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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R022M2HXKSA1

Name: IMZC120R022M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R022M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZC120R022M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R022M2HXKSA1.pdf

Description:: IMZC120R022M2HXKSA1

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Product details

Overview

IMZC120R022M2HXKSA1 from Infineon is a 1200 V, 22 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4-U07 package with Kelvin source configuration, rated for 57 A DC current at T_C = 100°C and featuring 2 µs short-circuit withstand time, 4.2 V gate threshold voltage, and .XT interconnection technology for enhanced thermal performance. It serves as a high-efficiency switching device in high-voltage DC-DC converters and three-phase inverters operating up to 200°C junction temperature.

For engineers reviewing the IMZC120R022M2HXKSA1 datasheet, IMZC120R022M2HXKSA1 pinout, IMZC120R022M2HXKSA1 application, or IMZC120R022M2HXKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, robustness against parasitic turn-on, body diode hard-commutation capability, and compatibility with Infineon's dedicated SiC gate drivers such as 1ED34xx series.

Technical Context

This CoolSiC™ G2 MOSFET employs trench-gate SiC technology with a Kelvin source terminal to decouple power and sensing paths, minimizing gate loop inductance and enabling precise gate control under high dV/dt conditions up to 200 kV/µs. Its 4.2 V V_GS(th) provides clear noise margin against false triggering while supporting reliable 0 V turn-off operation.

The device integrates a robust intrinsic body diode rated for 171 A peak reverse current and 5.5 V forward voltage at 25°C, enabling unidirectional freewheeling without external anti-parallel diodes in topologies like totem-pole PFC. Thermal resistance R_th(j-c) is specified at 0.35–0.46 K/W, enabled by .XT interconnection for low-junction-to-case impedance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports DC bus voltages up to 1000 V in industrial UPS and solar string inverters with 20% safety margin.
R_DS(on)	22 mΩ @ V_GS = 18 V, T_vj = 25°C - enables low conduction loss in high-current 15–30 kW power stages.
I_D,DC	57 A @ T_C = 100°C - defines continuous output capability in forced-air-cooled motor drives and ESS bidirectional converters.
t_SC	2 µs @ V_DD ≤ 800 V, V_GS(on) = 15 V - allows fast desaturation detection and protection circuit response in fault conditions.
V_GS(th)	4.2 V (typ.) - ensures stable turn-on with immunity to gate noise in high-frequency (>100 kHz) switching applications.
E_on + E_off	270 µJ typ. @ 800 V, 32 A, 25°C - reduces total switching loss by >40% vs. comparable Si IGBTs, enabling higher frequency operation.
R_th(j-c)	0.35–0.46 K/W - delivers superior heat extraction to heatsink, critical for compact, high-power-density designs.

Pinout & Package

Package: PG-TO247-4-U07 - 4-pin through-hole package with isolated Kelvin source terminal for accurate gate drive referencing and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side power terminal	Connected to high-voltage DC bus; carries full load current and must be routed with low-inductance layout.
2 – Source	Main low-side power return path	Carries full output current; requires separate heavy copper pour distinct from Kelvin sense path.
3 – Kelvin Sense Contact	Gate drive reference point	Provides clean, low-inductance return for gate driver to eliminate source inductance-induced oscillation during switching.
4 – Gate	Control input	Receives gate drive signal; must be driven with low-impedance path (<2.3 Ω recommended) to achieve specified 6.1 ns t_d(on).

Key Features

Feature	Design Value
.XT interconnection technology	Reduces thermal resistance by ~15% vs. standard TO-247, enabling 10–15°C lower junction temperature at same power dissipation.
Kelvin source configuration	Eliminates source inductance impact on gate control, allowing stable 100+ kHz switching with minimal overshoot or ringing.
Robust body diode	Rated for 171 A peak reverse current and 5.5 V V_SD at 25°C, enabling reliable hard commutation in totem-pole PFC without external diode.
Short-circuit withstand time	2 µs at 800 V bus voltage - supports deterministic fault handling with standard DESAT detection circuits.
Overload operation to 200°C	Validated for cumulative 100 h at T_vj = 200°C (≤5000 cycles), extending safe operating area during transient overload events.

Applications

Solar String Inverter

Industrial UPS

Use Scenario: High-efficiency DC-AC conversion in multi-string photovoltaic systems with MPPT tracking and transformerless topology.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter bridge, operating at 30–100 kHz with synchronous rectification via body diode.

Use Value: 22 mΩ R_DS(on) and low E_oss (42 µJ) reduce conduction and switching losses, enabling >99% peak efficiency at 15 kW per string.

Use Scenario: Bidirectional power flow in online double-conversion UPS systems with battery charging and grid backup modes.

IC Role / Device Role / Timing Role: High-side switch in isolated DC-DC stage and inverter leg, handling 400–800 V DC link with fast 13.6 ns t_d(off).

Use Value: 2 µs short-circuit rating and 200°C overload capability ensure system reliability during grid faults and battery surge events.

EV DC Fast Charging

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Primary switching element in 10–30 kW AC-DC front-end rectifiers and DC-DC isolation stages of CCS/GB/T chargers.

IC Role / Device Role / Timing Role: Active switch in interleaved totem-pole PFC and phase-shifted full-bridge, leveraging body diode for zero-voltage switching.

Use Value: Robust body diode with 0.19 µC Q_fr minimizes reverse recovery loss, reducing thermal stress during 100+ kHz soft-switching operation.

Use Scenario: Power conversion between battery stack (600–1000 V) and grid or microgrid in residential/commercial ESS units.

IC Role / Device Role / Timing Role: High-voltage switch in dual-active-bridge (DAB) or three-level NPC topology, requiring precise gate control and low R_DS(on) stability.

Use Value: Stable R_DS(on) (44–56 mΩ @ 150–175°C) ensures predictable conduction loss across wide ambient temperature range (-40°C to +70°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0022120K	1200 V, 22 mΩ, TO-247-4L package; higher C_iss (2600 pF vs. 2330 pF) and no Kelvin source pin - uses source pin for both power and gate reference.	Lacks Kelvin sense, limiting usable switching frequency in high-dV/dt environments; requires tighter gate loop layout.	Select when cost sensitivity outweighs need for ultra-low gate oscillation; verify gate driver loop inductance < 5 nH.
STW48N120K6	1200 V, 24 mΩ, TO-247-4L; lower short-circuit withstand time (1.2 µs vs. 2 µs); V_GS(th) = 3.5 V (min), narrower noise margin.	Less tolerant of gate noise in noisy industrial EMI environments; requires active Miller clamp for reliable 0 V turn-off.	Prefer where space constraints favor ST's smaller die footprint; confirm protection timing budget accommodates reduced t_SC.

Compared with C3M0022120K and STW48N120K6, IMZC120R022M2HXKSA1 offers superior thermal performance (0.35 K/W R_th(j-c)), guaranteed Kelvin source isolation, and longer short-circuit tolerance - making it optimal for high-reliability, high-frequency, high-power-density applications demanding design margin.

Availability

IMZC120R022M2HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and EV DC fast charging stations requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IMZC120R022M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to the CoolSiC™ G2 family, designed specifically for high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial automation systems operating at 1200 V class.

FAQ

What gate driver is recommended for IMZC120R022M2HXKSA1?

Infineon recommends its 1ED34xx family of isolated SiC gate drivers (e.g., 1ED3461MC12M), which provide ±9 A peak output current, programmable dead time, and integrated active Miller clamp. These drivers match the device's 2.3 Ω recommended gate resistor value and support 0 V turn-off without risk of parasitic turn-on due to the Kelvin source architecture.

Can the Kelvin source pin be left unconnected?

No - the Kelvin source pin (Pin 3) must be connected directly to the gate driver's source reference node, independent of the main source (Pin 2). Leaving it unconnected degrades gate control accuracy, increases switching losses, and risks oscillation or false turn-on due to source inductance coupling into the gate loop.

Is IMZC120R022M2HXKSA1 qualified for automotive use?

No - this part is qualified for industrial applications per JEDEC47/20/22 standards only. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature range validation beyond -55°C to +175°C junction. For automotive traction or OBC applications, Infineon's CoolSiC™ Automotive series (e.g., IMZA120R045M1H) should be used instead.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode has V_SD = 5.5 V at 32 A and 25°C, higher than typical 1.5–2.5 V for discrete SiC Schottky diodes, but offers inherent co-location and thermal coupling with the MOSFET die. Its 0.19 µC Q_fr and 26.9 A I_frm enable robust hard commutation in totem-pole PFC, eliminating external diode count and layout complexity at the cost of slightly higher conduction loss during freewheeling.

IMZC120R022M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 32A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 10.1mA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 329W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R022M2HXKSA1 FAQ

1.How can I place an order for IMZC120R022M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R022M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R022M2HXKSA1 reliable?

The price and inventory of IMZC120R022M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R022M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R022M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R022M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R022M2HXKSA1?

IMZC120R022M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R022M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R022M2HXKSA1?

For technical support, including IMZC120R022M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R022M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R022M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R022M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R022M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R022M2HXKSA1?

All IMZC120R022M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R022M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R022M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R022M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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