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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA75R090M1HXKSA1

Name: IMZA75R090M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA75R090M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA75R090M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA75R090M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMZA75R090M1HXKSA1 from Infineon is a 750 V silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency hard- and soft-switching power stages. It delivers R_DS(on) = 90 mΩ (typ), Q_G = 10 nC (typ), Q_oss = 22 nC @ 500 V, and features integrated body diode with Q_fr = 38 nC (typ), enabling high-frequency operation in EV charging and solar inverters.

For engineers reviewing the IMZA75R090M1HXKSA1 datasheet, IMZA75R090M1HXKSA1 pinout, IMZA75R090M1HXKSA1 application, or IMZA75R090M1HXKSA1 equivalent, key selection criteria include avalanche ruggedness (E_AS = 42 mJ), dv/dt immunity (200 V/ns), gate threshold voltage (V_GS(th) = 3.5–5.6 V), and thermal resistance (R_th(j-c) = 1.74 °C/W).

Technical Context

This CoolSiC™ Gen1 device uses wide-bandgap SiC material to achieve low conduction and switching losses simultaneously. Its optimized Cr_ss/C_iss ratio (2.5 pF / 351 pF) and high V_GS(th) suppress parasitic turn-on under high dv/dt conditions, supporting unipolar gate driving without active Miller clamping.

The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to eliminate source inductance in the gate loop, reducing switching oscillation and improving gate control fidelity. Internal die attach technology ensures long-term thermal stability up to T_j = 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Supports DC bus voltages up to 500–600 V in industrial and EV charging systems with 20% margin.
R_DS(on), typ	90 mΩ @ V_GS = 18 V, T_j = 25 °C - Enables <1.5 W conduction loss at 4 A RMS in 3.3 kW PFC stages.
Q_G, typ	10 nC - Reduces gate drive power requirement and allows use of lower-current gate drivers (e.g., 1–2 A peak).
Q_oss, typ @ 500 V	22 nC - Low stored output charge minimizes turn-off energy loss (E_oss = 4.4 µJ) in ZVS/ZCS topologies.
dv/dt ruggedness	200 V/ns - Ensures reliable operation in high-speed half-bridge configurations without false triggering.
T_j,max	175 °C - Permits compact heatsink design and high-power density in space-constrained UPS and telecom SMPS.
R_th(j-c)	1.74 °C/W - Enables direct mounting to baseplate with ≤80 °C case temperature rise at 86 W dissipation.

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated tab (Drain), featuring separate Driver Source (Pin 3) and Power Source (Pin 2) terminals to decouple gate loop inductance from main current path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	High-voltage power terminal connected to heatsink; electrically tied to drain metallization.
Pin 2	Power Source	Main current return path for load current; connects to source of external power circuitry.
Pin 3	Driver Source	Reference node for gate driver IC; eliminates source inductance impact on gate voltage waveform.
Pin 4	Gate	Control input for MOSFET channel; requires 0–20 V swing with 16 Ω internal gate resistance.

Key Features

Feature	Design Value
100% avalanche tested	Single-pulse E_AS = 42 mJ ensures robustness against overvoltage transients in uncontrolled line surges.
Low R_DS(on) × Q_fr	90 mΩ × 38 nC = 3.42 Ω·nC - Minimizes combined conduction and reverse recovery loss in bidirectional AC switches.
High V_GS(th) + low C_rss	V_GS(th) = 4.3 V (typ), C_rss = 2.5 pF - Reduces susceptibility to Miller-induced turn-on during high dv/dt commutation.
Separate driver source pin	Enables Kelvin-source gate control - improves switching waveform fidelity and reduces overshoot/undershoot by >30% vs. 3-pin TO247.
JEDEC-qualified for industrial	Validated for continuous operation at T_j = 175 °C and 1000-cycle temperature cycling per JESD22-A104.

Applications

EV Charging Station Power Stage

Solar PV String Inverter

Use Scenario: 11–22 kW on-board and off-board chargers using totem-pole PFC and DC–DC isolation stages.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC; operates at 100–200 kHz with zero-voltage switching.

Use Value: 90 mΩ R_DS(on) and 22 nC Q_oss enable >99% PFC efficiency at full load while maintaining thermal margin below 100 °C case temperature.

Use Scenario: Three-phase string inverters converting DC from 600–1000 V PV arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: Bridge-leg switch in NPC or T-type three-level topology; handles 50–100 kHz switching with bidirectional conduction.

Use Value: Integrated body diode with 38 nC Q_fr and 3.9 V V_SD reduces reverse recovery loss by 40% vs. Si IGBTs, lowering heatsink size by 35%.

Industrial UPS Output Stage

Telecom Server SMPS

Use Scenario: Double-conversion online UPS delivering clean 50/60 Hz AC with <5 ms transfer time and 96% system efficiency.

IC Role / Device Role / Timing Role: Inverter leg switch in full-bridge configuration; supports 50 kHz PWM with synchronous rectification.

Use Value: 200 V/ns dv/dt rating and 175 °C T_j,max allow stable operation under short-circuit fault conditions without desaturation protection complexity.

Use Scenario: 48 V input, 12 V/54 A output server power supply using phase-shifted full-bridge with synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side high-side MOSFET; switched at 300–500 kHz with ZVS-assisted turn-on.

Use Value: 1.74 °C/W R_th(j-c) and low Q_G reduce gate drive loss and thermal footprint, enabling 1200 W/in³ power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0090070D	R_DS(on) = 90 mΩ, but Q_G = 12.5 nC and no driver source pin; Cr_ss/C_iss = 3.1 pF / 420 pF.	Lacks Kelvin source; requires external gate loop optimization to match dv/dt immunity and switching waveform integrity.	Select when gate driver layout allows tight source loop routing and cost sensitivity outweighs layout simplification benefit.
ROHM SCT3090AL	R_DS(on) = 90 mΩ, Q_G = 11.5 nC, V_GS(th) = 2.7–4.3 V; lower V_GS(th) increases risk of spurious turn-on at high dv/dt.	Requires active Miller clamp or negative turn-off bias in >100 kHz hard-switching due to lower V_GS(th).	Select for cost-sensitive telecom SMPS where gate drive complexity is acceptable and thermal margin is ample.

Compared with C3M0090070D and SCT3090AL, IMZA75R090M1HXKSA1 provides superior gate control via dedicated driver source pin and higher V_GS(th), reducing design risk in high-dv/dt, high-frequency industrial power converters without added gate drive components.

Availability

IMZA75R090M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZA75R090M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with >30 years of high-reliability power device development.

This part belongs to the CoolSiC™ Gen1 750 V MOSFET product line, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems operating at elevated temperatures and fast switching speeds.

FAQ

What is the maximum recommended gate voltage for reliable long-term operation?

The absolute maximum transient gate-source voltage is 25 V (tp ≤ 500 ns, duty cycle ≤ 1%), but Infineon specifies 20 V as the upper limit of the gate voltage operating range. For robust lifetime performance, the recommended turn-on voltage is 18 V and turn-off voltage is 0 V. Exceeding 20 V continuously may accelerate gate oxide degradation and increase R_DS(on) drift over time.

Can Pin 2 (Power Source) and Pin 3 (Driver Source) be shorted externally?

No - Infineon explicitly warns that exchanging or shorting Pin 2 and Pin 3 will cause malfunction. The driver source pin (Pin 3) must connect only to the gate driver's reference node, while Pin 2 carries full load current. Shorting them reintroduces source inductance into the gate loop, degrading switching waveforms and increasing EMI and oscillation risk.

Is the internal body diode suitable for synchronous rectification?

Yes - the integrated SiC body diode has V_SD = 3.9 V (typ) at 4.7 A and t_fr = 7 ns (typ), with Q_fr = 38 nC (typ). Its fast, soft recovery and low forward voltage make it viable for synchronous rectification in LLC and phase-shifted full-bridge topologies up to 200 kHz, provided gate timing accounts for reverse recovery tail.

What thermal interface material is qualified for use with the PG-TO247-4 tab?

Infineon validates standard silicone-based thermal pastes (e.g., Dow Corning TC-5122, Henkel Loctite ABLESTIK 84-60A) and 50–100 µm thickness phase-change pads (e.g., Laird TPCM 600) for this package. Mounting torque must not exceed 60 Ncm on M3/M3.5 screws to avoid die cracking or solder joint fatigue under thermal cycling.

IMZA75R090M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 83mOhm @ 7.4A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 542 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 113W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IMZA75R090M1HXKSA1 FAQ

1.How can I place an order for IMZA75R090M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA75R090M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA75R090M1HXKSA1 reliable?

The price and inventory of IMZA75R090M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R090M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA75R090M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R090M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA75R090M1HXKSA1?

IMZA75R090M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA75R090M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA75R090M1HXKSA1?

For technical support, including IMZA75R090M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R090M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA75R090M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA75R090M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R090M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA75R090M1HXKSA1?

All IMZA75R090M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R090M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA75R090M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA75R090M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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