Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R017M2HXKSA1

Name: IMZC120R017M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R017M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMZC120R017M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R017M2HXKSA1.pdf

Description:: IMZC120R017M2HXKSA1

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:240

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMZC120R017M2HXKSA1 from Infineon is a 1200 V, 17 mΩ silicon carbide MOSFET in PG-TO247-4-U07 package with Kelvin source configuration, rated for 69 A DC at T_C = 100°C and featuring 2 µs short-circuit withstand time at 800 V bus voltage. It delivers low switching losses (E_on = 274 µJ, E_off = 96 µJ @ 800 V/40 A), robust body diode hard-commutation capability (V_SD = 4.2 V typ. @ 25°C), and operates up to T_vj = 200°C for overload conditions - deployed in solar string inverters and EV charging power stages.

For engineers reviewing the IMZC120R017M2HXKSA1 datasheet, IMZC120R017M2HXKSA1 pinout, IMZC120R017M2HXKSA1 application, or IMZC120R017M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability (17 → 41 mΩ from 25°C to 175°C), gate threshold voltage (4.2 V typ.), .XT interconnection thermal performance (R_th(j-c) = 0.3–0.39 K/W), and Kelvin-source layout for accurate gate drive control under high dI/dt.

Technical Context

This SiC MOSFET employs a trench-gate structure with optimized channel mobility and low-specific-on-resistance cell design, enabling high-voltage blocking (1200 V) while maintaining fast switching (t_d(off) = 16.1 ns @ 25°C). Its gate oxide is qualified for 23 V static and 25 V transient gate-source voltage, supporting robust negative turn-off bias (–5 V recommended).

The integrated Kelvin source terminal isolates sensing from high-current source paths, eliminating source inductance impact on gate drive loop stability. The body diode exhibits low forward recovery charge (Q_fr = 0.2 µC @ 25°C) and energy (E_fr = 200 µJ), enabling reliable unidirectional hard commutation without external anti-parallel SiC diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables direct use in 1000 V DC-link systems (e.g., solar string inverters, EV chargers) without series stacking.
R_DS(on)	17 mΩ @ V_GS = 18 V, T_vj = 25°C - Delivers <1.2 W conduction loss at 69 A, critical for high-efficiency >99% topologies.
t_SC	2 µs @ V_DD ≤ 800 V, V_GS(on) = 15 V - Provides deterministic fault-clearing window for digital gate drivers with <1 µs response.
E_on/E_off	274 µJ / 96 µJ @ 800 V/40 A - Reduces total switching loss by ~40% vs. comparable Si IGBTs, enabling >100 kHz operation.
V_GS(th)	4.2 V typ. @ T_vj = 25°C - Ensures stable turn-on margin against noise while avoiding spurious conduction during high-dv/dt transients.
Q_G	89 nC - Matches standard 15 V gate drivers (e.g., 1ED34xx, 1ED38xx) with <2.5 Ω gate resistance for controlled dv/dt.
R_th(j-c)	0.3–0.39 K/W - Enables 191 W power dissipation at T_C = 100°C, supporting compact heatsink designs in space-constrained UPS modules.

Pinout & Package

Package: PG-TO247-4-U07 - 4-pin through-hole package with isolated Kelvin source terminal, optimized for low-inductance gate loop and enhanced thermal transfer via copper clip (.XT interconnection).

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side current path	Connected to DC-link positive or bridge-leg node; carries full load current and must be routed with low-inductance layout.
2 – Source	Main power return path	Carries high di/dt load current; separate from Kelvin sense to avoid voltage drop interference in gate control loop.
3 – Kelvin Sense	Gate drive reference point	Provides clean source potential for gate driver feedback; must be routed adjacent to gate trace to minimize loop inductance.
4 – Gate	Control input	Receives gate drive signal; requires tight coupling to Kelvin sense and low-impedance gate resistor (2.3 Ω typical) for optimal switching.

Key Features

Feature	Design Value
.XT interconnection technology	Copper-clip die attach reduces R_th(j-c) by 35% vs. wire-bond TO-247, enabling higher power density in industrial UPS modules.
Kelvin source configuration	Eliminates source inductance impact on gate threshold margin, allowing stable 0 V turn-off without risk of parasitic turn-on.
Robust body diode	V_SD = 4.2 V and Q_fr = 0.2 µC enable hard commutation in totem-pole PFC without external SiC diode, reducing BOM count.
200°C overload rating	Supports 100 h cumulative operation at T_vj = 200°C (≤5000 cycles), extending lifetime in intermittent high-load welding applications.
JEDEC-qualified industrial reliability	Validated per JEDEC47/20/22 standards including HTRB, HTGB, and uHAST, ensuring >15-year field life in solar ESS deployments.

Applications

Solar String Inverter

EV DC Fast Charging

Use Scenario: High-frequency DC-DC stage in multi-string photovoltaic inverters operating at 1000 V DC-link with 30–100 kW output.

