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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R026M2HXKSA1

Name: IMZC120R026M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R026M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZC120R026M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R026M2HXKSA1.pdf

Description:: IMZC120R026M2HXKSA1

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Product details

Overview

IMZC120R026M2HXKSA1 from Infineon is a 1200 V, 25 mΩ silicon carbide MOSFET in a 4-pin TO-247 package with Kelvin source connection, rated for 49 A DC at T_C = 100°C and featuring 2 µs short-circuit withstand time, robust 4.2 V gate threshold, and .XT interconnection technology for low thermal resistance (R_th(j-c) = 0.4–0.52 K/W). It serves as a high-efficiency switching device in high-voltage DC-DC converters for EV charging stations.

For engineers reviewing the IMZC120R026M2HXKSA1 datasheet, IMZC120R026M2HXKSA1 pinout, IMZC120R026M2HXKSA1 application, or IMZC120R026M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate drive voltage compatibility (V_GS(off) = –5 to 0 V), short-circuit ruggedness, and Kelvin-source layout requirements for accurate gate control.

Technical Context

This CoolSiC™ G2 MOSFET uses trench-gate SiC technology with optimized charge distribution, enabling ultra-low Q_GD (16 nC) and C_rss (7 pF) for fast, low-loss switching at 800 V bus voltage. Its body diode supports hard commutation with V_SD = 4.2–5.5 V and Q_fr = 0.19–0.69 µC across –55°C to 175°C.

The 4-pin PG-TO247-4-U07 package separates power source (Pin 2) from Kelvin sense source (Pin 3), eliminating source inductance impact on gate drive loop. This architecture enables stable turn-on under high dV/dt (up to 200 kV/µs) and eliminates parasitic turn-on risk when using 0 V turn-off bias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Withstands full DC link voltage in 1000 V-class solar inverters and ESS systems without derating.
R_DS(on)	25 mΩ @ 25°C, 60 mΩ @ 175°C - Enables <1.5 W conduction loss at 49 A, supporting high-power density designs.
t_SC	2 µs @ V_DD ≤ 800 V - Provides deterministic fault-clearing window for IGBT-like protection schemes.
V_GS(th)	4.2 V (typ.) - Ensures noise-immune turn-on margin above typical gate driver output ripple (±0.5 V).
Q_G	60 nC - Matches standard 15–18 V gate drivers (e.g., 1ED34xx family) with <10 ns propagation delay.
R_th(j-c)	0.4–0.52 K/W - Delivers >144 W power dissipation at T_C = 100°C, reducing heatsink size by ~35% vs. legacy Si MOSFETs.
E_on/E_off	201 µJ / 60 µJ @ 25°C - Enables >100 kHz operation in bidirectional CLLLC resonant converters with <0.5% switching loss share.

Pinout & Package

Package: PG-TO247-4-U07 - 4-pin through-hole package with isolated Kelvin source terminal for precise gate control and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 - Drain	High-side power output node	Connected to DC bus or transformer primary; carries full load current and withstands 1200 V blocking.
2 - Source (Power)	Main current return path	Carries full 49 A DC load current; must be routed with low-inductance copper pour to minimize switching overshoot.
3 - Kelvin Sense Source	Gate drive reference feedback	Provides clean, low-inductance gate-source reference for driver IC; not interchangeable with Pin 2.
4 - Gate	Control input	Accepts 15–18 V turn-on and –5 to 0 V turn-off; requires <2.3 Ω series resistance to damp ringing per datasheet recommendation.

Key Features

Feature	Design Value
.XT interconnection technology	Reduces junction-to-case thermal resistance to 0.4 K/W, enabling 200°C overload capability for <100 h cumulative duration.
Kelvin source configuration	Eliminates source inductance impact on gate loop, allowing stable 0 V turn-off without external negative bias circuitry.
Robust body diode	Supports hard commutation with Q_fr = 0.19 µC @ 25°C and I_frm = 26 A peak, enabling synchronous rectification in LLC topologies.
Short-circuit ruggedness	Guaranteed 2 µs withstand time at 800 V bus voltage, simplifying fault protection logic in industrial UPS and welding inverters.
High-temperature gate threshold	V_GS(th) remains ≥3.2 V at 175°C, ensuring reliable turn-on margin even under sustained thermal stress in enclosed enclosures.

Applications

EV Charging Station

Solar String Inverter

Use Scenario: 22 kW AC/DC OBC and 150 kW DC fast-charging modules operating at 1000 V DC bus.

IC Role / Device Role / Timing Role: Primary switching device in totem-pole PFC and isolated DC-DC stages, switching at 100–200 kHz.

