn-on and 0 V turn-off per recommended operating range.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse avalanche energy rating of 170 mJ, enabling robust operation under overvoltage stress.
Low R_DS(on) × Q_fr	Minimizes combined conduction and reverse recovery losses in bidirectional switching applications like totem-pole PFC.
Cr_ss/C_iss ratio < 0.0064	Reduces Miller effect, improving gate drive stability and enabling higher switching frequencies without oscillation.
Infineon proprietary die attach	Ensures long-term thermal cycling reliability and low interfacial resistance between SiC die and copper baseplate.

Applications

EV Charging Station Power Stage

Solar PV String Inverter

Use Scenario: 11–22 kW on-board and off-board chargers using interleaved LLC or phase-shifted full-bridge topologies.

IC Role / Device Role / Timing Role: High-side switch in primary-side resonant converter stage handling 700–1000 V DC bus.

Use Value: 40 mΩ R_DS(on) and 34 nC Q_G enable >98% system efficiency at 100 kHz switching frequency while maintaining thermal margin at 175 °C T_j.

Use Scenario: Three-phase string inverters converting DC from photovoltaic arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC or T-type inverter leg operating at 16–32 kHz.

Use Value: 200 V/ns dv/dt ruggedness and low Q_oss reduce EMI filter size and improve fault ride-through during grid transients.

Industrial UPS Output Stage

Energy Storage System Bi-directional Converter

Use Scenario: Double-conversion online UPS units delivering clean 50/60 Hz AC output with zero transfer time.

IC Role / Device Role / Timing Role: IGBT replacement in output H-bridge inverter stage managing battery-to-grid and grid-to-battery power flow.

Use Value: Integrated body diode with 75 nC Q_fr enables efficient synchronous rectification in bi-directional operation without external anti-parallel diodes.

Use Scenario: DC-DC bidirectional converters linking lithium-ion battery banks to medium-voltage DC distribution buses (750–1000 V).

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology regulating power transfer direction and magnitude.

Use Value: 135 A peak current rating and 0.81 °C/W R_th(j-c) support continuous 50 kW operation with forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040070D	700 V V_DSS, 40 mΩ R_DS(on), no driver source pin, TO247-3 package	Lacks dedicated driver source; requires careful PCB layout to mitigate common-source inductance in high-dI/dt designs	Select when cost sensitivity outweighs need for ultra-low gate loop inductance and layout simplification is not critical
ROHM SCT3040KL	650 V V_DSS, 40 mΩ R_DS(on), 3-pin TO247, lower Q_oss (55 nC @ 500 V)	Not rated for 750 V bus systems; limited to 650 V DC-link applications such as server SMPS or telecom rectifiers	Choose only for 650 V-class systems where lower Q_oss justifies reduced voltage margin and absence of driver source pin

Compared with C3M0040070D and SCT3040KL, IMZA75R040M1HXKSA1 uniquely combines 750 V rating, driver source pin, and best-in-class R_DS(on) × Q_fr, making it optimal for next-generation EV chargers and 1500 V solar inverters requiring both voltage headroom and layout robustness.

Availability

IMZA75R040M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply, long lifecycle support, and JEDEC-qualified reliability for industrial environments.

Supply support for IMZA75R040M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in silicon carbide innovation since 2001.

This device belongs to the CoolSiC™ G1 family-designed specifically for high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial motor drives where 750 V SiC performance and ruggedness are mandatory.

FAQ

What is the maximum recommended gate drive voltage for reliable operation?

The datasheet specifies a recommended turn-on voltage of 18 V and turn-off voltage of 0 V. Static gate-source voltage must remain within –2 V to +20 V during operation, with transient limits of –10 V to +25 V for ≤500 ns pulses. Exceeding these ranges risks accelerated V_GS(th) drift and R_DS(on) degradation over lifetime.

Can Pin 2 (Power Source) and Pin 3 (Driver Source) be shorted externally?

No. The datasheet explicitly warns that exchanging or shorting Pin 2 and Pin 3 may cause malfunction. Pin 3 provides a low-inductance gate return path independent of high-current source routing; shorting it to Pin 2 reintroduces common-source inductance and defeats the design benefit of the 4-pin configuration.

Is the internal body diode suitable for synchronous rectification in ZVS topologies?

Yes. The device includes an integrated SiC body diode characterized with 75 nC typical Q_fr and 19 ns forward recovery time at 1000 A/µs di/dt. Its low Q_fr and soft recovery behavior make it suitable for zero-voltage switching in totem-pole PFC and resonant DC-DC converters without external diode parallelization.

What thermal derating applies above 25 °C case temperature?

Power dissipation is linearly derated above 25 °C case temperature, with P_tot = 185 W at T_C = 25 °C decreasing to approximately 110 W at T_C = 100 °C, based on the published P_tot vs. T_C curve. Thermal resistance junction-to-case is 0.81 °C/W, verified per JESD51-14.

IMZA75R040M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 16.6A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1135 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 185W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IMZA75R040M1HXKSA1 FAQ

1.How can I place an order for IMZA75R040M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA75R040M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA75R040M1HXKSA1 reliable?

The price and inventory of IMZA75R040M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R040M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA75R040M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R040M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA75R040M1HXKSA1?

IMZA75R040M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA75R040M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA75R040M1HXKSA1?

For technical support, including IMZA75R040M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R040M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA75R040M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA75R040M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R040M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA75R040M1HXKSA1?

All IMZA75R040M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R040M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA75R040M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA75R040M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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