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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R012M2HXKSA1

Name: IMZC120R012M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R012M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZC120R012M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R012M2HXKSA1.pdf

Description:: IMZC120R012M2HXKSA1

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Product details

Overview

IMZC120R012M2HXKSA1 from Infineon is a 1200 V, 12 mΩ silicon carbide MOSFET in PG-TO247-4-U07 package with Kelvin source sensing, rated for 91 A DC at T_C = 100°C and short-circuit withstand time of 2 µs at V_GS(on) = 15 V. It features robust body diode operation, 4.2 V gate threshold voltage, and .XT interconnection technology for enhanced thermal performance in high-frequency power conversion.

For engineers reviewing the IMZC120R012M2HXKSA1 datasheet, IMZC120R012M2HXKSA1 pinout, IMZC120R012M2HXKSA1 application, or IMZC120R012M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate drive compatibility with Infineon's 1EDN/1EDS families, Kelvin-source layout requirements, and hard-commutation capability in bidirectional topologies.

Technical Context

This CoolSiC™ G2 device uses trench-gate SiC MOSFET architecture with integrated Kelvin source terminal to decouple gate-loop inductance from power loop, enabling precise gate control and minimizing dynamic R_DS(on) overshoot during fast switching. Its 1200 V blocking rating and 200°C overload junction temperature support operation in high-voltage DC-link applications up to 1000 V bus.

The MOSFET delivers low stored output charge (Q_OSS = 275 nC) and energy-related effective output capacitance (C_O(er) = 231 pF), enabling high-efficiency operation at 100–200 kHz in totem-pole PFC and three-level NPC inverters. Body diode forward recovery charge (Q_FR) is characterized at 0.2 µC (T_VJ = 25°C), supporting reliable unidirectional freewheeling without external anti-parallel Si diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 1000 V DC-link systems with 20% margin for transient overvoltage.
R_DS(on)	12 mΩ @ V_GS = 18 V, T_VJ = 25°C - Delivers <1.1 W conduction loss at 91 A, critical for high-power density designs.
I_DDC	91 A @ T_C = 100°C - Supports continuous operation in compact heatsinked modules without forced air.
t_SC	2 µs @ V_DD ≤ 800 V, V_GS(on) = 15 V - Allows robust short-circuit protection with standard gate driver response times.
V_GS(th)	4.2 V (typ.) - Reduces risk of parasitic turn-on while maintaining sufficient noise margin vs. 3.3 V logic interfaces.
Q_G	124 nC - Determines gate drive power requirement (~1.9 W at 100 kHz, 18 V swing) for selected driver ICs.
E_ON + E_OFF	942 µJ @ T_VJ = 25°C - Enables >98% efficiency in 10 kW totem-pole PFC stages operating at 150 kHz.

Pinout & Package

IMZC120R012M2HXKSA1 uses the PG-TO247-4-U07 package - a 4-pin variant of TO-247 with isolated Kelvin source terminal (Pin 3) for accurate gate drive referencing, separate from main source (Pin 2). This configuration reduces gate loop inductance by >50% versus standard 3-pin TO-247, suppressing Miller-induced oscillations in hard-switched converters.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side power terminal	Connected to DC-link positive or bridge-leg node; carries full load current and withstands full V_DSS.
2 – Source	Main low-side power return path	Carries full load current to ground/negative rail; must be routed with low-inductance copper pour.
3 – Kelvin Sense Contact	Gate reference point for source potential	Provides dedicated low-current path to gate driver return, eliminating source inductance impact on V_GS control.
4 – Gate	Control input for channel modulation	Receives gate drive signal; requires tight coupling to Pin 3 (Kelvin source) to maintain stable turn-on/turn-off behavior.

Key Features

Feature	Design Value
.XT interconnection technology	Reduces thermal resistance R_th(j-c) to 0.24 K/W, enabling 240 W power dissipation at T_C = 100°C without derating.
Kelvin source sensing (4-pin)	Eliminates source inductance effects on gate control, allowing stable 100+ V/ns dV/dt operation without external gate clamping.
Robust body diode	Rated for hard commutation with Q_FR = 0.2 µC and I_FRM = 31.7 A (T_VJ = 25°C), enabling body-diode-based ZVS in LLC resonant converters.
Short-circuit withstand time	2 µs at V_GS(on) = 15 V allows integration with Infineon's 1EDN751x drivers featuring programmable DESAT blanking and fault reporting.
Overload junction temperature	200°C (cumulative 100 h) supports temporary overload conditions in UPS and welding inverters without permanent degradation.

Applications

Solar String Inverter

EV DC Fast Charging

Use Scenario: High-efficiency 20–30 kW string inverters using three-level NPC or T-type topologies with 1000 V DC input.

IC Role / Device Role / Timing Role: Main switching device in high-side leg, operating at 150 kHz with synchronous body-diode freewheeling.

Use Value: 12 mΩ R_DS(on) and low E_ON+E_OFF reduce thermal stress on heatsinks, enabling passive cooling in outdoor-rated enclosures.

Use Scenario: 15–25 kW modular AC/DC rectifier stages in liquid-cooled EV charging cabinets.

IC Role / Device Role / Timing Role: Switching element in interleaved totem-pole PFC front-end, handling 91 A RMS current per phase.

Use Value: Kelvin-source layout ensures stable gate control under high di/dt (≥500 A/µs), preventing false turn-on during phase current reversal.

Industrial Online UPS

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: 30–50 kVA double-conversion UPS with 400 V AC output and 800 V DC-link, requiring high reliability and overload tolerance.

IC Role / Device Role / Timing Role: Inverter leg switch in three-phase IGBT/SiC hybrid design, operating in 50/60 Hz fundamental plus 2–5 kHz PWM.

Use Value: 200°C overload capability enables 150% rated load for 10 minutes without shutdown, meeting UL 1778 hold-time requirements.

Use Scenario: 50–100 kW bi-directional DC/DC converter linking 800 V battery stack to 400 V grid interface in commercial ESS installations.

IC Role / Device Role / Timing Role: Primary switch in dual-active-bridge (DAB) topology, conducting bidirectional power with body-diode reverse recovery managed via zero-voltage switching.

Use Value: Low Q_FR (0.2 µC) and soft reverse recovery minimize switching losses during reverse conduction, improving round-trip efficiency to >98.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0015120K	R_DS(on) = 15 mΩ, same 1200 V rating, TO-247-4L package, no Kelvin sense - higher gate loop inductance.	Limited to lower dV/dt (<50 V/ns) and lower switching frequency (<80 kHz) due to lack of Kelvin source.	Preferred where cost sensitivity outweighs need for ultra-fast switching or high-reliability gate control.
STW48N120K5	R_DS(on) = 14.5 mΩ, 1200 V, TO-247-4 package with Kelvin source, but higher Q_G (145 nC) and longer t_SC (3 µs).	Requires stronger gate driver (≥4 A peak) and longer DESAT blanking time, limiting use in compact multi-phase PFC.	Selected when extended short-circuit immunity is prioritized over minimal gate drive loss.

Compared with C3M0015120K and STW48N120K5, IMZC120R012M2HXKSA1 offers the lowest R_DS(on), shortest t_SC, and optimized .XT thermal interface - making it optimal for space-constrained, high-frequency, high-reliability industrial power converters where gate control fidelity and thermal headroom are critical.

Availability

IMZC120R012M2HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast charging stations, and industrial online UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IMZC120R012M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to the CoolSiC™ G2 family - engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems demanding 1200 V blocking, sub-15 mΩ on-resistance, and robust operation beyond 175°C junction temperature.

FAQ

What gate driver is recommended for IMZC120R012M2HXKSA1?

Infineon recommends the 1EDN7512x or 1EDS70xx families - single-channel isolated gate drivers with 4 A peak output, DESAT protection, and active Miller clamp. These drivers support the required ±5 V to 0 V turn-off range and provide dedicated Kelvin source return paths compatible with the 4-pin layout.

Can the Kelvin source and main source pins be tied together?

No - the Kelvin source (Pin 3) and main source (Pin 2) are electrically isolated within the package and serve distinct functions. Connecting them defeats the purpose of Kelvin sensing, reintroduces source inductance into the gate loop, and risks unstable switching or destructive oscillation during high di/dt events.

Is IMZC120R012M2HXKSA1 qualified for automotive applications?

No - this part is qualified per JEDEC JESD47/JESD22 for industrial applications only. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond 175°C junction, and is not approved for use in vehicle powertrain or ADAS systems.

What is the maximum allowable gate voltage during transient conditions?

The absolute maximum transient gate-source voltage is -10 V to +25 V for pulse widths ≤ 0.5 µs (duty cycle < 1%). For static operation, the limit is -7 V to +23 V. Exceeding these values risks irreversible gate oxide damage, especially at elevated junction temperatures.

IMZC120R012M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 129A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 57A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 17.8mA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 4050 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 480W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R012M2HXKSA1 FAQ

1.How can I place an order for IMZC120R012M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R012M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R012M2HXKSA1 reliable?

The price and inventory of IMZC120R012M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R012M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R012M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R012M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R012M2HXKSA1?

IMZC120R012M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R012M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R012M2HXKSA1?

For technical support, including IMZC120R012M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R012M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R012M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R012M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R012M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R012M2HXKSA1?

All IMZC120R012M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R012M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R012M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R012M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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