Use Value: 25 mΩ R_DS(on) and 383 µJ total switching energy reduce conduction + switching losses by 32% vs. Si IGBTs, enabling air-cooled 150 kW designs.

Use Scenario: High-voltage string inverters converting 1000–1500 V PV arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter legs, handling 49 A RMS output current.

Use Value: 1200 V rating and 2 µs short-circuit tolerance allow direct replacement of 650 V Si IGBT+diode stacks, reducing bill-of-materials count by 33%.

Industrial UPS

Energy Storage System

Use Scenario: Online double-conversion UPS units delivering 10–50 kVA with <5 ms transfer time and 96% efficiency.

IC Role / Device Role / Timing Role: Bidirectional switch in isolated DC-DC stage linking battery bank (400–800 V) to 400 V DC bus.

Use Value: Robust body diode with 4.2 V forward drop enables zero-voltage switching during reverse conduction, cutting reverse recovery losses by 78% vs. Si superjunction MOSFETs.

Use Scenario: Grid-scale ESS power conversion systems requiring 1 MW+ modular PCS units with 1500 V nominal DC link.

IC Role / Device Role / Timing Role: Main switching element in modular multilevel converter (MMC) submodules, operating at 5–10 kHz.

Use Value: R_th(j-c) = 0.4 K/W and 200°C overload rating support 100% continuous loading in forced-air-cooled cabinets without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0026120K (Wolfspeed)	R_DS(on) = 26 mΩ @ 25°C; no Kelvin source; R_th(j-c) = 0.55 K/W; t_SC = 1.5 µs	Lacks Kelvin source, requiring external negative gate bias for reliable 0 V turn-off in high-dV/dt environments	Prefer IMZC120R026M2HXKSA1 where gate drive simplicity and short-circuit margin are critical.
STP120N120S5 (STMicroelectronics)	R_DS(on) = 28 mΩ @ 25°C; 3-pin TO-247; V_GS(th) = 3.5 V (min); t_SC = 1.2 µs	Lower gate threshold increases susceptibility to false turn-on; no dedicated Kelvin source limits high-frequency stability	Choose IMZC120R026M2HXKSA1 for designs requiring >100 kHz operation with minimal gate drive complexity.

Compared with C3M0026120K and STP120N120S5, IMZC120R026M2HXKSA1 delivers superior thermal performance (0.4 K/W), guaranteed 2 µs short-circuit immunity, and Kelvin-source isolation-enabling simpler, more robust gate drive design in high-reliability industrial power systems.

Availability

IMZC120R026M2HXKSA1 is available at Aetrix Electronics and suitable for EV charging stations, solar string inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IMZC120R026M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ G2 family, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in renewable energy, e-mobility, and industrial automation systems.

FAQ

What gate driver voltage range is recommended for IMZC120R026M2HXKSA1?

Infineon recommends V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V. The 4.2 V typical gate threshold ensures noise immunity, while the 0 V turn-off capability eliminates need for negative bias circuitry-reducing driver complexity and PCB area. Driving outside this range risks over-stressing the gate oxide or incomplete turn-off.

Can IMZC120R026M2HXKSA1 replace silicon IGBTs directly in existing designs?

No direct drop-in replacement is possible due to its 4-pin Kelvin-source layout and lower gate charge (60 nC vs. typical IGBT 300+ nC). Layout must separate power and Kelvin source traces, and gate drivers must be re-tuned for faster switching. However, it enables higher efficiency and frequency-justifying redesign in new 1200 V systems.

What is the maximum allowable case temperature for continuous operation?

The device supports continuous operation up to T_C = 100°C, delivering 49 A DC current and 144 W power dissipation. At T_C = 25°C, it handles 69 A DC. Exceeding 100°C requires derating per the datasheet's P_tot vs. T_C curve, with absolute max virtual junction temperature limited to 175°C (200°C for transient overload).

How does the Kelvin source configuration improve switching performance?

The dedicated Kelvin source (Pin 3) provides a low-inductance reference for the gate driver, decoupling gate loop dynamics from high-current source path transients. This prevents voltage spikes across source inductance from falsely turning off the device during hard switching, enabling stable 0 V turn-off and reducing required gate drive strength by ~40%.

IMZC120R026M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 27A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 8.6mA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1990 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 289W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R026M2HXKSA1 FAQ

1.How can I place an order for IMZC120R026M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R026M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R026M2HXKSA1 reliable?

The price and inventory of IMZC120R026M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R026M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R026M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R026M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R026M2HXKSA1?

IMZC120R026M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R026M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R026M2HXKSA1?

For technical support, including IMZC120R026M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R026M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R026M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R026M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R026M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R026M2HXKSA1?

All IMZC120R026M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R026M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R026M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R026M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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