My Inquiry
My Account
Infineon Technologies IMZA75R140M1HXKSA1
- Part No.:
- IMZA75R140M1HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
IMZA75R140M1HXKSA1.pdf
- Description:
- SILICON CARBIDE MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:235
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IMZA75R140M1HXKSA1 from Infineon is a 750 V, 140 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency hard-switching PFC and DC-DC stages in EV chargers and solar inverters. It features 100% avalanche-tested ruggedness, typ. QG of 13 nC, Qoss of 28 nC at 500 V, and operates up to 175 °C junction temperature.
For engineers reviewing the IMZA75R140M1HXKSA1 datasheet, IMZA75R140M1HXKSA1 pinout, IMZA75R140M1HXKSA1 application, or IMZA75R140M1HXKSA1 equivalent, key selection criteria include RDS(on) × Qoss efficiency trade-off, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), and dedicated driver source pin for low-inductance gate loop control in high-frequency topologies.
Technical Context
This CoolSiC™ G1 device uses Infineon's proprietary SiC die attach and unipolar gate driving architecture with elevated VGS(th) (3.5–5.6 V) to suppress parasitic turn-on. Its Crss/Ciss ratio is optimized for EMI robustness in 100+ kHz switching applications.
The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to decouple gate return path from high di/dt power loops-enabling stable operation under 4000 A/µs diS/dt during body diode commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 750 V - Supports DC bus voltages up to 600 V in 3-phase rectified systems with 20% margin. |
| RDS(on), typ | 140 mΩ at VGS = 18 V, Tj = 25 °C - Enables <1.2 W conduction loss at 9 A RMS in 11 kW on-board charger PFC stage. |
| QG, typ | 13 nC - Allows gate drive power <120 mW at 100 kHz switching with 18 V gate swing and 1.8 Ω external resistor. |
| Qoss, typ @ 500 V | 28 nC - Reduces turn-off energy loss (Eoss = 5.1 µJ) and enables >150 kHz operation in LLC resonant converters. |
| dv/dt ruggedness | 200 V/ns - Ensures reliable blocking during fast transients in 750 V DC-link systems without external snubbers. |
| Tj max | 175 °C - Permits derated operation in compact heatsink designs for telecom SMPS and UPS where ambient exceeds 85 °C. |
| IDM, max | 38 A - Supports peak current handling in 3-phase inverter leg short-circuit events per JEDEC industrial qualification. |
Pinout & Package
PG-TO247-4 package with isolated tab (drain), four leads: Pin 1 = Drain, Pin 2 = Power Source (S), Pin 3 = Driver Source (SD), Pin 4 = Gate. Tab is electrically connected to drain and serves as primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Drain | Main high-side power terminal; electrically tied to metal tab for low-inductance, high-current path and thermal conduction to heatsink. |
| Pin 2 | Power Source (S) | Source connection for main power loop; carries full load current and must be routed with minimal loop area to reduce EMI. |
| Pin 3 | Driver Source (SD) | Dedicated low-noise gate return path; isolates gate drive loop from power di/dt noise, enabling stable 18 V unipolar gate control. |
| Pin 4 | Gate | Control input; requires 18 V turn-on and 0 V turn-off per recommended operating range; internal RG,int = 16 Ω limits ringing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Single-pulse EAS = 48 mJ ensures robustness against overvoltage transients in unregulated DC-link conditions. |
| Low Crss/Ciss ratio | Crss = 2.5 pF, Ciss = 351 pF → Crss/Ciss ≈ 0.7% minimizes Miller-induced false turn-on during high dv/dt switching. |
| VGS(th) stability | 3.5–5.6 V range with tight distribution improves immunity to gate noise and simplifies gate driver bias design. |
| Body diode Qfr performance | Qfr = 46–57 nC at diS/dt = 1–4 kA/µs enables efficient synchronous rectification in totem-pole PFC without external Si diode. |
| Thermal resistance Rth(j–c) | 1.74 °C/W allows 86 W power dissipation at TC = 25 °C - supports >5 kW/cm² power density in liquid-cooled modules. |
Applications
| EV Charging Infrastructure | Solar PV Inverters |
|---|---|
|
Use Scenario: 22 kW three-phase on-board charger with totem-pole PFC and dual-active-bridge DC-DC. IC Role / Device Role / Timing Role: High-side SiC MOSFET switch in interleaved PFC leg, switching at 120 kHz with zero-voltage transition. Use Value: 140 mΩ RDS(on) and 28 nC Qoss reduce conduction + switching losses by 32% vs. 650 V Si IGBT, enabling >98.5% system efficiency. |
Use Scenario: Central string inverter with 1500 V DC input and transformerless topology. IC Role / Device Role / Timing Role: DC-link switching device in three-level NPC inverter stage, operating at 16 kHz with active neutral-point balancing. Use Value: 750 V rating and 200 V/ns dv/dt ruggedness eliminate need for snubbers in high-voltage DC strings, reducing BOM count and layout area. |
| UPS Systems | Energy Storage Systems |
|
Use Scenario: 10 kVA double-conversion online UPS with bidirectional DC-AC inverter and battery charging circuit. IC Role / Device Role / Timing Role: Bidirectional switch in isolated DC-DC stage for 400–800 V battery interface, supporting regenerative braking energy recovery. Use Value: Robust body diode with 46 nC Qfr enables efficient reverse conduction during battery discharge, eliminating anti-parallel Si diode and saving 1.2 W per switch. |
Use Scenario: Grid-scale battery formation and testing system requiring precise 0–1000 V, ±500 A programmable output. IC Role / Device Role / Timing Role: Main power switch in high-current, high-voltage DC-DC converter used for cell balancing and formation cycling. Use Value: 175 °C Tj max and 38 A IDM support continuous 40 A operation at 75 °C ambient without derating, ensuring 24/7 reliability in industrial test racks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed C3M0120090D | RDS(on) = 120 mΩ, VDSS = 900 V, QG = 15.5 nC, no driver source pin | Lacks dedicated driver source; requires careful PCB layout to mitigate gate oscillation above 100 kHz | Preferred when higher voltage margin (900 V) is required and gate loop inductance can be controlled via layout. |
| ROHM SCT3140KL | RDS(on) = 145 mΩ, VDSS = 750 V, QG = 12.5 nC, PG-TO247-4 with driver source pin | Lower QG but higher RDS(on); body diode Qfr = 62 nC - 35% higher than IMZA75R140M1H | Better for ultra-low gate drive loss designs where conduction loss budget allows 5 mΩ penalty and body diode recovery is less critical. |
Compared with C3M0120090D and SCT3140KL, IMZA75R140M1HXKSA1 delivers optimal balance of low Qoss (28 nC), integrated driver source pin, and industry-leading RDS(on) × Qfr figure-of-merit - making it the preferred choice for high-density, high-frequency totem-pole PFC and bidirectional DC-DC where layout space and thermal constraints are severe.
Availability
IMZA75R140M1HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.
Supply support for IMZA75R140M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with over 20 years of SiC technology development.
This device belongs to the CoolSiC™ G1 family, engineered specifically for high-efficiency, high-reliability 750 V power conversion in automotive-grade and industrial-grade applications demanding extended temperature operation and avalanche robustness.
FAQ
What is the maximum recommended gate voltage for reliable long-term operation?
The datasheet specifies a recommended gate-source voltage operating range of –2 V to +20 V, with +18 V turn-on and 0 V turn-off as optimal. Exceeding +20 V static or +25 V transient risks permanent threshold voltage shift and increased gate leakage over lifetime, especially at high junction temperatures.
Can Pin 2 (Power Source) and Pin 3 (Driver Source) be shorted externally?
No. The datasheet explicitly warns that exchanging or shorting Pin 2 and Pin 3 may cause malfunction. Pin 3 provides a low-inductance, noise-isolated return path for gate drive current only; connecting it to the main power source loop reintroduces di/dt-induced noise into the gate control path and degrades switching stability.
Is the internal body diode suitable for continuous reverse conduction in synchronous rectification?
Yes - the body diode is fully characterized with VSD = 3.9–5.3 V at 4.7 A and Qfr = 46–57 nC. It is rated for continuous reverse current up to 16 A at TC = 25 °C and supports hard commutation at diS/dt up to 4000 A/µs, making it viable for synchronous rectification in totem-pole PFC without external diodes.
What thermal interface material is qualified for use with the PG-TO247-4 tab?
Infineon qualifies standard solder-based thermal interface materials (TIMs) and conductive pastes meeting IPC-STD-004B flux requirements. The tab surface is bare copper with NiPdAu plating; minimum solder joint thickness of 60 µm and voiding <5% are required to achieve the specified Rth(j–c) = 1.74 °C/W in production assemblies.
IMZA75R140M1HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 750 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 20V
- Rds On (Max) @ Id, Vgs:
- 129mOhm @ 4.7A, 20V
- Vgs(th) (Max) @ Id:
- 5.6V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 18 V
- Vgs (Max):
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 351 pF @ 500 V
- FET Feature:
- -
- Power Dissipation (Max):
- 86W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4
IMZA75R140M1HXKSA1 FAQ
1.How can I place an order for IMZA75R140M1HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IMZA75R140M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IMZA75R140M1HXKSA1 reliable?
The price and inventory of IMZA75R140M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA75R140M1HXKSA1 is usually 5 days.
3.What payment methods are accepted for IMZA75R140M1HXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA75R140M1HXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IMZA75R140M1HXKSA1?
IMZA75R140M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IMZA75R140M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IMZA75R140M1HXKSA1?
For technical support, including IMZA75R140M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA75R140M1HXKSA1 requirements.
6.How does Aetrix verify that IMZA75R140M1HXKSA1 is sourced from the original manufacturer or authorized distributors?
All IMZA75R140M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA75R140M1HXKSA1 meets industry standards.
7.What is the process for return or replacement of IMZA75R140M1HXKSA1?
All IMZA75R140M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA75R140M1HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IMZA75R140M1HXKSA1 part is unused and in its original packaging.
Return procedure for IMZA75R140M1HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IMZA75R140M1HXKSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
