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Infineon Technologies IMZA75R060M1HXKSA1
- Part No.:
- IMZA75R060M1HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
IMZA75R060M1HXKSA1.pdf
- Description:
- SILICON CARBIDE MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:238
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Product details
Overview
IMZA75R060M1HXKSA1 from Infineon is a 750 V, 60 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency hard-switching power stages in EV charging, solar inverters, and UPS systems. It features 100% avalanche-tested ruggedness, typ. QG of 23 nC, RDS(on) × Qfr optimization, and integrated body diode with 3.9 V forward voltage at 11.1 A.
For engineers reviewing the IMZA75R060M1HXKSA1 datasheet, IMZA75R060M1HXKSA1 pinout, IMZA75R060M1HXKSA1 application, or IMZA75R060M1HXKSA1 equivalent, key selection criteria include its 750 V blocking capability, low Crss/Ciss ratio, high VGS(th) of 4.3 V (typ), driver-source pin architecture for gate loop inductance reduction, and JEDEC-qualified industrial reliability up to 175 °C junction temperature.
Technical Context
This CoolSiC™ Gen1 device uses silicon carbide die with proprietary die attach technology and an internal body diode. Its gate threshold voltage (VGS(th) = 4.3 V typ) and low reverse transfer capacitance (Crss = 4.8 pF) suppress parasitic turn-on during high dv/dt switching, enabling robust unipolar gate driving at 18 V.
The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to decouple gate drive return path from high-current source return, reducing gate oscillation and improving switching control fidelity. The device is rated for 200 V/ns dv/dt ruggedness and fully qualified per JEDEC JESD47 for industrial applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 750 V - Enables operation in 600–800 V DC bus systems (e.g., 750 V EV chargers, 1000 V PV string inverters) without derating. |
| RDS(on), typ | 60 mΩ @ VGS = 18 V, Tj = 25 °C - Delivers low conduction loss at rated current (IDM = 89 A peak), supporting high-power density designs. |
| QG, typ | 23 nC - Enables fast, low-loss switching with standard gate drivers (e.g., 1EDN7512B, 2EDF7275K), reducing drive power demand. |
| Crss / Ciss | 4.8 pF / 779 pF - Low Crss/Ciss ratio (0.006) minimizes Miller effect, enhancing immunity to false turn-on in high-side configurations. |
| Qoss @ 500 V | 54 nC - Low output charge reduces turn-off energy (Eoss = 9.6 µJ), critical for efficiency in hard-switched PFC and DC-DC topologies. |
| VGS(th) | 4.3 V (typ) - Higher than Si MOSFETs, enabling stable operation with 15–20 V gate drive and reduced susceptibility to noise-induced turn-on. |
| dv/dt ruggedness | 200 V/ns - Validated under transient stress, allowing reliable operation in fast-switching circuits without external snubbers. |
Pinout & Package
PG-TO247-4 package with isolated tab (Drain), four leads: Pin 1 = Drain, Pin 2 = Power Source, Pin 3 = Driver Source, Pin 4 = Gate. Tab is electrically connected to Drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Drain | Main high-voltage power terminal; electrically tied to metal tab for low-inductance, high-current drain connection and thermal dissipation. |
| Pin 2 | Power Source | High-current source return path for main load current; connects to power ground or low-side shunt in half-bridge configuration. |
| Pin 3 | Driver Source | Dedicated low-noise gate drive return; isolates gate loop from power loop inductance, suppressing gate ringing and improving switching stability. |
| Pin 4 | Gate | Control input for MOSFET channel; requires 0–18 V drive with 7 Ω internal gate resistance; sensitive to ESD and layout parasitics. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Single-pulse EAS = 113 mJ ensures guaranteed ruggedness under overvoltage transients in motor drives and grid-tied inverters. |
| Driver source pin (Kelvin source) | Eliminates source inductance impact on gate control, enabling precise VGS regulation and consistent switching timing across temperature and load. |
| Low RDS(on) × Qfr | Optimized for high-frequency hard switching (e.g., >100 kHz totem-pole PFC), minimizing combined conduction and recovery losses. |
| JEDEC industrial qualification | Validated for continuous operation from –55 °C to +175 °C junction temperature, supporting deployment in outdoor EVSE and telecom rectifiers. |
| Infineon die attach technology | Enhances thermal cycling reliability and long-term power cycle endurance, critical for 15+ year field life in solar and storage systems. |
Applications
| EV Charging Station Power Stage | Solar PV String Inverter DC-AC Stage |
|---|---|
|
Use Scenario: 22 kW–150 kW AC/DC front-end with interleaved totem-pole PFC and three-level NPC inverter. IC Role / Device Role / Timing Role: High-side and low-side SiC MOSFET switch in bidirectional PFC and inverter legs; operates at 70–100 kHz with zero-voltage switching assist. Use Value: 60 mΩ RDS(on) and 54 nC Qoss reduce conduction and turn-off losses by >25% vs. comparable 650 V Si devices, enabling >99% system efficiency at full load. |
Use Scenario: 10–30 kW string inverter with transformerless topology and DC-link voltage up to 1100 V. IC Role / Device Role / Timing Role: Switching element in three-phase T-type inverter bridge; handles 750 V DC bus and 50 A RMS phase current. Use Value: 750 V rating eliminates need for series-connected Si MOSFETs; 200 V/ns dv/dt ruggedness supports fast switching without snubbers, simplifying gate drive design. |
| Industrial UPS Inverter Module | Energy Storage System Bi-directional DC-DC Converter |
|
Use Scenario: Online double-conversion UPS with 400 V DC bus and 10–50 kVA output; requires high reliability and thermal margin. IC Role / Device Role / Timing Role: Output stage switch in IGBT-replacement inverter; driven with 18 V gate voltage and active Miller clamp. Use Value: 175 °C max Tj and JEDEC qualification ensure stable operation under sustained overload and ambient temperatures up to 60 °C, extending service intervals. |
Use Scenario: 500–1000 V battery-to-48 V/12 V bi-directional DC-DC for BESS and microgrids; operates in both buck and boost modes. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) converter; subjected to high di/dt and repetitive avalanche stress during soft-start. Use Value: 113 mJ single-pulse EAS and 89 A IDM support safe operation during battery short-circuit events and inrush currents without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed C3M0065070D | 700 V rating, 65 mΩ RDS(on), no Kelvin source pin, TO247-3 package | Lacks driver source pin; requires careful PCB layout to mitigate gate loop inductance; lower VDSS limits use in 750 V+ systems | Select when cost sensitivity outweighs gate control precision and 750 V margin is not required. |
| ROHM SCT3060AL | 650 V rating, 60 mΩ RDS(on), Kelvin source, but higher Crss (7.5 pF) and lower VGS(th) (2.7 V) | Lower VGS(th) increases risk of spurious turn-on in noisy environments; 650 V rating requires derating in 750 V bus applications | Select only with enhanced gate drive filtering and strict bus voltage control below 600 V. |
Compared with C3M0065070D and SCT3060AL, IMZA75R060M1HXKSA1 uniquely combines 750 V rating, Kelvin source, and high VGS(th) to deliver superior system-level robustness in unregulated 750 V DC applications-especially where gate drive simplicity, avalanche margin, and thermal endurance are prioritized over minimal RDS(on) variation.
Availability
IMZA75R060M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial-grade production.
Supply support for IMZA75R060M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies since the early 2000s.
This device belongs to Infineon's CoolSiC™ Gen1 family, engineered specifically for high-efficiency, high-reliability power conversion in industrial and renewable energy systems operating at 750 V DC bus levels.
FAQ
Can IMZA75R060M1HXKSA1 be used in parallel configurations?
Yes, it supports paralleling due to positive RDS(on) temperature coefficient and matched dynamic parameters across wafers. However, layout symmetry-especially gate and source loop inductance-is critical. Use identical gate resistors, Kelvin source routing, and thermally balanced mounting to ensure current sharing within ±10% at full load.
What is the maximum recommended gate resistor value for hard-switching at 100 kHz?
For 100 kHz hard-switching with 18 V gate drive, RG ≤ 4.7 Ω is recommended to maintain td(on)/td(off) < 20 ns and minimize switching loss. With its 23 nC QG and 7 Ω internal RG, total effective gate resistance must stay below 10 Ω to avoid excessive rise/fall times and overshoot.
Is the internal body diode suitable for synchronous rectification?
No-the internal body diode has 3.9 V forward voltage and 57 nC Qfr (typ), making it unsuitable for synchronous rectification. External Schottky or SiC SBDs are required for low-loss freewheeling. The device is intended for controlled switching only, not body-diode conduction.
Does the driver source pin require a separate PCB trace back to the gate driver ground?
Yes-Pin 3 (Driver Source) must connect directly to the gate driver IC's ground reference via a dedicated low-inductance trace, independent of the power source (Pin 2) return path. Mixing these paths reintroduces source inductance into the gate loop, negating the Kelvin source benefit and risking oscillation.
IMZA75R060M1HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 750 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 20V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 11.1A, 20V
- Vgs(th) (Max) @ Id:
- 5.6V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 18 V
- Vgs (Max):
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 779 pF @ 500 V
- FET Feature:
- -
- Power Dissipation (Max):
- 144W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4
IMZA75R060M1HXKSA1 FAQ
1.How can I place an order for IMZA75R060M1HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IMZA75R060M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IMZA75R060M1HXKSA1 reliable?
The price and inventory of IMZA75R060M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R060M1HXKSA1 is usually 5 days.
3.What payment methods are accepted for IMZA75R060M1HXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R060M1HXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IMZA75R060M1HXKSA1?
IMZA75R060M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IMZA75R060M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IMZA75R060M1HXKSA1?
For technical support, including IMZA75R060M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R060M1HXKSA1 requirements.
6.How does Aetrix verify that IMZA75R060M1HXKSA1 is sourced from the original manufacturer or authorized distributors?
All IMZA75R060M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R060M1HXKSA1 meets industry standards.
7.What is the process for return or replacement of IMZA75R060M1HXKSA1?
All IMZA75R060M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R060M1HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IMZA75R060M1HXKSA1 part is unused and in its original packaging.
Return procedure for IMZA75R060M1HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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