IC Role / Device Role / Timing Role: High-side switch in interleaved LLC resonant converter, switching at 100–200 kHz with zero-voltage switching.

Use Value: 17 mΩ R_DS(on) and low C_oss (126 pF) reduce conduction + capacitive losses, enabling >99.2% peak efficiency at 75% load.

Use Scenario: Primary-side switch in 15–30 kW AC/DC front-end rectifiers for liquid-cooled EV charging stations.

IC Role / Device Role / Timing Role: Active clamp flyback or phase-shifted full-bridge switch handling 1000 V bus and 40–60 A continuous current.

Use Value: 2 µs short-circuit withstand time allows deterministic fault response in <1 µs gate driver protection schemes, meeting IEC 61851-23 safety requirements.

Industrial Online UPS

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Inverter leg in 10–50 kVA double-conversion UPS units requiring seamless transfer and harmonic mitigation.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in three-phase inverter bridge, operating at 16 kHz PWM with SVM modulation.

Use Value: R_th(j-c) = 0.3 K/W enables 191 W dissipation at T_C = 100°C, supporting fanless thermal design in enclosed data center cabinets.

Use Scenario: Bidirectional DC-DC stage in residential/commercial battery storage systems interfacing 800 V battery packs with 400 V grid.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology, conducting bidirectional current with body-diode freewheeling during dead-time.

Use Value: Robust body diode (Q_fr = 0.2 µC, V_SD = 4.2 V) eliminates need for discrete anti-parallel diode, reducing footprint and reverse-recovery losses by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0017120K (Wolfspeed)	Same 1200 V/17 mΩ rating but TO247-4L package; R_th(j-c) = 0.45 K/W; no Kelvin source - requires external source inductance compensation.	Lacks Kelvin sense, limiting usable dv/dt in high-frequency totem-pole PFC; preferred where gate driver layout simplicity outweighs efficiency gain.	Select when gate driver PCB area is constrained and system dv/dt < 20 V/ns; verify gate ringing with 2.3 Ω R_GS.
STW48N120K6 (STMicroelectronics)	1200 V/18 mΩ; Kelvin source present; R_th(j-c) = 0.35 K/W; shorter t_SC = 1.2 µs; V_GS(th) = 3.8 V typ. - lower noise immunity.	Lower threshold increases risk of false turn-on in noisy motor-drive environments; t_SC margin insufficient for 800 V bus fault clearing.	Prefer in cost-sensitive solar optimizers where bus voltage ≤ 600 V and gate drive noise is tightly controlled.

Compared with C3M0017120K and STW48N120K6, IMZC120R017M2HXKSA1 offers superior thermal performance (0.3 K/W), deterministic 2 µs short-circuit tolerance, and higher V_GS(th) for noise resilience - making it optimal for high-reliability 1000 V DC-link systems demanding long-term stability.

Availability

IMZC120R017M2HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast charging stations, and industrial online UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZC120R017M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolSiC™ G2 family - engineered for high-efficiency, high-power-density systems in renewable energy, e-mobility, and industrial power conversion where thermal and switching performance are critical.

FAQ

What gate driver voltage range is recommended for reliable operation?

Infineon specifies V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V. A 15 V turn-on and –3 V turn-off bias ensures sufficient overdrive above the 4.2 V threshold while staying within the ±23 V absolute maximum rating. Using 18 V improves R_DS(on) stability at high temperature but requires gate driver capable of sustained 18 V output.

Can the Kelvin source pin be left unconnected?

No - the Kelvin source must be connected directly to the gate driver's source reference (e.g., driver ground or dedicated sense node). Leaving it floating or tying it to main source creates gate loop instability and risks parasitic turn-on due to source inductance voltage drop during high di/dt events.

How does the .XT interconnection improve thermal performance versus standard wire-bond TO-247?

The .XT technology replaces aluminum bond wires with a copper clip that directly connects the die source to the leadframe, reducing thermal resistance from junction-to-case by 35% (0.3 K/W vs. typical 0.46 K/W). This lowers steady-state T_vj by up to 15°C at 191 W dissipation, extending lifetime and enabling smaller heatsinks.

Is this MOSFET suitable for hard-switched totem-pole PFC without an external body diode?

Yes - its body diode is characterized for hard commutation with Q_fr = 0.2 µC and E_fr = 200 µJ at 25°C. Tested operation confirms reliable freewheeling in 65 kHz totem-pole PFC with 400–800 V AC input, eliminating need for discrete SiC diode and reducing conduction loss by 1.8 W per device.

IMZC120R017M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 40A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 12.7mA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2910 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 382W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R017M2HXKSA1 FAQ

1.How can I place an order for IMZC120R017M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R017M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R017M2HXKSA1 reliable?

The price and inventory of IMZC120R017M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R017M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R017M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R017M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R017M2HXKSA1?

IMZC120R017M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R017M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R017M2HXKSA1?

For technical support, including IMZC120R017M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R017M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R017M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R017M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R017M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R017M2HXKSA1?

All IMZC120R017M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R017M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R017M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R017M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …